MBR4045WT SWITCHMODETM Power Rectifier Features and Benefits * * * * * * Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Pb-Free Package is Available* http://onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 45 VOLTS Applications * Power Supply - Output Rectification * Power Management * Instrumentation 1 2, 4 3 Mechanical Characteristics * * * * * * Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C 1 2 TO-247AC CASE 340L STYLE 2 3 MARKING DIAGRAM MBR4045WT AYWWG MBR4045WT A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION Device *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2010 March, 2010 - Rev. 8 1 MBR4045WT MBR4045WTG Package Shipping TO-247 30 Units/Rail TO-247 (Pb-Free) 30 Units/Rail Publication Order Number: MBR4045WT/D MBR4045WT MAXIMUM RATINGS Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 45 V Average Rectified Forward Current Per Diode (Rated VR, TC = 125C) Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90C) Per Diode IFRM 40 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 400 A Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg -65 to +175 C Operating Junction Temperature (Note 1) A 20 40 TJ -65 to +175 C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 C Voltage Rate of Change dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, Junction-to-Case Min. Pad RqJC 1.4 C/W Maximum Thermal Resistance, Junction-to-Ambient Min. Pad RqJA 50.1 C/W Min Typical Max Unit - - - - 0.52 0.47 0.65 0.63 0.70 0.60 0.80 0.75 - - 0.09 7.5 1.0 50 ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) @ IF = 20 Amps, TJ = 25C @ IF = 20 Amps, TJ = 125C @ IF = 40 Amps, TJ = 25C @ IF = 40 Amps, TJ = 125C VF Instantaneous Reverse Current (Note 2) @ Rated DC Voltage, TJ = 25C @ Rated DC Voltage, TJ = 100C IR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 V mA MBR4045WT TYPICAL ELECTRICAL CHARACTERISTICS 100 I R, REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 10 TC = 150C 1 TC = 100C 100 TC = 150C 10 TC = 100C 1 0.1 TC = 25C TC = 25C 200 300 400 500 600 700 vF, INSTANTANEOUS FORWARD VOLTAGE (mV) 0.01 800 0 C, CAPACITANCE (pF) 10000 1000 100 1 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 Figure 2. Typical Reverse Current I F(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage 10 10 VR, REVERSE VOLTAGE (VOLTS) 100 30 25 20 15 DC SQUARE WAVE (VR = 45 V) 10 5 0 100 Figure 3. Typical Capacitance Per Leg 110 120 130 140 TC, CASE TEMPERATURE (C) 150 Figure 4. Current Derating Per Leg http://onsemi.com 3 160 MBR4045WT PACKAGE DIMENSIONS TO-247 CASE 340L-02 ISSUE E -T- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C -B- E U N L 4 A -Q- 1 2 0.63 (0.025) 3 M T B M P -Y- K F 2 PL W J H G D 3 PL 0.25 (0.010) M Y Q DIM A B C D E F G H J K L N P Q U W MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 STYLE 2: PIN 1. 2. 3. 4. S INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 ANODE CATHODE (S) ANODE 2 CATHODES (S) SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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