HEXFET® Power MOSFET
VDSS = -20V
RDS(on) = 0.60Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The
low profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
IRLML6302GPbF
07/23/08
Description
lGeneration V Technology
lUltra Low On-Resistance
lP-Channel MOSFET
lSOT-23 Footprint
lLow Profile (<1.1mm)
lAvailable in Tape and Reel
lFast Switching
lLead-Free
lHalogen-Free
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -0.78
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -0.62 A
IDM Pulsed Drain Current -4.9
PD
@TA = 25°C Power Dissipation 540 mW
Linear Derating Factor 4.3 mW/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient 230
Thermal Resistance
°C/W
Micro3TM
6
*
'
www.irf.com 1
PD - 96159
IRLML6302GPbF
www.irf.com 2
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient -4.9 mV/°C Reference to 25°C, ID = -1mA
0.60 VGS = -4.5V, ID = -0.61A
0.90 VGS = -2.7V, ID = -0.31A
VGS(th) Gate Threshold Voltage -0.70 -1.5 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 0.56 S VDS = -10V, ID = -0.31A
-1.0 VDS = -16V, VGS = 0V
-25 VDS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage -100 VGS = -12V
Gate-to-Source Reverse Leakage 100 VGS = 12V
QgTotal Gate Charge 2.4 3.6 ID = -0.61A
Qgs Gate-to-Source Charge 0.56 0.84 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge 1.0 1.5 VGS = -4.5V, See Fig. 6 and 9
td(on) Turn-On Delay Time 13 VDD = -10V
trRise Time 18 ID = -0.61A
td(off) Turn-Off Delay Time 22 RG = 6.2Ω
tfFall Time 22 RD = 16Ω, See Fig. 10
Ciss Input Capacitance 97 VGS = 0V
Coss Output Capacitance 53 pF VDS = -15V
Crss Reverse Transfer Capacitance 28 = 1.0MHz, See Fig. 5
Ω
µA
nA
IGSS
IDSS Drain-to-Source Leakage Current
RDS(ON) Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
Repetitive rating; pulse width
limited by max. junction temperature. ( See fig. 11 )
ISD ≤ -0.61A, di/dt ≤ 76A/µs, VDD≤V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -0.61A, VGS = 0V
trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = -0.61A
Qrr Reverse Recovery Charge ––– 26 39 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
A
S
D
G
-4.9
-0.54
ns
IRLML6302GPbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.01
0.1
1
10
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-1.5V
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
0.01
0.1
1
10
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 150°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
0.01
0.1
1
10
1.5 2.0 2.5 3.0 3.5 4.0 4.5
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
I = -0.61A
V = -4.5V
D
GS
IRLML6302GPbF
www.irf.com 4
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
20
40
60
80
100
120
140
160
180
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0.0 1.0 2.0 3.0 4.0
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -0.61A
V = -16V
FOR TEST CIRCUIT
SEE FIGURE 9
D
DS
0.01
0.1
1
10
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
0.1
1
10
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
T = 150°C
Single Pulse
A
-I , Drain Current (A)
-V , Drain-to-Source Voltage (V)
DS
D
A
J
100µs
1ms
10ms
IRLML6302GPbF
www.irf.com 5
+
-
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
Fig 9a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
Fig 9b. Gate Charge Test Circuit
-4.5V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-4.5V
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRLML6302GPbF
www.irf.com 6
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 13. For P-Channel HEXFETS
IRLML6302GPbF
www.irf.com 7
Micro3 / SOT-23 Package Marking
A YW LC
PART NUMBER
Y = YEAR
W = WEEK
LOT
CODE
HALOGEN FREE
INDICATOR
PART NUMBER CODE REFERENCE:
A = IRLML2402
B =IRLML2803
C = IRLML2402
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
Note: A line above the work week
(as shown here) indicates Lead-free
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
$ $
: ,)35(&('('%</$67',*,72)&$/(1'$5<($5
: ,)35(&('(' %<$/(77(5
<
<($5
<($5 <
&
:25.
:((.
$
:
%
'
;
=
<
:25.
:((. :
.
+
*
)
(
'
&
%
-
<
&
%
'
;
=
0.972
1.900
Recommended Footprint
0.802
0.950 2.742
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
e
E1
E
D
A
B
0.15 [0.006]
e1
12
3
MCBA
5
6
6
5
3X L
c
b
A1 3X
A
A2
ABC
M
0.20 [0.008]
0.10 [0.004] C
C
L2
H 4 L1
7
0.89 1.12
SYMBOL MAXMIN
A1
b
0.01 0.10
c
0.30 0.50
D
0.08 0.20
E
2.80 3.04
E1
2.10 2.64
e
1.20 1.40
A
0.95 BSC
L 0.40 0.60
08
MILLIMETERS
A2 0.88 1.02
e1 1.90 BSC
REF0.54L1
BSC0.25L2
BSC
REF
%6&
INCHES
80
%6&
0.0004
MIN MAX
DIMENSIONS
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
IRLML6302GPbF
www.irf.com 8
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2008
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
