© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 9
1Publication Order Number:
2N6394/D
2N6394 Series
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Features
•Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 V
•These are Pb−Free Devices
MAXIMUM RATINGS† (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open) 2N6394
2N6395
2N6397
2N6399
VDRM,
VRRM 50
100
400
800
V
On-State RMS Current
(180° Conduction Angles; TC = 90°C)
IT(RMS) 12 A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C)
ITSM 100 A
Circuit Fusing (t = 8.3 ms) I2t 40 A2s
Forward Peak Gate Power
(Pulse Width ≤1.0 ms, TC = 90°C)
PGM 20 W
Forward Average Gate Power
(t = 8.3 ms, TC = 90°C)
PG(AV) 0.5 W
Forward Peak Gate Current
(Pulse Width ≤1.0 ms, TC = 90°C)
IGM 2.0 A
Operating Junction Temperature Range TJ−40 to +125 °C
Storage Temperature Range Tstg −40 to +150 °C
MAXIMUM RATINGS † (TJ = 25°C unless otherwise noted)
Rating Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 10 Seconds
TL260 °C
†Indicates JEDEC Registered Data
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
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SCRs
12 AMPERES RMS
50 thru 800 VOLTS
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4Anode
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
TO−220AB
CASE 221A
STYLE 3
123
4
2N639x = Device Code
x = 4, 5, 7, or 9
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MARKING
DIAGRAM
2N639xG
AYWW
2N6394 Series
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
†Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM, IRRM
−
−
−
−
10
2.0
mA
mA
ON CHARACTERISTICS
†Peak Forward On−State Voltage (Note 2) (ITM = 24 A Peak) VTM −1.7 2.2 V
†Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) IGT −5.0 30 mA
† Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) VGT −0.7 1.5 V
Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 Ohms, TJ = 125°C) VGD 0.2 − − V
† Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH−6.0 50 mA
Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM) tgt −1.0 2.0 ms
Turn-Off Time (VD = Rated VDRM)(I
TM = 12 A, IR = 12 A)
(ITM = 12 A, IR = 12 A, TJ = 125°C)
tq−
−
15
35
−
−
ms
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off-State Voltage Exponential
(VD = Rated VDRM, TJ = 125°C)
dv/dt −50 −V/ms
†Indicates JEDEC Registered Data
2. Pulse Test: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%.
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
C
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)°
6.0
120
90
100
110
130
60°
α = 30°
0 1.0 2.0 3.0 8.0
α = CONDUCTION ANGLE
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
α
90°
4.0 5.0 7.0
180°
dc
125
95
105
115
Figure 1. Current Derating
P , AVERAGE POWER (WATTS)
(AV)
12
0
4.0
8.0
20
TJ ≈ 125°C
IT(AV), AVERAGE ON‐STATE CURRENT (AMPS)
7.00 1.0 2.0 3.0 8.0
α = CONDUCTION ANGLE
α
10
2.0
6.0
18
14
16
4.0 5.0 6.0
60°
α = 30°
90°
180°dc
Figure 2. Maximum On−State Power Dissipation
2N6394 Series
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3
100
1.2 1.0
60
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TJ = 125°C
f = 60 Hz
NUMBER OF CYCLES
70
80
90
100
2.0 3.0 4.0 6.0 8.0 10
0.1
0.4
50
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
vTH, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
2.8 4.43.6 5.2 6.02.0
I , PEAK SURGE CURRENT (AMP)
TSM
TM
i , INSTANTANEOUS ON-STATE CURRENT (AMPS)
TJ = 25°C
125°C
1 CYCLE
55
65
75
85
95
Figure 3. On−State Characteristics Figure 4. Maximum Non−Repetitive Surge Current
1.0
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.2 0.3 0.5 1.0 2.00.1
ZqJC(t) = RqJC • r(t)
20
0.01
t, TIME (ms)
3.0 5.0 30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 101.0 k
Figure 5. Thermal Response
2N6394 Series
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4
I , HOLDING CURRENT (mA)
H
TYPICAL CHARACTERISTICS
1401201008060400-60
30
-20-40 20
TJ, JUNCTION TEMPERATURE (°C)
20
10
3.0
3.0
1.0
0.7
0.5
0.3
5.0
2.0
OFF‐STATE VOLTAGE = 12 V OFF‐STATE VOLTAGE = 12 V
30
50
20
10
5.0
70
7.0
1401201008060400-20-40 20
TJ, JUNCTION TEMPERATURE (°C)
2001005020105.00.2 1.00.5 2.0
PULSE WIDTH (ms)
IGTM
IGT
VGT
1401201008060400-60
1.0
-20-40 20
TJ, JUNCTION TEMPERATURE (°C)
0.8
0.6
0.4
0.5
, PEAK GATE CURRENT (mA)
3.0
100
200
300
160
,
G
ATE TRI
GG
ER V
O
LTA
G
E
(
V
O
LT
S)
0.7
1.1
0.9
OFF‐STATE VOLTAGE = 12 V OFF‐STATE VOLTAGE = 12 V
7.0
TJ = -40°C
25°C
100°C
, GATE TRIGGER CURRENT (NORMALIZED)
Figure 6. Typical Gate Trigger Current
versus Pulse Width
Figure 7. Typical Gate Trigger Current
versus Temperature
Figure 8. Typical Gate Trigger Voltage
versus Temperature
Figure 9. Typical Holding Current
versus Temperature
ORDERING INFORMATION
Device Package Shipping**
2N6394G
TO−220AB
(Pb−Free)
500 Units / Bulk
2N6394TG 50 Units / Rail
2N6395G 500 Units / Bulk
2N6397G 500 Units / Bulk
2N6397TG 50 Units / Rail
2N6399G 500 Units / Bulk
2N6399TG 50 Units / Rail
**For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2N6394 Series
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5
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
123
4
−T−SEATING
PLANE
S
R
J
U
TC
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
2N6394/D
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