Plastic Medium-Power PNP
Silicon Transistors
. . . designed for use in general–purpose amplifier and switching
circuits. Recommended for use in 5 to 20 Watt audio amplifiers
utilizing complementary symmetry circuitry.
•DC Current Gain —
hFE = 40 (Min) @ IC
= 1.0 Adc
•MJE371 is Complementary to NPN MJE521
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
40
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
40
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
— Peak
ÎÎÎÎ
ÎÎÎÎ
IC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.0
8.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
40
320
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
mW/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature
Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎ
ÎÎÎÎ
θJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
3.12
ÎÎÎ
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VCEO(sus)
40
—
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Cutoff Current
(VCB = 40 Vdc, IE = 0)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
ICBO
ÎÎÎ
—
ÎÎ
100
ÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
IEBO
ÎÎÎ
—
ÎÎ
100
ÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
hFE
40
—
—
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 5 1Publication Order Number:
MJE371/D
MJE371
4 AMPERE
POWER TRANSISTOR
PNP SILICON
40 VOLTS
40 WATTS
CASE 77–09
TO–225AA TYPE
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MJE371
http://onsemi.com
2
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.5
40
0.1
0.3
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
Figure 1. Active–Region Safe Operating Area
5.0
20106.02.0
TJ = 150°C
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
3.0
0.2
604.0 8.0
1.0ms
dc
100µs
5.0ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN, NORMALIZED
7.0
10
0.02 0.03 0.1 4.00.01
1.0
0.7
0.5
0.1
0.05 0.3 0.50.2
150°CTJ = 25°C
-55°C
Figure 2. DC Current Gain Figure 3. “On” Voltage
2.0
IC, COLLECTOR CURRENT (AMP)
1.6
0.4
0
TJ = 25°C
VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
5.0
0.3
0.2
1.2
0.8
t, TIME OR PULSE WIDTH (ms)
0.01
0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), EFFECTIVE TRANSIENT
θJC(t) = r(t) θJC
θJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
THERMAL RESISTANCE (NORMALIZED)
Figure 4. Thermal Response
0.5 D = 0.5
0.1
0.01
0.3
0.7
0.07
0.03
0.02
3.0
2.0
1.0 3.02.0
VCE = 1.0 Vdc
VCE(sat) @ IC/IB = 10
0.01 0.02 0.05 4.00.005 0.03 0.2 0.30.1 0.5 2.0 3.01.0
0.02 0.05 0.3 3.0 500 1000
0.02
0.05
0.2
MJE371
http://onsemi.com
3
PACKAGE DIMENSIONS
CASE 77–09
ISSUE W
TO–225AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---

STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MJE371
http://onsemi.com
4
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