© by SEMIKRON 020826 1
SKM 200 GB 128 D
I:\Marketin\FRAMEDAT\datbl\B06-igbt\200gb128d.fm
Absolute Maximum Ratings
Symbol Conditions Values Units
IGBT
VCES
IC
ICRM
VGES
Tvj, (Tstg)
Visol
Tcase = 25 (80) °C
Tcase = 25 (80) °C, tp =1 ms
TOPERATION ≤ Tstg
AC, 1 min.
1200
285 (205)
650 (470)
± 20
– 40 ... +150 (125)
4000
V
A
A
V
°C
V
Inverse Diode
IFAV = – IC
IFRM
IFSM
Tcase = 25 (80) °C
Tcase = 25 (80) °C, tp < 1 ms
tp = 10 ms; sin.; Tj = 150 °C
190 (130)
650 (470)
1450
A
A
A
Freewheeling Diode
IFAV = – IC
IFRM
IFSM
Tcase = 25 (80) °C
Tcase = 25 (80) °C, tp < 1 ms
tp = 10 ms; sin.; Tj = 150 °C
A
A
A
Characteristics
Symbol Conditions min. typ. max. Units
IGBT
VGE(TO)
ICES
VCE(TO)
rCE
VCE(sat)
VGE = VCE, IC = 6 mA
VGE = 0, VCE = VCES, Tj = 25 (125) °C
Tj = 25 (125) °C
VGE = 15 V, Tj = 25 (125) °C
IC = 150 A, VGE = 15 V, chip level
4,5 5,5
1,0 (0,9)
6,7 (9,3)
2,0 (2,3)
6,45
tbd
1,15
8,3(tbd)
2,4
V
mA
V
mΩ
V
Cies
Coes
Cres
LCE
RCC´+ EE´
VGE = 0, VCE = 25 V, f = 1 MHz
resistance, terminal-chip 25 (125) °C
13
2
2
0,35 (0,5) 20
nF
nF
nF
nH
mΩ
td(on)
tr
td(off)
tf
Eon (Eoff )
under following conditions:
VCC = 600 V, IC = 150 A
RGon = RGoff = 7 Ω, Tj = 125 °C,
VGE ± 15 V
125
50
620
55
18 (15)
ns
ns
ns
ns
mJ
Inverse Diode under following conditions:
VF = VEC
VT(TO)
rT
IRRM
Qrr
Err
IF = 150 A; VGE = 0 V; Tj = 25 (125) °C
Tj = 25 (125) °C
Tj = 25 (125) °C
IF = 150 A; Tj = 125 °C
di/dt = 4800 A/µs
VGE = 0 V
2,0 (1,8)
1,1 (tbd)
6 (tbd)
190
24
8
2,5
1,2
8,7(tbd)
V
V
mΩ
A
µC
mJ
FWD under following conditions:
VF = VEC
VTO
rT
IRRM
Qrr
Err
IF = A; VGE = 0 V; Tj = 25 (125) °C
Tj = 25 (125) °C
Tj = 25 (125) °C
IF = A; Tj = 125 °C
VGE = 0 V
V
V
mΩ
A
µC
mJ
Thermal Characteristics
Rth(j-c)
Rth(j-c)D
Rth(j-c)FD
Rth(c-s)
per IGBT
per Inverse Diode
per FWD
per module
0,095
0,25
–
0,038
K/W
K/W
K/W
K/W
Mechanical Data
Ms
Mt
w
to heatsink (M6)
for terminals (M5) 3
2,5 5
5
325
Nm
Nm
g
Tcase = 25 °C, unless otherwise specified
Tcase = 25 °C, unless otherwise specified
SEMITRANSTM M
SPT IGBT Module
SKM 200 GB 128 D
Preliminary Data
Features
•Homogeneous Si
•SPT = Soft-Punch-Through
technology
•VCE(sat) with positive temperature
coefficient
•High short circuit capability, self
limiting to 6 x IC
Typical Applications
•AC inverter drives
•UPS
•Electronic welders fsw up to
20kHz
GB
SEMITRANS 3
