© 2011 Microchip Technology Inc. Preliminary DS75017A
MRF89XAM9A
Data Sheet
915 MHz Ultra Low-Power Sub-GHz
Transceiver Module
DS75017A-page 2 Preliminary © 2011 Microchip Technology Inc.
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© 2011, Microchip Technology Incorporated, Printed in the
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Printed on recycled paper.
ISBN: 978-1-61341-343-2
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© 2011 Microchip Technology Inc. Preliminary DS75017A-page 1
MRF89XAM9A
Features
Module designed from the MRF89XA Integrated
Ultra Low-Power, Sub-GHz Transceiver IC.
Supports MiWi™ Development Environment
Proprietary Wireless Networking Protocols
4-Wire Serial Peripheral Interface (SPI) with
Interrupts
Small Size: 0.7" x 1.1" (17.8 mm x 27.9 mm),
Surface Mountable – Pin compatible with
MRF89XAM8A
Integrated Crystal, Internal Voltage Regulator,
Matching Circuitry and Printed Circuit Board
(PCB) Antenna
Easy Integration into Final Product – Minimize
Product Development, Quicker Time to Market
Compatible with Microchip’s Microcontroller
Families (PIC16, PIC18, PIC24, dsPIC33 and
PIC32)
Modular Device Approval for United States (FCC),
Canada (IC) and Radio Regulation Certified for
Australia/New Zealand (C-TICK)
Operational
Operating Voltage: 2.1–3.6V (3.3V typical)
Temperature Range: -40°C to +85°C Industrial
Low-Current Consumption:
- Rx mode: 3 mA (typical)
- Tx mode: 25 mA at +10 dBm (typical)
- Sleep: 0.1 µA (typical)
RF/Analog Features
ISM Band 902–928 MHz Operation
Modulation: FSK and OOK
Data Rate:
- FSK: 200 kbps
- OOK: 28 kbps
Reception sensitivity
- FSK: -105 dBm (typical) at 25 kbps
- OOK: -111 dBm (typical) at 2 kbps
+10 dBm Typical Output Power with 21 dB Tx
Power Control Range
Media Access Controller (MAC)/
Baseband Features
Packet handling feature with data whitening and
automatic CRC generation
Incoming sync word (pattern) recognition
Built-in bit synchronizer for incoming data, and clock
synchronization and recovery
64-byte transmit/receive FIFO with preload in Stand-by
mode
Supports Manchester encoding/decoding
techniques
Pin diagram
2
3
4
5
6
1
7
VIN
GND
8
9
10
RESET
CSCON
SDO
SDI
SCK
CSDATA
IRQ1
GND
IRQ0
12
11 GND
915 MHz Ultra Low-Power Sub-GHz Transceiver Module
MRF89XAM9A
DS75017A-page 2 Preliminary © 2011 Microchip Technology Inc.
Table of Contents
1.0 Device Overview .......................................................................................................................................................................... 3
2.0 Circuit Description ........................................................................................................................................................................ 9
3.0 Regulatory Approval................................................................................................................................................................... 17
4.0 Electrical Characteristics ............................................................................................................................................................ 21
Appendix A: Revision History............................................................................................................................................................... 27
The Microchip Web Site ....................................................................................................................................................................... 29
Customer Change Notification Service ................................................................................................................................................ 29
Customer Support ................................................................................................................................................................................ 29
Reader Response ................................................................................................................................................................................ 30
Product Identification System............................................................................................................................................................... 31
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© 2011 Microchip Technology Inc. Preliminary DS75017A-page 3
MRF89XAM9A
1.0 DEVICE OVERVIEW
The MRF89XAM9A is an ultra low-power sub-GHz
surface mount transceiver module with integrated
crystal, internal voltage regulator, matching circuitry
and PCB antenna. The MRF89XAM9A module
operates in the United States/Canada 902–928 MHz
ISM frequency band. The integrated module design
frees the integrator from extensive RF and antenna
design, and regulatory compliance testing, allowing
quicker time to market.
The MRF89XAM9A module is compatible with
Microchip’s MiWi™ Development Environment software
stacks. The software stacks are available as a free
download, including source code, from the Microchip’s
web site http://www.microchip.com/wireless.
The MRF89XAM9A module has received regulatory
approvals for modular devices in the United States
(FCC) and Canada (IC). Modular device approval
removes the need for expensive RF and antenna
design, and allows the user to place the MRF89XAM9A
module inside a finished product and not require
regulatory testing for an intentional radiator (RF
transmitter). To maintain conformance, refer to module
settings in Section 3.1.1, MRF89XAM9A SETTINGS
for the United States and Section 3.2.1, MRF89XAM9A
SETTINGS for Canada.
1.1 Interface description
The simplified block diagram of the MRF89XAM9A
module is shown in Figure 1-1. The module is based on
the Microchip Technology MRF89XA Ultra Low-Power
Sub-GHz Transceiver Integrated Circuit (IC). The
module interfaces to many popular Microchip PIC®
microcontrollers through a 3-wire serial SPI interface,
two chip selects (configuration and data), two interrupts
Interrupt Request 0 (IRQ0) and Interrupt Request 1
(IRQ1), Reset, Power and Ground as shown in
Figure 1-2. Table 1-1 provides the pin descriptions.
Data communication and module configuration are
documented in the “MRF89XA Ultra Low-Power,
Integrated Sub-GHz Transceiver” (DS70622) Data
Sheet. For more information on specific serial interface
protocol and general register definitions, refer to the
MRF89XA Data Sheet” and see Section 1.3,
Operation for specific register settings unique to the
MRF89XAM9A module operation to maintain
regulatory compliance.
FIGURE 1-1: MRF89XAM9A BLOCK DIAGRAM
MRF89XA
Control
Interface
Power
Management
BasebandRF
MRF89XAM9A Module
SPI Digital I/O
IRQ0
Power
12.8 MHz Crystal
Matching
Circuitry
and
SAW Filter
PCB
Antenna
Loop
Filter
VCO
Tank
IRQ1
CSDATA
CSCON
RESET
MRF89XAM9A
DS75017A-page 4 Preliminary © 2011 Microchip Technology Inc.
TABLE 1-1: PIN DESCRIPTION
FIGURE 1-2: MICROCONTROLLER TO MRF89XAM9A INTERFACE
Pin Symbol Type Description
1 GND Power Ground
2 RESET DI Reset Pin. For more information, refer to Section 1.3.1, Reset
3CSCON DI Serial Interface Configure Chip Select
4 IRQ0 DO Interrupt Request Output
5 SDI DI Serial Interface Data Input
6 SCK DI Serial Interface Clock
7 SDO DO Serial Interface Data Output
8CSDATA DI Serial Interface Data Chip Select
9 IRQ1 DO Interrupt Request Output
10 Vin Power Power Supply
11 GND Power Ground
12 GND Power Ground
PIC® Microcontroller
I/O
I/O
SDO
SDI
SCK
INTx
INTx
I/O
MRF89XAM9A
CSCON
CSDATA
SDI
SDO
SCK
IRQ0
IRQ1
RESET
VIN
GND
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 5
MRF89XAM9A
1.2 Mounting Details
The MRF89XAM9A is a surface mountable module.
The dimensions of the module are shown in
Figure 1-3. The module PCB is 0.032" thick with
castellated mounting holes on the edge. Figure 1-4 is
the recommended host PCB footprint for the
MRF89XAM9A.
The MRF89XAM9A has an integrated PCB antenna.
For the best performance, follow the mounting details
shown in Figure 1-5. It is recommended that the
module be mounted on the edge of the host PCB and
an area around the antenna, approximately 3.4" (8.6
cm), be kept clear of metal objects for best
performance. A host PCB ground plane around the
MRF89XAM9A acts as a counterpoise to the PCB
antenna. It is recommended to extend the ground plane
at least 0.4" (1 cm) around the module.
FIGURE 1-3: MODULE DETAILS
FIGURE 1-4: RECOMMENDED PCB FOOTPRINT
MRF89XAM9A
DS75017A-page 6 Preliminary © 2011 Microchip Technology Inc.
FIGURE 1-5: MOUNTING DETAILS
3.4”
3.4”
0.4”
0.4”
Edge of PCB
0.470”
Keep area around the antenna,
approximately 3.4” (6.8 cm), be
kept clear of metallic objects for
best performance.
Host PCB top copper ground plane
(antenna counterpoise): Extend the
host PCB top copper ground plane
under and to the left and right side
of the module at least 0.4 inches (1
cm) for best antenna performance.
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 7
MRF89XAM9A
1.3 Operation
The MRF89XAM9A module is based on the
Microchip’s MRF89XA Ultra Low-Power, Integrated
ISM Band Sub-GHz Transceiver IC. Data
communication and module configuration are
documented in the “MRF89XA Ultra Low-Power,
Integrated ISM Band Sub-GHz Transceiver Data
Sheet” (DS70622).
This section emphasizes operational settings that are
unique to the MRF89XAM9A module design that must
be followed for proper operation.
1.3.1 RESET
Pin 2 of the module, RESET, allows an external reset of
the MRF89XA IC. RESET is connected to the TEST8
pin of the MRF89XA IC. During normal operations of
the MRF89XAM9A, the RESET pin should be held in a
high impedance state. For more information on
assertion of the RESET pin, refer to “Section 3.1.2
Manual Reset” in the “MRF89XA Data Sheet
(DS70622).
1.3.2 CRYSTAL FREQUENCY
When calculating frequency deviation, bit rate, receiver
bandwidth, and PLL R, P and S values, use crystal
frequency fxtal = 12.8 MHz.
1.3.3 CLOCK OUTPUT (CLKOUT)
The CLKOUT pin 19 of the MRF89XA IC is not used on
the module. Ensure that the CLKOUT signal is disabled
to minimize current consumption.
1.3.4 FREQUENCY BAND SELECT
The Frequency Band Select (FBS<1:0>) bits in the
GCONREG<4:3> should be set for target channel
range 902–915 MHz FBS<1:0> = '00' or 915–928 MHz
FBS<1:0> = '01'.
1.3.5 VCO TANK TRIM VALUE
The VCO Trim (VCOT<1:0>) bits in the
GCONREG<2:1> should be set for VCOT<1:0> = '01'
for the inductor values of the module.
1.3.6 BIT RATE
The maximum bit rate value will be limited to 28 kbps
for OOK modulation due to the crystal frequency of
12.8 MHz.
MRF89XAM9A
DS75017A-page 8 Preliminary © 2011 Microchip Technology Inc.
NOTES:
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 9
MRF89XAM9A
2.0 CIRCUIT DESCRIPTION
The MRF89XAM9A module interfaces to Microchip’s
PIC16, PIC18, PIC24, dsPIC33 and PIC32
microcontrollers with a minimum of external
components through digital only connections. An
example application schematic is shown in Figure 2-2.
2.1 Module Schematic
The MRF89XAM9A module is based on the
Microchip’s MRF89XA Ultra Low-Power, Integrated
ISM Band Sub-GHz Transceiver IC. The serial I/O
(CSCON, CSDATA, SCK, SDO and SDI), RESET,
IRQ0 and IRQ1 pins are routed out and available on
the module pins as shown in Figure 2-2. Crystal X1 is
a 12.8 MHz crystal with a frequency tolerance of ±10
ppm at 25°C. The RFIO output is matched to the SAW
filter FL1 and further matched to the PCB trace
antenna.
Figure 2-2 illustrates the MRF89XAM9A schematics.
Table 2-1 details the Bill of Materials (BOM).
FIGURE 2-1: MRF89XAM9A APPLICATION SCHEMATIC
Note 1
+C2
1 0
μ
F
C1
0.1
μ
F
To Host
Microcontroller
To Host
Microcontroller
U1
MRF89XAM9A-I/RM
+ 3.3V
GND
RESET
CSCON
IRQ0
SDI
SCK
GND
GND
V
IN
IRQ1
CSDATA
SDO
1
2
3
4
5
6
12
11
10
9
8
7
Note: For battery powered applications, place a 10 μF capacitor in parallel with the 0.1 μF bypass
capacitor to provide a low impedance during startup sequences.
MRF89XAM9A
DS75017A-page 10 Preliminary © 2011 Microchip Technology Inc.
FIGURE 2-2: MRF89XAM9A SCHEMATIC
Note: Designators not used: C6, L5
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 11
MRF89XAM9A
TABLE 2-1: MRF89XAM9A BILL OF MATERIALS
Desi
gnat
or Value Description Manufacturer Part Number
C1 0.047 µF Capacitor, Ceramic, 10V, ±10%, X7R, SMT
0402
Murata GRM155R71A473KA01D
C2 0.22 µF Capacitor, Ceramic, 16V, ±10%, X7R, SMT
0402
Murata GRM155R71C224KA12D
C3 1 µF Capacitor, Ceramic, 6.3V, ±10%, X5R, SMT
0603
Murata GRM188R60J105KA01D
C4 30 pF Capacitor, Ceramic, 50V, ±5%, UHI-Q NP0,
SMT 0402
Johanson Technology 250R07S300JV4T
C5 1.8 pF Capacitor, Ceramic, 50V, ±0.1 pF, UHI-Q
NP0, SMT 0402
Johanson Technology 500R07S1R8BV4
C6 Designator not used
C7 33 pF Capacitor, Ceramic, 50V, ±5%, C0G, SMT
0402
Murata GRM1555C1H330JZ01D
C8 0.1 µF Capacitor, Ceramic, 16V, ±10%, X7R, SMT
0402
Murata GRM155R71C104KA88D
C9 680 pF Capacitor, Ceramic, 50V, ±5%, C0G, SMT
0402
Murata GRM1555C1H681JA01D
C10 0.01 µF Capacitor, Ceramic, 16V, ±10%, X7R, SMT
0402
Murata GRM155R71C103KA01D
C11 1.0 pF Capacitor, Ceramic, 50V, ±0.1 pF, UHI-Q
NP0, SMT 0402
Johanson Technology 500R07S1R0BV4
C12 0.9 pF Capacitor, Ceramic, 50V, ±0.1 pF, UHI-Q
NP0, SMT 0402
Johanson Technology 500R07S0R9BV4
FL1 TA0281A Filter, SAW, 902–928 MHz Tai-saw Technology TA0281A
L1 10 nH Inductor, Ceramic, ±5%, SMT 0402 Johanson Technology L-07C10NJV6T
L2 100 nH Inductor, Ceramic, ±5%, SMT 0402 Johanson Technology L-07CR10JV6T
L3 5.6 nH Inductor, Wirewound, ±5%, SMT 0402 Johanson Technology L-07W5N6JV4T
L4 5.6 nH Inductor, Wirewound, ±5%, SMT 0402 Johanson Technology L-07W5N6JV4T
L5 Designator not used
L6 10 nH Inductor, Ceramic, ±5%, SMT 0402 Johanson Technology L-07C10NJV6T
R1 1ΩResistor, 1%, ±100 ppm/0C, SMT 0402 Vishay/Dale CRCW04021R00FKED
R2 100KΩResistor, 5%, ±100 ppm/0C, SMT 0402 Yageo RC0402JR-07100KL
R3 6.8KΩResistor, 1%, ±100 ppm/0C, SMT 0402 Yageo RC0402FR-076K8L
U1 MRF89XA Transceiver, Ultra Low-Power, Integrated
Sub-GHz
Microchip Technology MRF89XA-I/MQ
X1 12.8 MHz Crystal, ±10 ppm, 15 pF, ESR 100 ohms,
SMT 5 x 3.2mm
Abracon ABM3B-155-12.800MHz-T
MRF89XAM9A
DS75017A-page 12 Preliminary © 2011 Microchip Technology Inc.
2.2 Printed Circuit Board
The MRF89XAM9A module PCB is constructed with
high temperature FR4 material that is four layers and
0.032 inches thick. The layers are shown in Figure 2-3
through Figure 2-8. The PCB layer stack up is shown in
Figure 2-9
FIGURE 2-3: TOP SILK SCREEN
FIGURE 2-4: TOP COPPER
FIGURE 2-5: LAYER 2 — GROUND
PLANE
FIGURE 2-6: LAYER 3 — POWER
PLANE
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 13
MRF89XAM9A
FIGURE 2-7: BOTTOM COPPER FIGURE 2-8: BOTTOM SILK SCREEN
FIGURE 2-9: PCB LAYER STACK UP
Top Copper
Ground Plane
Power Plane
Bottom Copper
1/2 oz. Copper
1/2 oz. Copper
1/2 oz. Copper
1/2 oz. Copper
8 mil FR4
12 mil FR4
8 mil FR4
0.032”
±0.005”
MRF89XAM9A
DS75017A-page 14 Preliminary © 2011 Microchip Technology Inc.
2.3 PCB Antenna
The PCB antenna is fabricated on the top copper trace.
Figure 2-10 shows the PCB antenna dimensions. The
layers below the antenna have no copper traces. The
ground and power planes under the components serve
as a counterpoise to the PCB antenna. Additional
ground plane on the host PCB will substantially
enhance the performance of the module. For best
performance, place the module on the host PCB by
following the recommendations in Section 1.2,
Mounting Details.
The PCB antenna was designed and simulated using
Ansoft Designer® and HFSS™ 3D full-wave solver
software by ANSYS, Inc. (www.ansoft.com). The goal
of the design was to create a compact, low-cost
antenna with the best radiation pattern. Figure 2-11
shows the PCB antenna simulation drawing and
Figure 2-12 and Figure 2-13 show the simulated 2D
and 3D radiation patterns. As shown by the radiation
patterns, the performance of the antenna is dependant
upon the orientation of the module. Figure 2-14 shows
the impedance simulation and Figure 2-15 shows the
actual impedance measurement. The discrete
matching circuitry matches the impedance of the
antenna with the SAW filter and MRF89XA transceiver
IC.
FIGURE 2-10: PCB ANTENNA
DIMENSIONS
FIGURE 2-11: PCB ANTENNA SIMULATION DRAWING
16.8mm 1.0mm
8.4mm
1.1mm
0.5mm
2.5mm
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 15
MRF89XAM9A
FIGURE 2-12: SIMULATED 2D RADIATION PATTERN
FIGURE 2-13: SIMULATED 3D RADIATION PATTERN
MRF89XAM9A
DS75017A-page 16 Preliminary © 2011 Microchip Technology Inc.
FIGURE 2-14: SIMULATED PCB ANTENNA IMPEDANCE
FIGURE 2-15: MEASURED ANTENNA IMPEDANCE (915 MHZ BAND)
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 17
MRF89XAM9A
3.0 REGULATORY APPROVAL
The MRF89XAM9A module has received regulatory
approvals for modular devices in the United States and
Canada. Modular device approval allows the end user
to place the MRF89XAM9A module inside a finished
product and not require regulatory testing for an
intentional radiator (RF transmitter), provided no
changes or modifications are made to the module
circuitry. Changes or modifications could void the
user’s authority to operate the equipment. The end
user must comply with all of the instructions provided
by the Grantee, which indicate installation and/or
operating conditions necessary for compliance.
The integrator is still responsible for testing the end
product for any additional compliance requirements
required with this module installed (digital device
emission, PC peripheral requirements, etc.) in the
specific country that the end device will be marketed.
For more information on regulatory compliance, refer to
the specific country radio regulations in the following
sections.
3.1 United States
The MRF89XAM9A has received Federal
Communications Commission (FCC) CFR47
Telecommunications, Part 15 Subpart C “Intentional
Radiators” 15.247 and 15.249 and modular approval in
accordance with Part 15.212 Modular Transmitter
approval. The MRF89XAM9A module can be
integrated into a finished product without obtaining
subsequent and separate FCC certification.
The MRF89XAM9A module has been labeled with its
own FCC ID number, and if the FCC ID is not visible
when the module is installed inside another device,
then the outside of the finished product into which the
module is installed must also display a label referring
to the enclosed module. This exterior label can use
wording as following:
Requirements for product labeling are given in Part
15.19 Labelling Requirements.
The user’s manual should include the following
statement:
3.1.1 MRF89XAM9A SETTINGS
To meet the FCC requirements, the following settings
must be observed by the integrator:
3.1.1.1 FSK Modulation
The following settings configure the MRF89XAM9A for
wideband digital modulation techniques that conform to
the requirements of Part 15.247. These settings allow
higher radio frequency (RF) output power and greater
link budget:
Bit Rate Setting: 50 - 200 kbps
- Transmit Power Maximum Setting: 13 dBm
Bit Rate Setting: 2 - 40 kbps
- Transmit Power Maximum Setting: 7 dBm
Frequency Deviation Setting: 200 kHz
Data Whitening: On
Lower Frequency Setting: 902.800 MHz
Upper Frequency Setting: 926.500 MHz
Contains Transmitter Module FCC ID:
OA3MRF89XAM9A
-or-
Contains FCC ID: OA3MRF89XAM9A
This device complies with Part 15 of the FCC Rules.
Operation is subject to the following two conditions:
(1) this device may not cause harmful interference,
and (2) this device must accept any interference
received, including interference that may cause
undesired operation.
This equipment has been tested and found to comply
with the limits for a Class B digital device, pursuant to
part 15 of the FCC Rules. These limits are designed to
provide reasonable protection against harmful
interference in a residential installation. This
equipment generates, uses and can radiate radio
frequency energy, and if not installed and used in
accordance with the instructions, may cause harmful
interference to radio communications. However, there
is no guarantee that interference will not occur in a
particular installation. If this equipment does cause
harmful interference to radio or television reception,
which can be determined by turning the equipment
OFF and ON, the user is encouraged to try to correct
the interference by one or more of the following
measures:
Reorient or relocate the receiving antenna.
Increase the separation between the equipment
and receiver.
Connect the equipment into an outlet on a
circuit different from that to which the receiver is
connected.
Consult the dealer or an experienced radio/TV
technician for help.
MRF89XAM9A
DS75017A-page 18 Preliminary © 2011 Microchip Technology Inc.
3.1.1.2 OOK Modulation
The following settings configure the MRF89XAM9A for
narrowband operation that conform to the requirements
of the part 15.249. The part 15.249 requires a much
lower power setting than it is allowed in the part 15.247.
These settings are good for applications that require
lower transmit power current consumption and shorter
transmit distances:
Transmit Power Maximum Setting: 1 dBm
Bit Rate Maximum Setting: 28 kbps
Frequency Deviation Setting: 200 kHz
Lower Frequency Setting: 902.330 MHz
Upper Frequency Setting: 927.500 MHz
3.1.2 RF EXPOSURE
All transmitters regulated by FCC must comply with RF
exposure requirements. OET Bulletin 65 “Evaluating
Compliance with FCC Guidelines for Human Exposure
to Radio Frequency Electromagnetic Fields” provides
assistance in determining whether proposed or existing
transmitting facilities, operations or devices comply
with limits for human exposure to RF fields adopted by
the Federal Communications Commission (FCC). The
bulletin offers guidelines and suggestions for
evaluating compliance.
If appropriate, compliance with exposure guidelines for
mobile and unlicensed devices can be accomplished
by using warning labels and by providing informations
concerning minimum separation distances from
transmitting structures and proper installation of
antennas.
The following statement must be included as a
CAUTION statement in manuals and OEM products to
alert users of FCC RF Exposure compliance:
If the MRF89XAM9A module is used in a portable
application (antenna is less than 20 cm from persons
during operation), the integrator is responsible for
performing Specific Absorption Rate (SAR) testing in
accordance with FCC rules 2.1091.
3.1.3 HELPFUL WEB SITES
Federal Communications Commission (FCC) http://
www.fcc.gov
To satisfy FCC RF Exposure requirements for mobile
and base station transmission devices, a separation
distance of 20 cm or more should be maintained
between the antenna of this device and persons
during operation. To ensure compliance, operation at
closer than this distance is not recommended.
The antenna(s) used for this transmitter must not be
co-located or operating in conjunction with any other
antenna or transmitter.
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 19
MRF89XAM9A
3.2 Canada
The MRF89XAM9A module has been certified for use in
Canada under Industry Canada (IC) Radio Standards
Specification (RSS) RSS-210 and RSS-Gen. Modular
approval permits the installation of a module in a host
device without the need to recertify the device.
Labeling Requirements for the Host Device (from
Section 3.2.1, RSS-Gen, Issue 3, December 2010):
The host device must be labeled to identify the module
within the host device.
The Industry Canada certification label of a module
shall be clearly visible at all times when installed in the
host device, otherwise the host device must be labeled
to display the Industry Canada certification number of
the module, preceded by the words “Contains
transmitter module”, or the word “Contains”, or similar
wording expressing the same meaning, as follows:
User Manual Notice for License-Exempt Radio
Apparatus (from Section 7.1.3 RSS-Gen, Issue 3,
December 2010):
User manuals for license-exempt radio apparatus must
contain the following or equivalent notice in a
conspicuous location in the user manual or
alternatively on the device or both.
3.2.1 MRF89XAM9A SETTINGS
To meet Industry Canada (IC) requirements, the
following settings must be observed by the integrator:
3.2.1.1 FSK Modulation
The following settings configure the MRF89XAM9A for
wideband digital modulation techniques that conform to
the requirements of RSS-210 Issue 8, Annex 8. These
settings allow higher radio frequency (RF) output
power and greater link budget.
Bit Rate Setting: 50–200 kbps
- Transmit Power Maximum Setting: 13 dBm
Bit Rate Setting: 2–40 kbps
- Transmit Power Maximum Setting: 7 dBm
Frequency Deviation Setting: 200 kHz
Data Whitening: On
Lower Frequency Setting: 902.800 MHz
Upper Frequency Setting: 926.500 MHz
3.2.1.2 OOK Modulation
The following settings configure the MRF89XAM9A for
narrowband operation that conform to the requirements
of RSS-Gen Issue 3. RSS-Gen Issue 3 requires a
much lower power setting than is allowed in Part RSS-
210 Issue 8 Annex 8. These settings are good for
applications that require lower transmit power current
consumption and shorter transmit distances.
Transmit Power Maximum Setting: 1 dBm
Bit Rate Maximum Setting: 28 kbps
Frequency Deviation Setting: 200 kHz
Lower Frequency Setting: 902.330 MHz
Upper Frequency Setting: 927.500 MHz
3.2.2 HELPFUL WEB SITES
Industry Canada: http://www.ic.gc.ca/
Contains transmitter module IC: 7693A-89XAM9A
This device complies with Industry Canada license-
exempt RSS standard(s). Operation is subject to the
following two conditions: (1) this device may not
cause interference, and (2) this device must accept
any interference, including interference that may
cause undesired operation of the device.
Le présent appareil est conforme aux CNR
d'Industrie Canada applicables aux appareils radio
exempts de licence. L'exploitation est autorisée aux
deux conditions suivantes: (1) l'appareil ne doit pas
produire de brouillage, et (2) l'utilisateur de l'appareil
doit accepter tout brouillage radioélectrique subi,
même si le brouillage est susceptible d'en
compromettre le fonctionnement.
MRF89XAM9A
DS75017A-page 20 Preliminary © 2011 Microchip Technology Inc.
NOTES:
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 21
MRF89XAM9A
4.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Ambient temperature under bias.............................................................................................................. -40°C to +85°C
Storage temperature .............................................................................................................................. -55°C to +125°C
Voltage on VIN with respect to VSS ................................................................................................................ -0.3V to 6V
Voltage on any combined digital and analog pin with respect to VSS (except VIN) ...........................-0.3V to (VIN + 0.3V)
Input current into pin (except VIN and VSS)........................................................................................... -25 mA to 25 mA
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
MRF89XAM9A
DS75017A-page 22 Preliminary © 2011 Microchip Technology Inc.
TABLE 4-1: RECOMMENDED OPERATING CONDITIONS
TABLE 4-2: CURRENT CONSUMPTION
TABLE 4-3: DIGITAL I/O PIN INPUT SPECIFICATIONS(1)
Parameter Min Typ Max Unit Condition
Ambient Operating Temperature -40 +85 °C
Supply Voltage for RF, Analog and Digital Circuits 2.1 3.6 V
Supply Voltage for Digital I/O 2.1 3.6 V
Input High Voltage (VIH) 0.5 * VIN —VIN + 0.3 V
Input Low Voltage (VIL) -0.3V 0.2 * VIN V—
AC Peak Voltage on Open Collector Outputs (IO)(1) VIN – 1.5 VIN + 1.5 V
Note 1: At minimum, VIN – 1.5V should not be lower than 1.8V.
Symbol Chip Mode Min Typ Max Unit Condition
IDDSL Sleep 0.1 2 µA Sleep clock disabled, all blocks
disabled
IDDST Idle 65 80 µA Oscillator and baseband enabled
IDDFS Frequency Synthesizer 1.3 1.7 mA Frequency synthesizer running
IDDTX Tx
25
16
30
21
mA
mA
Output power = +10 dBm
Output power = +1 dBm(1)
IDDRX Rx 3.0 3.5 mA
Note 1: Guaranteed by design and characterization.
Symbol Characteristic Min Typ Max Unit Condition
VIL Input Low Voltage 0.2 * VIN V—
VIH Input High Voltage 0.8 * VIN ——V
IIL Input Low Leakage Current(2) -0.5 0.5 µA VIL = 0V
IIH Input High Leakage Current -0.5 0.5 µA VIH = VIN, VIN = 3.7
VOL Digital Low Output Voltage 0.1 * VIN —IOL = 1 mA
VOH Digital Low Output 0.9 * VIN ——V IOH = -1 mA
Note 1: Measurement Conditions: TA = 25°C, VIN = 3.3V, Crystal Frequency = 12.8 MHz, unless otherwise
specified.
2: Negative current is defined as the current sourced by the pin.
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 23
MRF89XAM9A
TABLE 4-4: PLL PARAMETERS AC CHARACTERISTICS(1)
Symbol Parameter Min Typ Max Unit Condition
FRO Frequency Ranges 902 928 MHz
BRFSK Bit Rate (FSK) 2 200 kbps NRZ
BROOK Bit Rate (OOK) 1.56 28 kbps NRZ
FDFSK Frequency Deviation (FSK) 33 200 kHz
FXTAL Crystal Oscillator Frequency 12.8 MHz
FSSTP Frequency Synthesizer Step 2 kHz Variable, depending on the
frequency
TSOSC Oscillator Wake-up Time 1.5 5 ms From Sleep mode(1)
TSFS Frequency Synthesizer Wake-
up Time; at most, 10 kHz
away from the target
500 800 µs From Stand-by mode
TSHOP Frequency Synthesizer Hop
Time; at most, 10 kHz away
from the target
180 µs 200 kHz step
200 µs 1 MHz step
250 µs 5 MHz step
260 µs 7 MHz step
290 µs 12 MHz step
320 µs 20 MHz step
340 µs 27 MHz step
Note 1: Guaranteed by design and characterization.
MRF89XAM9A
DS75017A-page 24 Preliminary © 2011 Microchip Technology Inc.
TABLE 4-5: RECEIVER AC CHARACTERISTICS(1)
Symbol Parameter Min Typ Max Unit Condition
RSF Sensitivity (FSK) -105 dBm 915 MHz, BR = 25 kbps,
fdev = 50 kHz, fc = 100 kHz
-101 dBm 915 MHz, BR = 66.7 kbps,
fdev = 100 kHz, fc = 200 kHz
RSO Sensitivity (OOK) -111 dBm 915 MHz, 2 kbps NRZ
fcfo = 50 kHz, fo = 50 kHz
-105 dBm 915 MHz, 16.7 kbps NRZ
fcfo = 100 kHz, fo = 100 kHz
CCR Co-Channel Rejection -12 dBc Modulation as wanted signal
ACR Adjacent Channel Rejection 27 dB Offset = 300 kHz, unwanted tone is
not modulated
52 dB Offset = 600 kHz, unwanted tone is
not modulated
57 dB Offset = 1.2 MHz, unwanted tone is
not modulated
BI Blocking Immunity -48 dBm Offset = 1 MHz, unmodulated
-37 dBm Offset = 2 MHz, unmodulated, no
SAW
-33 dBm Offset = 10 MHz, unmodulated, no
SAW
RXBWF Receiver Bandwidth in FSK
Mode(2) 50 250 kHz Single side BW, Polyphase Off
RXBWU Receiver Bandwidth in OOK
Mode(2) 50 400 kHz Single side BW, Polyphase On
ITP3 Input Third Order Intercept
Point
-28 dBm Interferers at 1 MHz and 1.950 MHz
offset
TSRWF Receiver Wake-up Time 280 500 µs From FS to Rx ready
TSRWS Receiver Wake-up Time 600 900 µs From Stand-by to Rx ready
TSRHOP Receiver Hop Time from Rx
Ready to Rx Ready with a
Frequency Hop
400 µs 200 kHz step
400 µs 1 MHz step
460 µs 5 MHz step
480 µs 7 MHz step
520 µs 12 MHz step
550 µs 20 MHz step
600 µs 27 MHz step
RSSIST RSSI Sampling Time 1/fdev s From Rx ready
RSSTDR RSSI Dynamic Range 70 dB Ranging from sensitivity
Note 1: Guaranteed by design and characterization.
2: This reflects the whole receiver bandwidth, as described by conditions for active and passive filters.
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 25
MRF89XAM9A
TABLE 4-6: TR ANSMITTER AC CHAR ACTERISTICS (1)
4.1 Timing Specification and Diagram
TABLE 4-7: SPI TIMING SPECIFICATION(1,2)
Symbol Description Min Typ Max Unit Condition
RFOP RF Output Power, Programmable
with 8 Steps of typ. 3 dB
+12.5 dBm Maximum power setting
-8.5 dBm Minimum power setting
PN Phase Noise -112 dBc/Hz Measured with a 600 kHz
offset at the transmitter output
TXSP Transmitted Spurious -47 dBc At any offset between 200 kHz
and 600 kHz, unmodulated
carrier, fdev = 50 kHz
Tx2 Second Harmonic
——-40dBm
No modulation, see Note(2)
Tx3 Third Harmonic
Tx4 Fourth Harmonic
Txn Harmonics above Tx4
FSKDEV FSK Deviation ±33 ±55 ±200 kHz Programmable
TSTWF Transmitter Wake-up Time 120 500 µs From FS to Tx ready
TSTWS Transmitter Wake-up Time 600 900 µs From Stand-by to Tx ready
Note 1: Guaranteed by design and characterization.
2: Transmitter in-circuit performance with SAW filter and crystal.
Parameter Min Typ Max Unit Condition
SPI Configure Clock Frequency 6 MHz
SPI Data Clock Frequency 1 MHz
Data Hold and Setup Time 2 µs
SDI Setup Time for SPI Configure 250 ns
SDI Setup Time for SPI Data 312 ns
CSCON Low to SCK Rising Edge;
SCK Falling Edge to CSCON High
500 ns
CSDATA Low to SCK Rising Edge;
SCK Falling Edge to CSDATA High
625 ns
CSCON Rising to Falling Edge 500 ns
CSDATA Rising to Falling Edge 625 ns
Note 1: Typical Values: TA = 25°C, VIN = 3.3V, Crystal Frequency = 12.8 MHz, unless otherwise specified.
2: Negative current is defined as the current sourced by the pin.
MRF89XAM9A
DS75017A-page 26 Preliminary © 2011 Microchip Technology Inc.
NOTES:
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 27
MRF89XAM9A
APPENDIX A: REVISION HISTORY
Revision A (July 2011)
This is the Initial release of the document.
MRF89XAM9A
DS75017A-page 28 Preliminary © 2011 Microchip Technology Inc.
NOTES:
© 2011 Microchip Technology Inc. Preliminary DS75017A-page 29
MRF89XAM9A
THE MICROCHIP WEB SITE
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Technical support is available through the web site
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MRF89XAM9A
DS75017A-page 30 Preliminary © 2011 Microchip Technology Inc.
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DS75017AMRF89XAM9A
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
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© 2011 Microchip Technology Inc. Preliminary DS75017A-page 31
MRF89XAM9A
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, for example, on pricing or delivery, refer to the factory or the listed sales office.
Device MRF89XAM9A-I/RM: Ultra Low-Power, Integrated ISM Band Sub-GHz
Transceiver module
Temperature
Range
I = -40ºC to +85ºC (Industrial)
Example:
a) MRF89XAM9A-I/RM: Industrial temperature
tray.
b) MRF89XAM9AT-I/RM: Industrial temperature
tape and reel,
DS75017A-page 32 © 2011 Microchip Technology Inc.
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