Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
•Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
•Straight Lead Version in Plastic Sleeves (“–1” Suffix)
•Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix)
•Surface Mount Replacements for 2N6040–2N6045 Series,
TIP120–TIP122 Series, and TIP125–TIP127 Series
•Monolithic Construction With Built–in Base–Emitter Shunt Resistors
•High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 A dc
•Complementary Pairs Simplifies Designs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
MJD122
MJD127
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IC
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
8
16
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
120
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
20
0.16
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation* @ TA = 25C
Derate above 25C
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.75
0.014
ÎÎÎ
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎ
ÎÎÎÎ
RθJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
6.25
ÎÎÎ
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient*
ÎÎÎÎ
ÎÎÎÎ
RθJA
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
71.4
ÎÎÎ
ÎÎÎ
C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 5 1Publication Order Number:
MJD122/D
MJD122
MJD127
CASE 369A–13
SILICON
POWER TRANSISTORS
8 AMPERES
100 VOLTS
20 WATTS
*ON Semiconductor Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
*
NPN
PNP *
0.243
6.172
0.063
1.6
0.118
3.0
0.100
2.54 0.165
4.191
0.190
4.826
inches
mm
MJD122 MJD127
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎÎ
ÎÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage
(IC = 30 mAdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
100
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
10
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
10
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎÎÎ
ÎÎÎÎÎ
2
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 8 Adc, VCE = 4 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
1000
100
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
12,000
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 4 Adc, IB = 16 mAdc)
(IC = 8 Adc, IB = 80 mAdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
2
4
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage (1)
(IC = 8 Adc, IB = 80 mAdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
4.5
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
(IC = 4 Adc, VCE = 4 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
2.8
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain–Bandwidth Product
(IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
|hfe|
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
4
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD127
MJD122
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Cob
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
300
200
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain
(IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hfe
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
300
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Figure 1. Power Derating
25
25
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
TA
SURFACE
MOUNT
TC
MJD122 MJD127
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3
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
hFE, DC CURRENT GAIN
0.1 0.7
3000
0.5 1
20,000
1000
23 5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 7352
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
0.2 30.1 0.70.3 1 5
10 20 30
200
300
0.3 7 10
0.7
0.5 7
21
0
PNP MJD127 NPN MJD122
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
hFE, DC CURRENT GAIN
VCE = 4 V
TJ = 150°C
7000
0.1 0.7
25°C
-55°C
3000
0.5 1
20,000
700
1000
23 5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3 0.5 1 735
4 A
IC = 2 A
2
TJ = 25°C
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
V, VOLTAGE (VOLTS)
3
2.5
1
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4 V
VCE(sat) @ IC/IB = 250
0.2 30.1 0.70.3 1 5
10 20 30
Figure 2. DC Current Gain
Figure 3. Collector Saturation Region
Figure 4. “On” Voltages
200
300
0.3 7 10
0.7
0.5 7
210
6 A
VCE = 4 V
TJ = 150°C
25°C
-55°C
TJ = 25°C
4 A
IC = 2 A 6 A
TJ = 25°C
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TYPICAL ELECTRICAL CHARACTERISTICS
MJD122 MJD127
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4
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
IC, COLLECTOR CURRENT (AMP)
0.2
*IC/IB ≤ hFE/3
0.1
-55°C to 25°C
123 10
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10-1
0+0.4
, COLLECTOR CURRENT (A)µIC
103
102
101
100
-0.2 -0.4 -0.6
TJ = 150°C
100°C
REVERSE FORWARD
25°C
VCE = 30 V
105
+0.6 +0.2 -0.8 -1 -1.2 -1.4
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10-1
, COLLECTOR CURRENT (A)µIC
103
102
101
100
105
+5
-5
θVB for VBE 25°C to 150°C
θVC for VCE(sat)
Figure 5. Temperature Coefficients
VR, REVERSE VOLTAGE (VOLTS)
Cib
30 1 5 20 100
TJ = 25°C
300
50
70
100
0.1 2 10 50
PNP
NPN
0.50.2
Figure 6. Collector Cut–Off Region
Figure 7. Small–Signal Current Gain
1
f, FREQUENCY (kHz)
100
210
500
5000
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
3000
55020 100
10,000
200
300
200 500 1000
PNP MJD127 NPN MJD122
-4
-3
-2
-1
0
+4
+3
+2
+1
0.50.3 75
IC, COLLECTOR CURRENT (AMP)
0.20.1 1 2 30.50.3 75
2000
1000
10
50
20
30 PNP
NPN
200
Figure 8. Capacitance
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+5
-5
-4
-3
-2
-1
0
+4
+3
+2
+1
0.7 10
0-0.4 +0.2 +0.4 +0.6-0.6 -0.2 +0.8 +1 +1.2 +1.4
hfe , SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
-55°C to 25°C
25°C to 150°C
*IC/IB ≤ hFE/3
25°C to 150°C
-55°C to 25°C
25°C to 150°C
-55°C to 25°C
*θVC for VCE(sat)
θVB for VBE
REVERSE FORWARD
VCE = 30 V
TJ = 150°C
100°C
25°C
Cob
TYPICAL ELECTRICAL CHARACTERISTICS
MJD122 MJD127
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5
t, TIME OR PULSE WIDTH (ms)
1
0.01 1000
0.3
0.2
0.07
r(t), EFFECTIVE TRANSIENT
RθJC(t) = r(t) RθJC
RθJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
THERMAL RESISTANCE (NORMALIZED)
0.7
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1 0.5 30.3
0.2 0.7 1
5
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
t, TIME (s)µ
3
2
0.7
0.5
0.3
0.2
ts
tf
tr
td @ VBE(off) = 0 V
PNP
NPN
Figure 9. Switching Times Test Circuit Figure 10. Switching Times
0.1
1
10752
Figure 11. Thermal Response
V2
APPROX
+8 V
0≈ 8 k
SCOPE
VCC
-30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25 µs
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
+ 4 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V1
APPROX
-12 V
TUT
RB
D1≈ 120
0.07
0.05
0.1
0.01
IC, COLLECTOR CURRENT (AMP)
5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2 BONDING WIRE LIMIT
THERMAL LIMIT
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
10 507
TJ = 150°C
100µ
s
1ms
dc
0.1
1
3
15
20
3020 70
CURVES APPLY BELOW RATED VCEO
5ms
Figure 12. Maximum Forward Bias
Safe Operating rea
321
10
0.05
0.02
0.03
500µ
s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on T J(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150C. TJ(pk) may be calculated from the data in
Figure 11. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
MJD122 MJD127
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6
Figure 13. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈8 k ≈120
PNP
BASE
EMITTER
COLLECTOR
≈8 k ≈120
NPN
MJD122 MJD127
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7
PACKAGE DIMENSIONS
CASE 369A–13
ISSUE AA
DPAK
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
–T– SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.250 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.033 0.040 0.84 1.01
F0.037 0.047 0.94 1.19
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.175 0.215 4.45 5.46
S0.020 0.050 0.51 1.27
U0.020 --- 0.51 ---
V0.030 0.050 0.77 1.27
Z0.138 --- 3.51 ---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
MJD122 MJD127
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8
PACKAGE DIMENSIONS
CASE 369–07
ISSUE M
DPAK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
V
S
A
K
–T–
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.250 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.033 0.040 0.84 1.01
F0.037 0.047 0.94 1.19
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.175 0.215 4.45 5.46
S0.050 0.090 1.27 2.28
V0.030 0.050 0.77 1.27
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