MOTOROLA Order this document by T2500/D SEMICONDUCTOR TECHNICAL DATA T2500 Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. * Blocking Voltage to 800 Volts * All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability * Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability TRIACs 6 AMPERES RMS 200 thru 800 VOLTS MT2 MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating Symbol Repetitive Peak Off-State Voltage(1) (TJ = -40 to +100C, Gate Open) VDRM T2500 B D M N On-State Current RMS (Full Cycle Sine Wave 50 to 60 Hz) (TC = +80C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +80C, Pulse Width = 1 s) Average Gate Power (TC = +80C, t = 8.3 ms) Peak Gate Trigger Current (Pulse Width = 10 s) Operating Junction Temperature Range Storage Temperature Range Value Unit Volts 200 400 600 800 IT(RMS) 6 Amps ITSM 60 Amps I2t 15 A2s PGM 16 Watts PG(AV) 0.2 Watt IGTM 4 Amps TJ -40 to +100 C Tstg -40 to +150 C 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC 2.7 C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Peak Blocking Current (Rated VDRM, Gate Open,TJ = 100C) IDRM -- -- 2 mA Maximum On-State Voltage (Either Direction)* (IT = 30 A Peak) VTM -- -- 2 Volts Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) IGT Gate Trigger Voltage (Continuous dc) (All Quadrants) (VD = 12 Vdc, RL = 12 Ohms) (VD = VDROM, RL = 125 Ohms, TC = 100C) VGT mA -- -- -- -- 10 20 15 30 25 60 25 60 -- 0.2 1.25 -- 2.5 -- Volts Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 150 mA) IH -- 15 30 mA Gate Controlled Turn-On Time (Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 s) tgt -- 1.6 -- s Critical Rate-of-Rise of Commutation Voltage (Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms, Gate Unenergized, TC = 80C) dv/dt(c) -- 10 -- V/s Critical Rate-of-Rise of Off-State Voltage (Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100C) T2500B T2500D,M,N *Pulse Test: Pulse Width dv/dt V/s -- -- p 300 s, Duty Cycle p 2%. 100 75 -- -- QUADRANT DEFINITIONS MT2(+) QUADRANT II QUADRANT I MT2(+), G(-) MT2(+), G(+) ELECTRICAL CHARACTERISTICS of RECOMMENDED BIDIRECTIONAL SWITCHES G(-) G(+) QUADRANT III QUADRANT IV MT2(-), G(-) MT2(-), G(+) MT2(-) USAGE General PART NUMBER MBS4991 MBS4992 VS 6.0 - 10 V 7.5 - 9.0 V IS 350 A Max 120 A Max VS1 - VS2 0.5 V Max 0.2 V Max Temperature Coefficient 0.02%/C Typ See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches. 2 Motorola Thyristor Device Data PACKAGE DIMENSIONS -T- B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 Q A 1 2 3 STYLE 4: PIN 1. 2. 3. 4. U H MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 K Z R L V J G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 CASE 221A-04 (TO-220AB) Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola Thyristor Device Data *T2500/D* T2500/D