Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC...................................................................800A
●VCES ....................................................... 2500V
●Insulated Type
●1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM800HB-50H
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
CIRCUIT DIAGRAM
C
G
E
CC
EE
C
G
3 - M4 NUTS
4 - M8 NUTS
C
E
CM E
C
E
LABEL
40
28
57
±0.25
57
±0.25
140
114
130
18 61.5 5.2 40 15
29.5
48.8
124
±0.25
20
10.65 10.35
5
38
6 - φ7MOUNTING HOLES
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
http://store.iiic.cc/
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
V
V
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 1250V, IC = 800A, VGE = 15V
VCC = 1250V, IC = 800A
VGE1 = VGE2 = 15V
RG = 2.5Ω
Resistive load switching operation
IE = 800A, VGE = 0V
IE = 800A,
die / dt = –1600A / µs (Note 1)
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
IC = 80mA, VCE = 10V
IC = 800A, VGE = 15V (Note 4)
VCE = 10V
VGE = 0V
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
VGE = 0V
VCE = 0V
DC, TC = 110°C
Pulse (Note 1)
Pulse (Note 1)
TC = 25°C, IGBT part —
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Collector current
Emitter current
2500
±20
800
1600
800
1600
10400
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
MAXIMUM RATINGS (Tj = 25°C)
Symbol Item Conditions UnitRatings V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Tstg
Viso
—
—
Min Typ Max
10
0.5
3.64
—
—
—
—
—
1.60
2.00
2.50
1.00
3.25
1.20
—
0.012
0.024
—
mA
µA
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
—
—
2.80
3.15
120
13.2
4.0
5.4
—
—
—
—
2.50
—
230
—
—
0.008
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
(Note 2)
trr
(Note 2)
Qrr
(Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
6.04.5
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
7.5
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
http://store.iiic.cc/
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
COLLECTOR CURRENT I
C
(A)
800
400
0100 246
1200
8
1600 T
j
=25°C V
GE
=13V
V
GE
=12V
V
GE
=11V V
GE
=10V
V
GE
=9V
V
GE
=8V
V
GE
=7V
V
GE
=14V
V
GE
=15V
V
GE
=20V
0
1
2
3
4
5
0400 800 1200 1600
V
GE
=15V
T
j
= 25°C
T
j
= 125°C
1600
800
400
0
1200
200481216
V
CE
=10V
T
j
= 25°C
T
j
= 125°C
020161284
10
8
6
4
2
0
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
T
j
= 25°C
I
C
= 1600A
I
C
= 800A
I
C
= 320A
10
1
2310
–1
5710
0
23 5710
1
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25°C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
0400 800 1200 1600
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
EMITTER CURRENT I
E
(A)
5
4
3
2
1
0
T
j
= 25°C
T
j
= 125°C
http://store.iiic.cc/
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
5
3
2
710
2
10
0
7
23 5710
3
23 5
5
5
3
2
10
1
5
7
5
3
2
710
2
10
–1
7
23 5710
3
23 5
5
5
3
2
10
0
5
t
d(off)
V
CC
= 1250V, V
GE
= ±15V
R
G
= 2.5Ω, T
j
= 125°C
Inductive load
t
d(on)
t
r
t
f
V
CC
= 1250V, T
j
= 125°C
Inductive load
V
GE
= ±15V, R
G
= 2.5Ω
t
rr
I
rr
7
5
3
2
10
2
7
5
5
3
2
10
3
10
–2
10
–3
10
–2
10
–1
10
0
7
5
3
2
10
–1
7
5
3
2
10
0
10
1
7
5
3
2
23 57 23 57 23 57
Single Pulse
T
C
= 25°C
R
th(j – c)Q
= 0.012K/W
R
th(j – c)R
= 0.024K/W
20
16
12
8
4
08000 1000060000 2000 4000
V
CC
= 1250V
I
C
= 800A
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (µs)
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(µs)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j – c)
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
3.0
2.5
2.0
1.5
1.0
0.5
00 5 10 15 20 3025
GATE RESISTANCE (Ω)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
SWITCHING ENERGY (J/P)
0
0.5
1.0
1.5
2.0
0 400 800 16001200
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
CURRENT (A)
SWITCHING ENERGY (J/P)
V
CC
= 1250V, V
GE
= ±15V,
R
G
= 2.5Ω, Tj = 125°C,
Inductive load
E
on
E
rec
E
off
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