/TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 40 55 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 80 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 210 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 40 A, VGE = 15 V IC = 40 A, VGE = 15 V Gatethresholdvoltage IC = 1,50 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C V 1200 VCE sat A A typ. max. 1,80 2,05 2,30 V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 0,33 C Internalgateresistor Tvj = 25C RGint 6,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,50 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,09 nF - Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA () Turn-ondelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGon = 27 Tvj = 25C Tvj = 125C td on 0,09 0,09 s s () Risetime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGon = 27 Tvj = 25C Tvj = 125C tr 0,03 0,05 s s () Turn-offdelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGoff = 27 Tvj = 25C Tvj = 125C td off 0,42 0,52 s s () Falltime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGoff = 27 Tvj = 25C Tvj = 125C tf 0,07 0,09 s s () Turn-onenergylossperpulse IC = 40 A, VCE = 600 V, LS = 45 nH VGE = 15 V RGon = 27 Tvj = 25C Tvj = 125C Eon 4,10 6,00 mJ mJ ( Turn-offenergylossperpulse IC = 40 A, VCE = 600 V, LS = 45 nH VGE = 15 V RGoff = 27 Tvj = 25C Tvj = 125C Eoff 3,10 3,60 mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC 0,60 K/W Temperatureunderswitchingconditions Tvj op -40 125 preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 1 tP 10 s, Tvj = 125C 160 A C /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1200 V IF 40 A IFRM 80 A It 320 As /CharacteristicValues min. typ. max. 1,75 1,75 2,30 Forwardvoltage IF = 40 A, VGE = 0 V IF = 40 A, VGE = 0 V Tvj = 25C Tvj = 125C Peakreverserecoverycurrent IF = 40 A, - diF/dt = 900 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C IRM 39,0 38,0 A A Recoveredcharge IF = 40 A, - diF/dt = 900 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Qr 4,20 7,80 C C Reverserecoveryenergy IF = 40 A, - diF/dt = 900 A/s (Tvj=125C) VR = 600 V VGE = -15 V Tvj = 25C Tvj = 125C Erec 1,35 2,80 mJ mJ VF V V Thermalresistance,junctiontocase /perdiode RthJC 0,95 K/W Temperatureunderswitchingconditions Tvj op -40 125 C ,/Diode,Rectifier /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C VRRM 1600 V () MaximumRMSforwardcurrentperchip TC = 80C IFRMSM 50 A MaximumRMScurrentatrectifieroutput TC = 80C IRMSM 75 A Surgeforwardcurrent tp = 10 ms, Tvj = 25C tp = 10 ms, Tvj = 150C IFSM 315 260 A A I2t- It-value tp = 10 ms, Tvj = 25C tp = 10 ms, Tvj = 150C It 500 340 As As /CharacteristicValues min. typ. max. VF 1,20 V IR 2,00 mA /perdiode RthJC Temperatureunderswitchingconditions Tvj op preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 Forwardvoltage Tvj = 150C, IF = 40 A Reversecurrent Tvj = 150C, VR = 1600 V Thermalresistance,junctiontocase 2 1,00 K/W C /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData IGBT,-/IGBT,Brake-Chopper /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 40 55 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 80 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 210 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 40 A, VGE = 15 V IC = 40 A, VGE = 15 V Gatethresholdvoltage IC = 1,50 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C V 1200 VCE sat A A typ. max. 1,80 2,05 2,30 V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 0,33 C Internalgateresistor Tvj = 25C RGint 6,0 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,50 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,09 nF - Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA () Turn-ondelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGon = 27 Tvj = 25C Tvj = 125C td on 0,09 0,09 s s () Risetime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGon = 27 Tvj = 25C Tvj = 125C tr 0,03 0,05 s s () Turn-offdelaytime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGoff = 27 Tvj = 25C Tvj = 125C td off 0,42 0,52 s s () Falltime,inductiveload IC = 40 A, VCE = 600 V VGE = 15 V RGoff = 27 Tvj = 25C Tvj = 125C tf 0,07 0,09 s s () Turn-onenergylossperpulse IC = 40 A, VCE = 600 V, LS = t.b.d. nH VGE = 15 V RGon = 27 Tvj = 25C Tvj = 125C Eon 4,10 6,00 mJ mJ ( Turn-offenergylossperpulse IC = 40 A, VCE = 600 V, LS = t.b.d. nH VGE = 15 V RGoff = 27 Tvj = 25C Tvj = 125C Eoff 3,10 3,60 mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC 0,60 K/W Temperatureunderswitchingconditions Tvj op -40 125 preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 3 tP 10 s, Tvj = 125C 160 A C /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData -/Diode,Brake-Chopper /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1200 V IF 15 A IFRM 30 A It 60,0 As /CharacteristicValues min. typ. max. 1,65 1,65 2,20 Forwardvoltage IF = 15 A, VGE = 0 V IF = 15 A, VGE = 0 V Tvj = 25C Tvj = 125C Peakreverserecoverycurrent IF = 15 A, - diF/dt = 400 A/s (Tvj=125C) VR = 600 V Tvj = 25C Tvj = 125C IRM 16,0 15,0 A A Recoveredcharge IF = 15 A, - diF/dt = 400 A/s (Tvj=125C) VR = 600 V Tvj = 25C Tvj = 125C Qr 1,80 3,00 C C Reverserecoveryenergy IF = 15 A, - diF/dt = 400 A/s (Tvj=125C) VR = 600 V Tvj = 25C Tvj = 125C Erec 0,55 1,10 mJ mJ Thermalresistance,junctiontocase /perdiode RthJC 1,50 K/W Temperatureunderswitchingconditions Tvj op -40 125 min. typ. max. R25 5,00 k R/R -5 5 % P25 20,0 mW VF V V C /NTC-Thermistor /CharacteristicValues Ratedresistance TC = 25C R100 DeviationofR100 TC = 100C, R100 = 493 Powerdissipation TC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 t.b.d. K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 t.b.d. K Specificationaccordingtothevalidapplicationnote. preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 4 /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min Materialofmodulebaseplate Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 2,5 kV Cu AI203 -/terminaltoheatsink -/terminaltoterminal 10,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 7,5 mm Comperativetrackingindex CTI > 225 Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting min. typ. RthCH 0,009 LsCE 60 nH RCC'+EE' RAA'+CC' 4,00 2,00 m Tstg -40 125 C M5 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Weight G 300 g preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 5 max. K/W /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 80 80 Tvj = 25C Tvj = 125C 70 60 60 50 50 IC [A] IC [A] 70 40 30 20 20 10 10 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 16 Tvj = 25C Tvj = 125C 70 50 10 E [mJ] 12 40 8 30 6 20 4 10 2 5 6 7 Eon, Tvj = 125C Eoff, Tvj = 125C 14 60 0 0,0 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=27,RGoff=27,VCE=600V 80 IC [A] 40 30 0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 8 9 VGE [V] 10 11 0 12 preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 6 0 10 20 30 40 IC [A] 50 60 70 80 /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=40A,VCE=600V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 10 1 Eon, Tvj = 125C Eoff, Tvj = 125C 9 ZthJC : IGBT 8 7 ZthJC [K/W] E [mJ] 6 5 4 0,1 3 2 i: 1 2 3 4 ri[K/W]: 0,06769 0,2709 0,1523 0,1052 i[s]: 0,002345 0,028 0,1128 0,282 1 0 0 10 20 30 RG [] 40 50 0,01 0,001 60 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=27,Tvj=125C 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 90 80 IC, Modul IC, Chip 80 Tvj = 25C Tvj = 125C 70 70 60 60 50 IF [A] IC [A] 50 40 40 30 30 20 20 10 10 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 7 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=27,VCE=600V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=40A,VCE=600V 4,0 4,0 Erec, Tvj = 125C 3,5 3,5 3,0 3,0 2,5 2,5 E [mJ] E [mJ] Erec, Tvj = 125C 2,0 2,0 1,5 1,5 1,0 1,0 0,5 0,5 0,0 0 10 20 30 40 IF [A] 50 60 70 0,0 80 , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0 10 20 30 RG [] 40 50 60 ,) forwardcharacteristicofDiode,Rectifier(typical) IF=f(VF) 1 80 ZthJC : Diode Tvj = 25C Tvj = 150C 70 60 IF [A] ZthJC [K/W] 50 0,1 40 30 20 i: 1 2 3 4 ri[K/W]: 0,09674 0,6249 0,18 0,05701 i[s]: 0,003333 0,03429 0,1294 0,7662 0,01 0,001 0,01 0,1 t [s] 1 10 0 10 preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 8 0,0 0,2 0,4 0,6 0,8 1,0 VF [V] 1,2 1,4 1,6 1,8 /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData IGBT,-) outputcharacteristicIGBT,Brake-Chopper(typical) IC=f(VCE) VGE=15V -) forwardcharacteristicofDiode,Brake-Chopper(typical) IF=f(VF) 80 80 Tvj = 25C Tvj = 125C 70 60 60 50 50 IF [A] IC [A] 70 40 40 30 30 20 20 10 10 0 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[] 10000 1000 100 0 20 40 Tvj = 25C Tvj = 125C 60 80 100 TC [C] 120 140 160 preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 9 0,0 0,5 1,0 1,5 2,0 VF [V] 2,5 3,0 3,5 4,0 /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData /circuit_diagram_headline /packageoutlines In fineon preparedby:AS dateofpublication:2013-10-03 approvedby:RS revision:2.1 10 /TechnicalInformation IGBT- IGBT-modules FP40R12KT3G PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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