1N4148 / 1N4448
Document number: DS12019 Rev. 7 - 2 1 of 2
www.diodes.com March 2008
© Diodes Incorporated
1N4148 / 1N4448
FAST SWITCHING DIODE
Features
• Fast Switching Speed
• General Purpose Rectification
• Silicon Epitaxial Planar Construction
• Lead Free Finish, RoHS Compliant (Note 2)
Mechanical Data
• Case: DO-35
• Case Material: Glass
• Moisture Sensitivity: Level 1 per J-STD-020D
• Leads: Solderable per MIL-STD-202, Method 208
• Terminals: Finish ⎯ Sn96.5Ag3.5. Solderable per MIL-STD-
202, Method 208
• Polarity: Cathode Band
• Marking: Type Number
• Ordering Information: See Page 2
• Weight: 0.13 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol 1N4148 1N4448 Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current (Note 1) IFM 300 500 mA
Average Rectified Output Current (Note 1) IO 150 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
@ t = 1.0μs IFSM 1.0
2.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
Derate Above 25°C PD 500
1.68 mW
mW/°C
Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 300 °C/W
Operating and Storage Temperature Range TJ , TSTG -65 to +175 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage 1N4148
1N4448
1N4448
VFM ⎯
0.62
⎯
1.0
0.72
1.0 V IF = 10mA
IF = 5.0mA
IF = 100mA
Maximum Peak Reverse Current IRM ⎯
5.0
50
30
25
μA
μA
μA
nA
VR = 75V
VR = 70V, TJ = 150°C
VR = 20V, TJ = 150°C
VR = 20V
Total Capacitance CT ⎯ 4.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr ⎯ 4.0 ns IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100Ω
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and high temperature solder exemptions applied where applicable,
see EU Directive Annex Notes 5 and 7.
1N4148 / 1N4448
1
10
100
1,000
10,000
0100
200
I , LEAKA
G
E
C
U
R
R
EN
T
(n A)
R
T , JUNCTION TEMPERATURE ( C)
Fig . 2 Leak age Curr ent v s. Junct ion Tem per at ur e
J
°
V = 20V
R
10
1.0
100
1,000
0.1
0.0100.4 0.8 1.2 1.6 2.0
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA)
F
V , INSTANTANEOUS FORW ARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
F
Ordering Information (Note 3)
1N4148 / 1N4448
Document number: DS12019 Rev. 7 - 2 2 of 2
www.diodes.com March 2008
© Diodes Incorporated
Part Number Case Packaging
1N4148-A DO-35 10K/Ammo Pack
1N4148-T DO-35 10K/Tape & Reel, 13-inch
1N4448-A DO-35 10K/Ammo Pack
1N4448-T DO-35 10K/Tape & Reel, 13-inch
Notes: 3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Package Outline Dimensions
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DO-35
Dim Min Max
A 25.40 ⎯
B ⎯ 4.00
C ⎯ 0.60
D ⎯ 2.00
All Dimensions in mm
