AUIRFZ44Z AUIRFZ44ZS AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS 55V RDS(on) max. 13.9m ID 51A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number Package Type AUIRFZ44Z TO-220 G TO-220AB AUIRFZ44Z D2Pak AUIRFZ44ZS G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 D2-Pak AUIRFZ44ZS S S D G Orderable Part Number AUIRFZ44Z AUIRFZ44ZS AUIRFZ44ZSTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V 51 ID @ TC = 100C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V (See Fig. 9) Pulsed Drain Current Maximum Power Dissipation 36 200 80 VGS EAS EAS (tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient ( PCB Mount, steady state) Max. Units A W 0.53 20 86 105 See Fig.15,16, 12a, 12b W/C V mJ A mJ -55 to + 175 C 300 10 lbf*in (1.1N*m) Typ. Max. Units --- 0.50 --- 1.87 --- 62 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-25 AUIRFZ44Z/ZS Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 55 --- --- 2.0 22 --- --- --- --- Typ. --- 0.054 11.1 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 13.9 m VGS = 10V, ID = 31A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 31A 20 VDS = 55V, VGS = 0V A 250 VDS = 55V,VGS = 0V,TJ =125C 200 VGS = 20V nA -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 29 7.2 12 14 68 33 41 43 11 18 --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- 1420 --- --- 240 --- --- 130 --- --- 830 --- --- 190 --- --- 300 --- Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 31A nC VDS = 44V VGS = 10V VDD = 28V ID = 31A ns RG= 15 VGS = 10V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz,See Fig.5 pF VGS = 0V, VDS = 1.0V = 1.0MHz VGS = 0V, VDS = 44V = 1.0MHz VGS = 0V, VDS = 0V to 44V Min. Typ. Max. Units --- --- 51 --- --- 200 --- --- --- --- 23 17 1.2 35 26 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 31A,VGS = 0V ns TJ = 25C ,IF = 31A , VDD = 28V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Limited by TJmax, starting TJ = 25C, L = 0.18mH, RG = 25, IAS = 31A, VGS =10V. Part not recommended for use above this value. ISD 31A, di/dt 840A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population 100% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is rated at TJ of approximately 90C. 2 2017-09-25 AUIRFZ44Z/ZS 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 10 4.5V 0.1 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C 1 BOTTOM 1 Tj = 175C 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig. 2 Typical Output Characteristics 60 Gfs, Forward Transconductance (S) 1000 ID , Drain-to-Source Current ) 1 V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 100 T J = 175C T J = 25C 10 VDS = 15V 60s PULSE WIDTH 1.0 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 50 T J = 25C 40 30 T J = 175C 20 10 V DS = 10V 0 12 0 10 20 30 40 50 ID ,Drain-to-Source Current (A) Fig. 4 Typical Forward Trans conductance vs. Drain Current 2017-09-25 AUIRFZ44Z/ZS 10000 12.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd VGS, Gate-to-Source Voltage (V) ID = 31A C, Capacitance(pF) Coss = Cds + Cgd Ciss 1000 Coss Crss 8.0 6.0 4.0 2.0 0.0 100 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 10 15 20 25 30 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 5 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 10 T J = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 T J = 175C 0.10 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.01 0.0 0.5 1.0 1.5 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 VDS = 44V VDS = 28V VDS = 11V 10.0 2.0 10msec 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2017-09-25 AUIRFZ44Z/ZS 55 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 50 ID, Drain Current (A) 45 40 35 30 25 20 15 10 5 0 ID = 31A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 175 -60 -40 -20 0 T C , Case Temperature (C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.1 0.20 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 1 2 2 3 Ri (C/W) i (sec) 0.8487 0.00044 0.6254 0.00221 0.3974 0.01173 C 3 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-09-25 AUIRFZ44Z/ZS 15V DRIVER D.U.T RG + V - DD IAS 20V tp 400 A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS ID TOP 3.8A 5.5A BOTTOM 31A 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 13a. Gate Charge Test Circuit Id Vds Vgs VGS(th) Gate threshold Voltage (V) 4.0 ID = 250A 3.0 2.0 1.0 Vgs(th) -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) Qgs1 Qgs2 Qgd Qgodr Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Waveform 6 2017-09-25 AUIRFZ44Z/ZS 100 Avalanche Current (A) Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 0.05 0.10 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 31A 80 60 40 20 PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 7 2017-09-25 AUIRFZ44Z/ZS Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2017-09-25 AUIRFZ44Z/ZS TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number AUFZ44Z YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code 9 2017-09-25 AUIRFZ44Z/ZS D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUFZ44ZS YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code 10 2017-09-25 AUIRFZ44Z/ZS D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 11 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2017-09-25 AUIRFZ44Z/ZS Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level TO-220 Pak N/A D2-Pak MSL1 Class M2 (+/- 200V) AEC-Q101-002 Class H1A (+/- 500V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Highest passing voltage. Revision History Date Comments 12/4/2015 Updated datasheet with corporate template Corrected ordering table on page 1. 09/25/17 Corrected typo error on part marking on pages 9,10. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2017-09-25