DPG 60 C 300 PC V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 PC Backside: cathode Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: TO-263 (D2Pak) Conditions rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved typ. max. Unit 300 V VR = 300 V 1 A VR = 300 V TVJ = 150 C 0.1 mA TVJ = 25 C 1.35 V 1.66 V 1.08 V 1.43 V TC = 140C 30 A TVJ = 175C 0.70 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A rectangular TVJ = 150 C d = 0.5 for power loss calculation only R thJC t rr min. TVJ = 25 C TVJ = 25 C -55 11.1 m 0.85 K/W 175 C TC = 25 C 175 W t = 10 ms (50 Hz), sine TVJ = 45C 360 A TVJ = 25 C 3 A IF = TVJ = 125C 7 A 30 A; VR = 200 V -di F /dt = 200 A/s VR = 150 V; f = 1 MHz TVJ = 25 C 35 ns TVJ = 125C 55 ns TVJ = 25 C 50 pF Data according to IEC 60747and per diode unless otherwise specified 20100114b DPG 60 C 300 PC Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin typ. 1) 1) Unit 35 0.25 -55 Weight FC max. A K/W 150 2 20 mounting force with clip C g 60 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part No. Logo Part number D P G 60 C 300 PC XXXXXXXXX IXYS yww = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-263AB (D2Pak) (2) Date Code Order Code abcd Ordering Standard Part Name DPG 60 C 300 PC Similar Part DPG60C300HB DPG60C300QB DPG60C300HJ DPF60C300HB DPG80C300HB IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Marking on Product DPG60C300PC Package TO-247AD (3) TO-3P (3) ISOPLUS247 (3) TO-247AD (3) TO-247AD (3) Delivering Mode Tape & Reel Base Qty Code Key 800 503494 Voltage Class 300 300 300 300 300 Data according to IEC 60747and per diode unless otherwise specified 20100114b DPG 60 C 300 PC Outlines TO-263 (D2Pak) Dim. A A1 Millimeter Inches min max min max 4.06 4.83 0.160 0.190 typ. 0.10 typ. 0.004 b 0.51 0.99 0.020 0.039 b2 1.14 1.40 0.045 0.055 c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.029 D 8.38 9.40 0.330 0.370 D1 8.00 8.89 0.315 0.350 E 9.65 10.41 0.380 0.410 E1 6.22 8.20 0.245 0.323 e 2,54 BSC 0,100 BSC H 14.61 15.88 0.575 L 1.78 2.79 0.070 0.625 0.110 L1 1.02 1.68 0.040 0.066 L2 1.02 1.52 0.040 0.060 typ. typ. 0.040 0.0016 0.02 0.0008 All dimensions conform with and/or are within JEDEC standard. W IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100114b DPG 60 C 300 PC 16 80 0.4 IF = 60 A 30 A 15 A 70 60 14 12 0.3 50 IF [A] 10 Qrr TVJ = 150C IRM [C] 40 IF = 60 A 30 A 15 A 8 [A] 0.2 6 30 20 25C TVJ = 125C VR = 200 V 10 0.0 0.4 0.8 1.2 VF [V] 1.6 0 2.0 TVJ = 125C VR = 200 V 4 0.1 200 400 2 600 0 200 Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF versus forward voltage VF 1.4 600 Fig. 3 Typ. reverse recovery current IRM versus -diF /dt 600 70 TVJ = 125C VR = 200 V 1.2 400 -diF /dt [A/s] -diF /dt [A/s] 12 VFR tfr 500 10 400 8 tfr 300 [ns] 6 200 4 60 1.0 50 trr [ns] Kf 0.8 0.6 IF = 60 A 30 A 40 15 A IRM 30 0.4 Qrr 0.2 0 20 40 80 120 160 0 0 TVJ [C] Fig. 4 Dynamic parameters Qrr, IRM versus T VJ 200 400 -diF /dt [A/s] 600 0 200 400 -diF /dt [A/s] 2 0 600 Fig. 6 Typ. forward recovery voltage VFR Fig. 5 Typ. reverse recovery time trr versus -diF /dt 16 TVJ = 125C VR = 200 V IF = 30 A 100 VFR [V] & forward recovery time tfr vs. diF /dt 1 TVJ = 125C 14 VR = 200 V 12 IF = 15 A 10 Erec 8 [J] ZthJC 30 A 60 A [K/W] 6 Rthi [K/W] 0.139 0.176 0.305 0.23 4 2 0 200 400 -diF /dt [A/s] 600 0.1 0.00 1 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved 0.01 0.1 t [s] 1 ti [s] 0.00028 0.0033 0.028 0.17 10 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified 20100114b