BL Galaxy Electrical Production specification
NPN General Purpose Amplifier MMBT2369A
Document number: BL/SSSTC115 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 40 V
Collector-emitter breakdown
voltage
V(BR)CEO IC=10mA IB=0 B15 V
Emitter-base breakdown voltage V(BR)EBO IE=10μA IC=0 4.5 V
Collector cut-off current ICBO VCB=20V IE=0 0.4
μA
VCE=1.0V IC=10mA 120
VCE=0.35V IC=10mA 40
VCE=0.4V IC=30mA 30
DC current gain hFE
VCE=0.4V IC=30mA 20
Collector-emitter saturation
voltage
VCE(sat) IC=10mA IB=1.0mA B
IC=30mA IB=3.0mA B
IC=100mA IB=10mA B
0.2
0.25
0.5
V
Base-emitter saturation voltage VBE(sat) IC=10mA IB=1.0mA B
IC=30mA IB=3.0mA B
IC=100mA IB=10mA B
0.7 0.85
1.15
1.6
V
Output capacitance Cobo VCB=5V,IE=0.f=1.0MHz 4.0 pF
Storage time tSIB1=IB2=IC=10mA 5.0 13 ns
Turn-on time ton VCC=3V,IC=10mA,
IB1=3mA
8.0 12 ns
Turn-off time toff VCC=3V,IC=10mA,
IB1=3mA,IB2=1.5mA
10 18 ns