D44H11, D45H11
High Power Bipolar Transistors
Page 1 15/03/06 V1.0
Designed for various specific and general purpose application such as; output and
driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz;
series, shunt and switching regulators; low and high frequency inverters/converters
and many others.
Features:
••Very low collector saturation voltage.
••Excellent linearity.
••Fast switching.
••PNP values are negative, observe proper polarity.
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
NPN PNP
D44H11 D45H11
TO-220
10 Ampere
Complemetary Silicon
Power Transistors
80 Volts
50 Watts
D44H11, D45H11
High Power Bipolar Transistors
Page 2 15/03/06 V1.0
Thermal Characteristics
Maximum Ratings
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 2.5 °C/W
Characteristic Symbol D44H11
D45H11 Unit
Collector-Emitter Voltage VCEO
80
VCollector-Emitter Voltage VCES
Emitter-Base Voltage VEBO 5
Collector Current-Continuous
-Peak
IC
ICM
10
20 A
Base Current IB2
Total Power Dissipation at TC= 25°C
Derate above 25°C PD50
0.4
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 °C
Figure - 1 Power Derating
D44H11, D45H11
High Power Bipolar Transistors
Page 3 15/03/06 V1.0
Charecteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage
(IC= 30mA, IB= 0) VCEO (sus) 80 -V
Collector-Emitter Cut off Current
(VCE = 80V, VBE = 0) ICES -10
µA
Emitter-Base Cut off Current
(VEB = 50V, IC= 0) IEBO -100
Electrical Characteristics (TC= 25°C unless otherwise noted)
DC Current Gain
(IC= 2A, VCE = 1.0V)
(IC= 4A, VCE = 1.0V)
hFE 60
40
- -
Collector-Emitter Saturation Voltage
(IC= 8.0A, IB= 400mA) VCE (sat) -1.0
V
Base-Emitter Saturation Voltage
(IC= 8.0A, IB= 800mA) VBE (sat) -1.5
Dynamic Characteristics
Current Gain-Bandwidth Product (2) D44H11
(IC= 500mA, VCE = 10V, f = 0.5MHz) D45H11 fT15
12 -MHz
Output Capacitance D44H11
(VCB = 10V, IE= 0, f = 1.0MHz) D45H11 Cob 220
400 -PF
On Characteristics (1)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
(2) fT= hfe ••ftest.
Switching Characteristics
Rise Time
IC= 5A,
IB1 = -IB2 = 500mA
D44H11
D45H11 tr-0.5
0.6
µs
Storage Time D44H11
D45H11 ts-1.0
1.2
Fall Time D44H11
D45H11 tf-0.4
0.5
D44H11, D45H11
High Power Bipolar Transistors
Page 4 15/03/06 V1.0
DC Current Gain “ON” Voltages
Forward Bias Safe Operating Area
IC (av)
maximum
(A)
VCEO
maximum
(V)
hFE
minimum at
IC= 2A
Ptot
at 25°C
(W)
Type Part Number
10 80 60 50
NPN D44H11
PNP D45H11
Specifications
“ON” Voltages
For enquiries from all other markets
D44H11, D45H11
High Power Bipolar Transistors
Page 5 15/03/06 V1.0
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