© 2006 IXYS All rights reserved 1 - 2
DGS 3-030AS
0645
IXYS reserve the right to change limits, conditions and dimensions.
Type Marking on product Circuit Package
DGS 3-030AS 3A300AS
A = Anode, C = Cathode , TAB = Cathode
A
TO-252 AA
A
C (TAB)
Gallium Arsenide Schottky Rectifier
Features
• Low forward voltage
• Very high switching speed
• Low junction capacity of GaAs
- low reverse current peak at turn off
• Soft turn off
• Temperature independent switching
behaviour
• High temperature operation capability
• Epoxy meets UL 94V-0
Applications
• MHz switched mode power supplies
(SMPS)
• Small size SMPs
• High frequency converters
• Resonant converters
Symbol Conditions Maximum Ratings
VRRM/RSM 300 V
IFAV TC = 25°C; DC 5 A
IFAV TC = 90°C; DC 3.5 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz); sine 10 A
TVJ -55...+175 °C
Tstg -55...+150 °C
Ptot TC = 25°C 18 W
IFAV =5A
VRRM = 300 V
CJunction = 3.7 pF
Symbol Conditions Characteristic Values
typ. max.
IR ①VR = VRRM;T
VJ = 25°C 0.7 mA
VR = VRRM;T
VJ = 125°C 0.7 mA
VFIF = 2 A; TVJ = 125°C 1.6 V
IF = 2 A; TVJ = 25°C 1.6 2 V
CJVR = 150 V; TVJ = 125°C 3.7 pF
RthJC 8.5 K/W
Weight 0.3 g
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0%
Data according to DIN/IEC 747 and per diode unless otherwise specified
AC
© 2006 IXYS All rights reserved 2 - 2
DGS 3-030AS
0645
IXYS reserve the right to change limits, conditions and dimensions.
TO-252 AA
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
1 Anode
2 NC
3 Anode
4 Cathode
0,0 0,5 1,0 1,5 2,0 2,5
0,01
0,1
1
10
0,00001 0,0001 0,001 0,01 0,1 1 10
0,01
0,1
1
10
t
s
K/W
0,1 1 10 100 1000
1
10
100
CJ
IF
A
VFVR
V
pF
V
ZthJC
TVJ = 125°C
Single Pulse
TVJ =
125°C
25°C
DGS 4-03AS
Fig. 1typ. forward characteristics Fig. 2 typ. junction capacity
versus blocking voltage
Fig. 3 typ. thermal impedance junction to case
