KSC2331YSHTA - Fairchild

KSC2331 — NPN Epitaxial Silicon Transistor

KSC2331 Rev. B0 1

December 2011

KSC2331

NPN Epitaxial Silicon Transistor

Features

• Low Frequency Amplifier & Medium Speed Switching

• Complement to KSA931

• High Collector-Base Voltage : VCBO=80V

• Collector Current : IC=700mA

• Collector Dissipation : PC=1W

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Electrical Characteristics Ta = 25°C unless otherwise noted

hFE Classification

Symbol Parameter Value Units

VCBO Collector-Base Voltage 80 V

VCEO Collector-Emitter Vo ltage 60 V

VEBO Emitter-Base Voltage 8 V

ICCollector Current 700 mA

PCCollector Power Dissipation 1 W

TJJunction Temperature 150 °C

TSTG Sto ra ge Temperature -55 to 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCBO Collector-Base Breakdown Voltage IC=100μA, IE=0 80 V

BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V

BVEBO Emitter-Base Breakdown Voltage IE=10μA, IC=0 8 V

ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 μA

IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 μA

hFE DC Current Gain VCE=2V, IC=50mA 40 240

VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0.7 V

VBE (sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.20 V

Classification R O Y

hFE 40 ~ 80 70 ~ 140 120 ~ 240

TO-92L

1. Emitter 2. Collector 3. Base

KSC2331 — NPN Epitaxial Silicon Transistor

KSC2331 Rev. B0 2

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Em itter Saturation Volta ge

Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Safe Operatin g Area Figure 6. Power De ra tin g

0 5 10 15 20 25 30 35 40 45 50 55

100

120

140

160

180

200

IB = 1.2mA

IB = 0.2mA

IB = 1.4mA

IB = 1.0mA

IB = 0.8mA

IB = 0.6m A

IB = 0.4m A

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

1 10 100 1000

120

160

200

240

VCE = 2V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

1 10 100 1000

0.01

0.1

IC = 10 IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2

100

1000

VCE = 2V

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

1 10 100 1000

100

1000

10000

1. Ta = 25oC

2. *Single Pulse

*200ms

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

PC[W], POW ER DISSIPATION

Ta[oC], AMIBIE NT T EMPE RATURE

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