BC817DS
NPN/NPN general purpose double transistors
25 June 2019 Product data sheet
1. General description
NPN/NPN general-purpose double transistors in an SOT457 (SC-74) plastic package.
PNP/PNP complement: BC807DS
NPN/PNP complement: BC817DPN
2. Features and benefits
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
3. Applications
General purpose switching and amplification
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter
voltage
open base - - 45 V
ICcollector current - - 500 mA
ICM peak collector current single pulse; tp ≤ 1 ms - - 1 A
hFE DC current gain VCE = 1 V; IC = 100 mA [1] 160 - 400
[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
1 32
456
SC-74; TSOP6 (SOT457)
sym020
B1
E1 C2
B2
C1
TR1
TR2
E2
Nexperia BC817DS
NPN/NPN general purpose double transistors
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BC817DS SC-74; TSOP6 plastic, surface-mounted package (SC-74; TSOP6); 6 leads SOT457
7. Marking
Table 4. Marking codes
Type number Marking code
BC817DS N3
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 5 V
ICcollector current - 500 mA
ICM peak collector current - 1 A
IBM peak base current
single pulse; tp ≤ 1 ms
- 200 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 370 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature -65 150 °C
Tstg storage temperature -65 150 °C
Per device
Ptot total power dissipation Tamb ≤ 25 °C [1] - 600 mW
[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin plated; mounting pad for collector 1 cm2.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1] - - 208 K/W
[1] Device mounted on an FR4 PCB; single-sided copper; tin-plated; mounting pad for collector 1 cm 2.
BC817DS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 2 / 7
Nexperia BC817DS
NPN/NPN general purpose double transistors
10. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCB = 20 V; IE = 0 A - - 100 nAICBO collector-base cut-off
current VCB = 20 V; IE = 0 A; Tj = 150 °C - - 5 µA
IEBO emitter-base cut-off
current
VEB = 5 V; IC = 0 A - - 100 nA
VCE = 1 V; IC = 100 mA [1] 160 - 400 hFE DC current gain
VCE = 1 V; IC = 500 mA [1] 40 - -
VCEsat collector-emitter
saturation voltage
IC = 500 mA; IB = 50 mA [1] - - 700 mV
VBE base-emitter voltage VCE = 1 V; IC = 500 mA [1] [2] - - 1.2 V
Cccollector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - 5 - pF
fTtransition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 - - MHz
[1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02
[2] VBE decreases by approximately -2 mV/k with increasing temperature.
mbl747
0
500
100
200
300
400
10- 1 1 10 102
IC (mA)
hFE
103
(3)
(1)
(2)
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 1. DC current gain as a function of collector
current; typical values
mbl748
0 10
1000
0
200
400
600
800
2 4 6 8
VCE (V)
IC
(mA)
IB (mA) = 15 13.5
12.0 10.5
9.0
6.0
7.5
4.5
3.0
1.5
Tamb = 25 °C
Fig. 2. Collector current as a function of collector-
emitter voltage; typical values
BC817DS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 3 / 7
Nexperia BC817DS
NPN/NPN general purpose double transistors
mbl749
103
102
10
10- 1 1 10
IC (mA)
VCEsat
(mV)
102103
(1)
(2)
(3)
IC/IB = 10
(1) Tamb = 150°C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 3. Collector-emitter saturation voltage as a
function of collector current; typical values
mbl750
200
1200
400
600
800
1000
10- 1 1 10 IC (mA)
VBE
(mV)
102103
(1)
(2)
(3)
VCE = 1 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 4. Base-emitter voltage as a function of collector
current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.0
2.5
1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
1 32
456
18-03-11Dimensions in mm
Fig. 5. Package outline SC-74; TSOP6 (SOT457)
BC817DS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 4 / 7
Nexperia BC817DS
NPN/NPN general purpose double transistors
13. Soldering
solder lands
solder resist
occupied area
solder paste
sot457_fr
3.45
1.95
2.8253.3
0.45
(6×)
0.55
(6×)
0.7
(6×)
0.8
(6×)
2.4
0.95
0.95
Dimensions in mm
Fig. 6. Reflow soldering footprint for SC-74; TSOP6 (SOT457)
sot457_fw
5.3
5.05
1.45
(6×)
0.45
(2×)
1.5
(4×)
2.85
1.475
1.475
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
Fig. 7. Wave soldering footprint for SC-74; TSOP6 (SOT457)
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
BC817DS v.3 20190625 Product data sheet - BC817DS v.2
Modifications: The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
BC817DS v.2 20021122 Product data sheet - BC817DS v.1
BC817DS v.1 20020809 Product data sheet - -
BC817DS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 5 / 7
Nexperia BC817DS
NPN/NPN general purpose double transistors
15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification This document contains data from
the preliminary specification.
Product [short]
data sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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Characteristics sections of this document is not warranted. Constant or
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BC817DS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 6 / 7
Nexperia BC817DS
NPN/NPN general purpose double transistors
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 2
10. Characteristics............................................................ 3
11. Test information.......................................................... 4
12. Package outline.......................................................... 4
13. Soldering..................................................................... 5
14. Revision history..........................................................5
15. Legal information........................................................6
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 25 June 2019
BC817DS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 7 / 7