BSV 236SP OptiMOS-P Small-Signal-Transistor Feature Product Summary * P-Channel VDS -20 V * Enhancement mode RDS(on) 175 m * Super Logic Level (2.5 V rated) ID -1.5 A * 150C operating temperature PG-SOT-363 4 * Avalanche rated 5 6 * dv/dt rated 2 3 1 * Qualified according to AEC Q101 VPS05604 * Halogen-free according to IEC61249-2-21 Type Package Tape and Reel inf Marking BSV 236SP PG-SOT-363 H6327:3000pcs/r. X2s Drain pin 1,2, 5,6 Gate pin 3 Source pin 4 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25C -1.5 TA=70C -1.2 ID puls -6 EAS 9.5 mJ dv/dt -6 kV/s Gate source voltage VGS 12 V Power dissipation Ptot 0.56 W -55... +150 C Pulsed drain current TA=25C Avalanche energy, single pulse ID =-1.5 A , VDD =-10V, RGS =25 Reverse diode dv/dt IS =-1.5A, VDS =-16V, di/dt=200A/s, Tjmax =150C TA=25C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Rev 1.4 55/150/56 Page 1 2011-07-14 BSV 236SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 90 - - 220 - - 110 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250A Gate threshold voltage, VGS = VDS ID =-8A Zero gate voltage drain current A IDSS VDS =-20V, VGS =0, Tj =25C - -0.1 -1 VDS =-20V, VGS =0, Tj =150C - -10 -100 IGSS - -10 -100 nA RDS(on) - 193 285 m RDS(on) - 131 175 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-0.8A Drain-source on-state resistance VGS =-4.5, ID =-1.5A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air; t 10 sec. Rev 1.4 Page 2 2011-07-14 BSV 236SP Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 2.2 4.4 - S pF Dynamic Characteristics Transconductance gfs cVDS c2*cIDc*RDS(on)max ID =-1.2A Input capacitance Ciss VGS =0, VDS =-15V, - 228 - Output capacitance Coss f=1MHz - 92 - Reverse transfer capacitance Crss - 75 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 5.7 8.5 Rise time tr ID =-1A, RG=6 - 8.5 12.7 Turn-off delay time td(off) - 14.1 21.1 Fall time tf - 12.2 18.3 - -0.4 -0.6 - -1.8 -2.7 - -3.8 -5.7 V(plateau) VDD =-10V, ID =-1.5A - -1.6 - IS - - - - -6 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-10V, ID =-1.5A VDD =-10V, ID =-1.5A, nC VGS =0 to -4.5V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25C -0.11 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - 0.88 1.3 V Reverse recovery time trr VR =-10V, |IF | = |lD |, - 16.4 20.5 ns Reverse recovery charge Qrr diF /dt=100A/s - 3.4 4.3 nC Rev 1.4 Page 3 2011-07-14 BSV 236SP 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | 4.5 V 1.3 BSV 236SP -1.6 BSV 236SP W A 1.1 1 -1.2 ID Ptot 0.9 0.8 -1 0.7 -0.8 0.6 0.5 -0.6 0.4 -0.4 0.3 0.2 -0.2 0.1 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 C parameter : D = tp /T 10 2 D 1 BSV 236SP DS /I tp = 45.0s BSV 236SP K/W V 100 s on ) = A 160 TA 3 Safe operating area -10 C R DS ( 10 1 Z thJS 1 ms ID -10 0 10 0 10 ms D = 0.50 10 -10 -1 0.20 -1 0.10 0.05 10 -2 single pulse 0.02 0.01 DC -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS Rev 1.4 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2011-07-14 BSV 236SP 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25C RDS(on) = f (ID ) parameter: tp = 80 s parameter: VGS 0.5 12 Vgs = -3.4V Vgs = -2V A RDS(on) Vgs = -3V 8 - ID Vgs = - 2.4V Vgs= - 2.6V Vgs = - 3V Vgs= - 3.4V Vgs = - 3.8V Vgs = - 4.5V Vgs= - 5V Vgs = - 6V Vgs = -3.8V Vgs = -4.5V Vgs = -6V 0.3 Vgs = -2.6V 6 0.2 Vgs = -2.4V 4 Vgs = -2V 0.1 2 Vgs = -1.8V 0 0 1 2 3 4 5 6 7 8 V 0 0 10 2 4 6 8 11 A - ID - V DS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS | 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25C parameter: tp = 80 s parameter: tp = 80 s 5 8 A S 4 6 g fs - ID 3.5 3 2.5 5 4 2 3 1.5 2 1 1 0.5 0 0 Rev 1.4 0.25 0.5 0.75 1 1.25 1.5 1.75 2 V 2.5 - V GS Page 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 A 5 - ID 2011-07-14 BSV 236SP 9 Drain-source on-resistance 10 Gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -1.5 A, VGS = -4.5 V parameter: VGS = VDS , ID = -8 A 240 1.4 V - VGS(th) RDS(on) m 200 180 98% 160 98% 1 0.8 typ. 140 0.6 typ. 120 2% 0.4 100 80 -60 -20 20 60 100 0.2 -60 C 160 Tj -20 20 60 100 C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 s 10 3 -10 1 BSV 236SP A pF Ciss C IF -10 0 Coss 10 2 Crss -10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 20 V - VDS Rev 1.4 Page 6 -10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD 2011-07-14 BSV 236SP 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -1.5 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 parameter: ID = -1.5 A pulsed 10 12 V mJ 10 8 - VGS E AS 9 7 6 8 7 0.2 VDS max. 0.5 VDS max. 5 6 0.8 VDS max. 4 5 4 3 3 2 2 1 1 0 25 50 75 100 150 C Tj 0 0 1 2 3 4 5 6 8 nC |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSV 236SP V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 C 180 Tj Rev 1.4 Page 7 2011-07-14 BSV 236SP Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 Page 1 2011-07-14