TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP31A / TIP31C Rev. 1.1.0
November 2014
TIP31A / TIP31C
NPN Epitaxial Silicon Transistor
Features
Medium Power Linear Switching Applications
Complementary to TIP32 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditi ons an d s tres si ng the parts to the se lev el s i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP31A TIP31A TO-220 3L (Single Gauge) Bulk
TIP31C TIP31C TO-220 3L (Single Gauge) Bulk
TIP31CTU TIP31C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP31A 60 V
TIP31C 100
VCEO Collector-Emitter Voltage TIP31A 60 V
TIP31C 100
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 3 A
ICP Collector Current (Pulse) 5 A
IBBase Current 1 A
TJJunction Temperat ure 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP31A / TIP31C Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Valu es are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 40
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1) TIP31A IC = 30 mA, IB = 0 60 V
TIP31C 100
ICEO Collector Cut-Off Current TIP31A VCE = 30 V, IB = 00.3
mA
TIP31C VCE = 60 V, IB = 00.3
ICES Collector Cut-Off Current TIP31A VCE = 60 V, VEB = 0 200 μA
TIP31C VCE = 100 V, VEB = 0 200
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 1 mA
hFE DC Current Gain(1) VCE = 4 V, IC = 1 A 25
VCE = 4 V, IC = 3 A 10 50
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 3 A, IB = 375 mA 1.2 V
VBE(on) Base-Emitter On Voltage(1) VCE = 4 V, IC = 3 A 1.8 V
fT Current Gain Bandwidth Product VCE = 10 V, IC = 500 mA,
f = 1 MHz 3.0 MHz
TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP31A / TIP31C Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
1 10 100 1000 10000
1
10
100
1000 VCE = 4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
10 100
0.1
1
10
100μs
TIP31C VCEO MAX.
TIP31B VCEO MAX.
TIP31A VCEO MA X.
TIP31 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
45
50
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP31A / TIP31C — NPN Epitaxial Silicon Transistor
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP31A / TIP31C Rev. 1.1.0 4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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