H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5
May 2012
H11F1M, H11F2M, H11F3M
Photo FET Optocouplers
Features
As a remote variable resistor:
■
≤
100
Ω
to
≥
300M
Ω
■
≤
15pF shunt capacitance
■
≥
100G
Ω
I/O isolation resistance
As an analog switch:
■
Extremely low offset voltage
■
60 V
pk-pk
signal capability
■
No charge injection or latch-up
■
UL recognized (File #E90700)
Applications
As a remote variable resistor:
■
Isolated variable attenuator
■
Automatic gain control
■
Active filter fine tuning/band switching
As an analog switch:
■
Isolated sample and hold circuit
■
Multiplexed, optically isolated A/D conversion
General Description
The H11FXM series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electri-
cally isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
level AC and DC analog signals. The H11FXM series
devices are mounted in dual in-line packages.
Schematic Package Outlines
1
2
6
5
4
OUTPUT
TERM.
OUTPUT
TERM.
ANODE
CATHODE
3
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 2
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Device Value
Units
TOTAL DEVICE
T
STG
Storage Temperature All -40 to +150
°C
T
OPR
Operating Temperature All -40 to +100
°C
T
SOL
Lead Solder Temperature All 260 for 10 sec
°C
EMITTER
I
F
Continuous Forward Current All 60
mA
V
R
Reverse Voltage All 5
V
I
F(pk)
Forward Current – Peak (10µs pulse, 1% duty cycle) All 1
A
P
D
LED Power Dissipation 25°C Ambient All 100
mW
Derate Linearly from 25°C 1.33
mW/°C
DETECTOR
P
D
Detector Power Dissipation @ 25°C All 300
mW
Derate linearly from 25°C 4.0
mW/°C
BV
4-6
Breakdown Voltage (either polarity) H11F1M,
H11F2M
±30 V
H11F3M ±15 V
I
4-6
Continuous Detector Current (either polarity) All ±100 mA
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 3
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*All Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 16mA All 1.3 1.75 V
I
R
Reverse Leakage Current V
R
= 5V All 10 µA
C
J
Capacitance V = 0 V, f = 1.0MHz All 50 pF
OUTPUT DETECTOR
BV
4-6
Breakdown Voltage
Either Polarity
I
4-6
= 10µA, I
F
= 0 H11F1M, H11F2M 30 V
H11F3M 15
I
4-6
Off-State Dark Current V
4-6
= 15 V, I
F
= 0 All 50 nA
V
4-6
= 15 V, I
F
= 0,
T
A
= 100°C
All 50 µA
R
4-6
Off-State Resistance V
4-6
= 15 V, I
F
= 0 All 300 M
Ω
C
4-6
Capacitance V
4-6
= 15 V, I
F
= 0,
f = 1MHz
All 15 pF
Symbol Characteristics Test Conditions Device Min Typ* Max Units
DC CHARACTERISTICS
R
4-6
On-State Resistance I
F
= 16mA,
I
4-6
= 100µA
H11F1M 200
Ω
H11F2M 330
H11F3M 470
R
6-4
On-State Resistance I
F
= 16mA,
I
6-4
= 100µA
H11F1M 200
Ω
H11F2M 330
H11F3M 470
Resistance, non-linearity
and assymetry
I
F
= 16mA,
I
4-6
= 25µA RMS,
f = 1kHz
All 2 %
AC CHARACTERISTICS
t
on
Turn-On Time R
L
= 50
Ω
, I
F
= 16mA,
V
4-6
= 5V
All 45 µs
t
off
Turn-Off Time R
L
= 50
Ω
, I
F
= 16mA,
V
4-6
= 5V
All 45 µs
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units
V
ISO
Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V
AC
PEAK
R
ISO
Isolation Resistance V
I-O
= 500 VDC All 10
11
Ω
C
ISO
Isolation Capacitance f = 1MHz All 0.2 pF
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 4
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
PR
Input to Output Test Voltage, Method b, V
IORM
x 1.875
= V
PR
, 100% Production Test with tm = 1 sec, Partial
Discharge < 5pC
1594 V
peak
Input to Output Test Voltage, Method a, V
IORM
x 1.5 =
V
PR
, Type and Sample Test with tm = 60 sec, Partial
Discharge < 5pC
1275 V
peak
V
IORM
Max. Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over Voltage 6000 V
peak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, V
IO
= 500V 10
9
Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 5
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Typical Performance Curves
10000
1000
100
10
1
0204060
TA – AMBIENT TEMPERATURE (°C)
Figure 4. Off-state Current vs. Ambient Temperature
I46 – NORMALIZED DARK CURRENT
80 100
NORMALIZED TO:
V46 = 15V
IF = 0mA
TA = 25°C
800
600
400
200
0
-200
-400
-600
-800
-0.2 -0.1 0.0
IF = 2mA IF = 2mA
IF = 6mA
IF = 6mA
IF = 10mA
IF = 10mA
IF = 14mA
IF = 14mA
IF = 18mA
IF = 18mA
0.1 0.2
V46 – OUTPUT VOLTAGE (V)
I46 – OUTPUT CURRENT (μA)
Figure 2. Output Characteristics
10
1 1 0 100
IF – INPUT CURRENT (mA)
r(on) – NORMALIZED RESISTANCE
Figure 1. Resistance vs. Input Current
1
0.1
Normalized to:
IF = 16mA
I46 = 5μA RMS
Figure 3. LED Forward Voltage vs. Forward Current
2.0
1.8
1.6
1.4
1.2
1.0
0.1 101 100
IF – LED FOR WARD CURRENT (mA)
VF – FOR WARD VOLTAGE (V)
0.8
TA = -40°C
TA = 25°C
TA = 100°°C
5
3
2
1
1 50 100 150 200 250 300 350
V
4-6
– D.C. BIAS VOLTAGE (mV)
r(on) – CHANGE IN RESISTANCE (%)
Figure 5. Resistive Non-Linearity vs. D.C. Bias
4
0
I
4-6
= 10μA RMS
r(on) = 200Ω
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 6
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Typical Applications
As a Variable Resistor As an Analog Signal Switch
ISOLATED VARIABLE ATTENUATORS
Distortion free attenuation of low level A.C. signals is accom-
plished by varying the IRED current, IF Note the wide dynamic
range and absence of coupling capacitors; D.C. level shifting or
parasitic feedback to the controlling function.
ISOLATED SAMPLE AND HOLD CIRCUIT
Accuracy and range are improved over conventional FET
switches because the H11FXM has no charge injection from
the control signal. The H11FXM also provides switching of
either polarity input signal up to 30V magnitude..
AUTOMATIC GAIN CONTROL
This simple circuit provides over 70db of stable gain control for
an AGC signal range of from 0 to 30mA. This basic circuit can
be used to provide programmable fade and attack for electronic
music.
MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION
The optical isolation, linearity and low offset voltage of the
H11FXM allows the remote multiplexing of low level analog signals
from such transducers as thermocouplers, Hall effect devices,
strain gauges, etc. to a single A/D converter.
ACTIVE FILTER FINE TUNING/BAND SWITCHING
The linearity of resistance and the low offset voltage of the
H11FXM allows the remote tuning or band-switching of active
filters without switching glitches or distortion. This schematic
illustrates the concept, with current to the H11F1M IRED’s
controlling the filter’s transfer characteristic.
TEST EQUIPMENT - KELVIN CONTACT POLARITY
In many test equipment designs the auto polarity function uses
reed relay contacts to switch the Kelvin Contact polarity. These
reeds are normally one of the highest maintenance cost items
due to sticking contacts and mechanical problems. The totally
solid-State H11FXM eliminates these troubles while providing
faster switching.
500K
VIN VOUT VIN VOUT
500K
50
IF
H11F1M
IF
H11F1M
LOW FREQUENCY HIGH FREQUENCY
DYNAMIC RANGE 70db
FOR 0 ≤ IF ≤ 30mA
@10KHz DYNAMIC RANGE 50db
FOR 0 ≤ IF ≤ 30mA
@1MHz
VIN VOUT
IF
VIN
VOUT
IF
t
H11F1M
C
+
-
VIN VOUT
IF
H11F1M
AGC
SIGNAL
500K
+
-
V1
CALL V1
V2
Vn
H11F1M
MSB MSB
CALL
Vn
DATA
INPUT
H11F1M
LSB
LSB
H74A1
H74A1
A/D
CONVERTER
PROCESS
CONTROL
LOGIC
SYSTEM
DATA
ACQUISITION
IF1 ADJUSTS f1, IF2 ADJUSTS f2
IF1
A2 A3
A1
H11F1M
IF2
H11F1M IF
AC
H11F1M
IF
H11F1M
IF
ITEST
BD
H11F1M IFH11F1M
DEVICE
UNDER
TEST
PARAMETER
SENSING
BOARD
IF TO
A & B FOR
POLARITY 1
C & D FOR
POLARITY 2
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 7
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 8
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Ordering Information
Marking Information
Option
Order Entry Identifier
(Example) Description
No option H11F1M Standard Through Hole Device
S H11F1SM Surface Mount Lead Bend
SR2 H11F1SR2M Surface Mount; Tape and Reel
V H11F1VM IEC60747-5-2 approval
TV H11F1TVM IEC60747-5-2 approval, 0.4" Lead Spacing
SV H11F1SVM IEC60747-5-2 approval, Surface Mount
SR2V H11F1SR2VM IEC60747-5-2 approval, Surface Mount, Tape and Reel
H11F1
V X YY Q
1
2
6
43 5
Definitions
1 Fairchild logo
2 Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘7’
5 Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 9
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Carrier Tape Specification
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 10
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (tL to tP) 3°C/second max.
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsm a x
Tsm i n
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Rev. 1.0.5 11
H11F1M, H11F2M, H11F3M — Photo FET Optocouplers
