© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 3 1Publication Order Number:
NRTSAF260E/D
NRTSAF260E,
NRVTSAF260E
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•Low Thermal Resistance
•High Surge Capability
•NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
•Case: Molded Epoxy
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Weight: 95 mg (Approximately)
•Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
•MSL 1
Typical Applications
•Switching Power Supplies including Compact Adapters and Flat
Panel Display
•High Frequency and DC−DC Converters
•Freewheeling and OR−ing diodes
•Reverse Battery Protection
•Instrumentation
•Automotive LED Lighting (Interior and Exterior)
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
60 VOLTS
MARKING DIAGRAM
SMA−FL
CASE 403AA
SYTLE 6
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NRTSAF260ET3G SMA−FL
(Pb−Free) 10,000/
Tape & Ree
l
NRVTSAF260ET3G SMA−FL
(Pb−Free) 10,000/
Tape & Ree
l
www.onsemi.com
26E = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
26E
AYWWG
NRTSAF260E, NRVTSAF260E
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 V
Average Rectified Forward Current
(TL = 150°C) IO2.0 A
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TL = 147°C) IFRM 4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A
Storage and Operating Junction Temperature Range (Note 1) Tstg, TJ−65 to +175 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C) dv/dt 10,000 V/ms
Controlled Avalanche Energy WAVAL 20 mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2) YJCL 24.6 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 79 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 239 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF0.47
0.38
0.53
0.47
0.55
0.65
0.47
0.58
V
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR3.0
1.0 12
3.0 mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
NRTSAF260E, NRVTSAF260E
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics Figure 2. Maximum Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.10.90.70.50.30.1
1
10
100
0.90.50.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
6040302010 50302010
Figure 5. Typical Junction Capacitance
VR, REVERSE VOLTAGE (V)
0.1
100
1000
iF, INSTANTANEOUS FORWARD
CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
1.1
iF, INSTANTANEOUS FORWARD
CURRENT (A)
50
1.E−07
1.E−06
1.E−05
1.E−01
40
1.E−05
1.E−01
IR, INSTANTANEOUS REVERSE CURRENT (A)
TA = 85°C
TA = 125°C
TA = −55°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = −55°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 25°C
1.E−04
TJ = 25°C
0.3 0.7
TA = 150°C
TA = 85°C
TA = 85°C
0.1 0.1
1.E−02 TA = 150°C
TA = 125°C
TA = 25°C
TA = 85°C
60
110
1.E−06
10
1.E−03
1.E−04
1.E−03
1.E−02
TA = 175°CTA = 175°C
TA = 175°CTA = 175°C
Figure 6. Current Derating
TL, LEAD TEMPERATURE (°C)
0
2.0
IF(AV), AVERAGE FORWARD CURRENT (A)
RqJL = 24.6°C/W
120
0
3.0
1.0
SQUARE WAVE
DC
20 40 60 80 100 140 160
1.00.80.60.40.2
2.5
3.5
1.5
0.5
45352515 555 45352515 555
NRTSAF260E, NRVTSAF260E
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (A)
0
3
6
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
IPK/IAV
= 20
0.5 2.0
01.0 1.5 2.5 3.0
1
2
5
4
IPK/IAV = 10
IPK/IAV = 5
DC
Square Wave
0.1
1
10
1E−07 0.0001 10000.001 0.01 0.1 1 10 100
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
t, PULSE TIME (S)
50% Duty Cycle
20%
10%
5%
2%
1%
1E−06 1E−05
R(t), TYPICAL TRANSIENT
THERMAL RESISTANCE (°C/W)
Single Pulse
0.01
0.001
100
0.1
1
10
1000
1E−07 0.0001 10000.001 0.01 0.1 1 10 100
Figure 9. Typical Transient Thermal Response, Junction−to−Ambient
t, PULSE TIME (S)
50% Duty Cycle
20%
10%
5%
2%
1%
1E−06 1E−05
R(t) (°C/W)
Single Pulse
0.01
0.001
100
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Assumes 25°C ambient and soldered to
a 700 mm2 − 1 oz copper pad on PCB
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Assumes 25°C ambient and soldered to
a 20 mm2 − 1 oz copper pad on PCB
SMA−FL
CASE 403AA−01
ISSUE O
DATE 02 MAR 2011
D
E
b
L
c
SCALE 2:1
SOLDER FOOTPRINT*
DIMENSIONS: MILLIMETERS
5.56
1.76
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
1.30
RECOMMENDED
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM MIN MAX
MILLIMETERS
A0.90 1.10
b1.25 1.65
c0.15 0.30
D2.40 2.80
TOP VIEW
E1
BOTTOM VIEW
2X
2X
SIDE VIEW
A
CSEATING
PLANE
E4.80 5.40
E1 4.00 4.60
L0.70 1.10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SMA−FL
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