waar MP35005/WMP3510/W VISHAY Vishay Lite-On Power Semiconductor 35A Bridge Rectifier Features Diffused junction Low reverse leakage current Surge overload rating to 400A peak Low power loss, high efficiency Case to terminal isolation voltage 2500V UL Listed under recognized component index, file number E95060 14.454 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage MP35005/W | Varm 50 Vv =Working peak reverse voltage MP3501/W | =Vawa 100 Vv =DC Blocking voltage MP3502/W =VpR 200 V MP3505/W 400 Vv MP3506/W 600 Vv MP3508/W 800 Vv MP3510/W 1000 Vv Peak forward surge current lesm 400 A Average forward current Te=55C lFay 35 A Junction and storage temperature range Ti=Tstg | -65...4125 | C Electrical Characteristics Tj = 25C Forward voltage 17.5A DC Ve 1.1 Vv Reverse current Tce=25C IR 10 uA Tce=100C IR 0.5 mA I@t Rating for fusing 4 664 | As Diode capacitance VR=4V, f=1MHz Cp 400 pF Thermal resistance junction to case | mounted on heatsink Rthuc 3.8 KW Rev. A2, 24-Jun-98 1 (4)MP35005/WMP3510/W Vishay Lite-On Power Semiconductor VISHAY Characteristics (Tj = 25C unless otherwise specified) 50 < o 40 5 Oo CD 5 30 = 5 uw 20 D w g - 10 z - 0 Resistive or inductive load 25 50 75 100 125 150 15733 Tamb Ambient Temperature ( C ) Figure 1. Max. Average Forward Current vs. Ambient Temperature 1000 < = 100 5 Oo QZ w 5 uw 10 I Ju Tj = 25C 1.0 0.2 0.6 10 14 1.8 15734 Ve Forward Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage 400 TT < [II] t=s00 * | [TI < NQ Single Half Sine-Wave 2 (JEDEC Method) 6 300 ENG 2 MN a B INQ BR 200 o N = N N LL NN x NN % 100 ao Is tp = 0 1.0 10 100 18735 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 10 < = =e 1.0 5 oO oO 9 oO & mc 01 I o 0.01 0 40 80 120 15736 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Rev. A2, 24-Jun-98waar MP35005/WMP3510/W VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm A C H MP (AC) MP/MP-W _ of yb Dim Min Max ~ A 28.40 28.10 B 10.97 11.23 C)]} (AC) c {70 | 16.70 G E 22.86 25.40 H G 13.50 14.50 TT H | Hole for#10 screw rH $5.08 Nominal a) La J [17.50 18.50 | 2 4 K 10.90 11.90 L 00.97 61.07 M 30.50 - N 10.97 11.23 P H P 17.60 18.60 AUL Dimensions in mm MP-W (AC) (+) Oo oe L| =< W'" Suffix Designates Wire Leads No Suffix Designates Faston Terminals (-) (AC) = i =| 4 | + technical drawings t_____ according to UIN specifications 14480 _ |. L Case: molded plastic with heatsink internally mounted in the bridge encapsulation Terminals: plated leads solderable per MIL-STD-202, method 208 Polarity: symbols marked on case Approx. weight: MP 24 grams, MP-W 21 grams Mounting: through hole for #10 screw Mounting torque: 8.0 inlbs maximum Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)MP35005/W-MP3510/W Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98