1
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Thyristors
... designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Repetitive Peak Off-State Voltage(1)
(TJ = –40 to +100°C, Gate Open) T2500 B
D
M
N
VDRM
200
400
600
800
Volts
On-State Current RMS (TC = +80°C)
(Full Cycle Sine Wave 50 to 60 Hz) IT(RMS) 6 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C) ITSM 60 Amps
Circuit Fusing Considerations
(t = 8.3 ms) I2t 15 A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 1 µs) PGM 16 Watts
Average Gate Power
(TC = +80°C, t = 8.3 ms) PG(AV) 0.2 Watt
Peak Gate Trigger Current (Pulse Width = 10 µs) IGTM 4 Amps
Operating Junction Temperature Range TJ–40 to +100 °C
Storage Temperature Range Tstg –40 to +150 °C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Order this document
by T2500/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
T2500
Series
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
6 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
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2 Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.7 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current
(Rated VDRM, Gate Open,TJ = 100°C) IDRM 2 mA
Maximum On-State Voltage (Either Direction)*
(IT = 30 A Peak) VTM 2 Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 12 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
10
20
15
30
25
60
25
60
mA
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 12 Ohms)
(VD = VDROM, RL = 125 Ohms, TC = 100°C)
VGT
0.2 1.25
2.5
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 150 mA)
IH 15 30 mA
Gate Controlled Turn-On Time
(Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 µs) tgt 1.6 µs
Critical Rate-of-Rise of Commutation Voltage
(Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c) 10 V/µs
Critical Rate-of-Rise of Off-State Voltage
(Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100°C) T2500B
T2500D,M,N
dv/dt
100
75
V/µs
*Pulse Test: Pulse Width
p
300 µs, Duty Cycle
p
2%.
QUADRANT DEFINITIONS
QUADRANT II QUADRANT I
QUADRANT III QUADRANT IV
MT2(+)
MT2()
MT2(+), G() MT2(+), G(+)
MT2(), G() MT2(), G(+)
G() G(+)
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
USAGE General
PART NUMBER MBS4991 MBS4992
VS6.0 – 10 V 7.5 – 9.0 V
IS350 µA Max 120 µA Max
VS1 – VS2 0.5 V Max 0.2 V Max
Temperature
Coefficient 0.02%/°C Typ
See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches.
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3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221A-04
(TO–220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.055 1.15 1.39
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 ––– 1.15 –––
Z––– 0.080 ––– 2.04
A
K
L
V
GD
N
Z
H
Q
FB
1 2 3
4
–T–
SEATING
PLANE
S
R
J
U
TC
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4 Motorola Thyristor Device Data
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T2500/D
*T2500/D*