16RIA100MPBF - Vishay Presicion Group

MEDIUM POWER THYRISTORS Stud Version

16RIA SERIES

16A

Bulletin I2404 rev. A 07/00

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16RIA

10 to 120 140 to 160

IT(AV) 16 16 A

@ TC85 85 °C

IT(RMS) 35 35 A

ITSM @

50Hz 340 225 A

@ 60Hz 360 235 A

I2t@

50Hz 574 255 A2s

@ 60Hz 524 235 A2s

VDRM/VRRM 100 to 1200 1400 to 1600 V

tqtypical 110 µs

TJ- 65 to 125 °C

Parameters Units

Typical Applications

Medium power switching

Phase control applications

Can be supplied to meet stringent military,

aerospace and other high-reliability requirements

Major Ratings and Characteristics

Case Style

TO-208AA (TO-48)

Features

Improved glass passivation for high reliability

and exceptional stability at high temperature

High di/dt and dv/dt capabilities

Standard package

Low thermal resistance

Metric threads version available

Types up to 1600V VDRM/ VRRM

16RIA Series

Bulletin I2404 rev. A 07/00

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Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.

Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ TJ = TJ max.

VVmA

10 100 150 20

20 200 300

40 400 500

60 600 700

16RIA 80 800 900 10

100 1000 1100

120 1200 1300

140 1400 1500

160 1600 1700

IT(AV) Max. average on-state current 16 16 A 180° sinusoidal conduction

@ Case temperature 85 85 °C

IT(RMS) Max. RMS on-state current 35 35 A

ITSM Max. peak, one-cycle 340 225 A t = 10ms No voltage

non-repetitive surge current 360 235 t = 8.3ms reapplied

285 190 t = 10ms 100% VRRM

300 200 t = 8.3ms reapplied Sinusoidal half wave,

I2t Maximum I2t for fusing 574 255 A2s t = 10ms No voltage Initial TJ = TJ max.

524 235 t = 8.3ms reapplied

405 180 t = 10ms 100% VRRM

375 165 t = 8.3ms reapplied

I2√t Maximum I2√t for fusing 5740 2550 A2√s t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.

VT(TO)1 Low level value of threshold 0.97 1.14 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.

voltage

VT(TO)2High level value of threshold 1.24 1.31 (I > π x IT(AV)), TJ = TJ max.

voltage

rt1 Low level value of on-state 17.9 14.83 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.

slope resistance

rt2 High level value of on-state 13.6 12.03 (I > π x IT(AV)), TJ = TJ max.

slope resistance

VTM Max. on-state voltage 1.75 --- V Ipk= 50 A, TJ = 25°C

--- 1.80

IHMaximum holding current 130 mA TJ = 25°C. Anode supply 6V, resistive load,

ILLatching current 200

16RIA

10 to 120 140 to 160

Parameter Units Conditions

ELECTRICAL SPECIFICATIONS

Voltage Ratings

On-state Conduction

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs

(2) For voltage pulses with tp ≤ 5ms

16RIA Series

Bulletin I2404 rev. A 07/00

www.irf.com

dv/dt Max. critical rate of rise of 100 TJ = TJ max. linear to 100% rated VDRM

off-state voltage 300 (*) TJ = TJ max. linear to 67% rated VDRM

V/µs

Parameter 16RIA Units Conditions

Blocking

PGM Maximum peak gate power 8.0 TJ = TJ max.

PG(AV) Maximum average gate power 2.0

IGM Max. peak positive gate current 1.5 A TJ = TJ max.

-VGM Maximum peak negative 10 V TJ = TJ max.

gate voltage

IGT DC gate current required 90 TJ = - 65°C

to trigger 60 mA TJ = 25°C

35 TJ = 125°C

VGT DC gate voltage required 3.0 TJ = - 65°C

to trigger 2.0 V TJ = 25°C

1.0 V TJ = 125°C

IGD DC gate current not to trigger 2.0 mA TJ = TJ max., VDRM = rated value

VGD DC gate voltage not to trigger 0.2 V TJ = TJ max.

VDRM = rated value

Max. required gate trigger current/

voltage are the lowest value which

will trigger all units 6V anode-to-

cathode applied

Max. gate current/ voltage not to

trigger is the max. value which

will not trigger any unit with rated

VDRM anode-to-cathode applied

Parameter 16RIA Units Conditions

Triggering

di/dt Max. rate of rise of turned-on TJ = TJ max., VDM = rated VDRM

current VDRM ≤ 600V 20 0 A/µs Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max.

VDRM ≤ 800V 180 ITM = (2x rated di/dt) A

VDRM ≤ 1000V 160

VDRM ≤ 1600V 150

tgt Typical turn-on time 0.9 TJ = 25°C,

at = rated VDRM/VRRM, TJ = 125°C

trr Typical reverse recovery time 4 µs TJ = TJ max.,

ITM = IT(AV), tp > 200µs, di/dt = -10A/µs

tqTypical turn-off time 110 TJ = TJ max., ITM = IT(AV), tp > 200µs, VR = 100V,

di/dt = -10A/µs, dv/dt = 20V/µs linear to

67% VDRM, gate bias 0V-100W

Parameter 16RIA Units Conditions

Switching

(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 16RIA160S90.

(*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request.

16RIA Series

Bulletin I2404 rev. A 07/00

4www.irf.com

TJMax. operating temperature range - 65 to 125 ° C

Tstg Max. storage temperature range - 65 to 125 °C

RthJC Max. thermal resistance, 0.86 K/W DC operation

junction to case

RthCS Max. thermal resistance, 0.35 K/W Mounting surface, smooth, flat and greased

case to heatsink

T Mounting torque to nut to device

20(27.5) 25 lbf-in Lubricated threads

0.23(0.32) 0.29 kgf.m (Non-lubricated threads)

2.3(3.1) 2.8 Nm

Case style TO-208AA (TO-48) See Outline Table

Parameter 16RIA Units Conditions

Thermal and Mechanical Specification

∆RthJC Conduction

(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)

180° 0.21 0.15 K/W TJ = TJ max.

120° 0.25 0.25

90° 0.31 0.34

60° 0.45 0.47

30° 0.76 0.76

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

Ordering Information Table

16 RIA 160 M S90

Device Code

1- Current code

2- Essential part number

3- Voltage code: Code x 10 = VRRM (See Voltage Rating Table)

4- None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A

M = Stud base TO-208AA (TO-48) M6 X 1

5- Critical dv/dt: None = 300V/µs (Standard value)

S90 = 1000V/µs (Special selection)

wt Approximate weight 14 (0.49) g (oz)

16RIA Series

Bulletin I2404 rev. A 07/00

www.irf.com

Outline Table

Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic

Case Style TO-208AA (TO-48)

All dimensions in millimeters (inches)

100

110

120

130

0 5 10 15 20 25

30° 60°

90°

120°

180°

Average On-state Current (A)

Ma xi mum Al lowable Cas e Temperatur e (°C)

Conduction Angle

16RIA Series (100 to 1200V)

R (DC) = 1.15 K/W

thJC

100

110

120

130

0 10203040

30°

60°

90°

120°

180°

Average On-state Current (A)

Maxi mum Allowable Case Temperature (°C)

Conduction Period

16RIA Series (100 to 1200V)

R (DC) = 1.15 K/W

thJC

16RIA Series

Bulletin I2404 rev. A 07/00

6www.irf.com

Fig. 3 - On-state Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 4 - On-state Power Loss Characteristics

0255075100125

Maximum Allowable Ambient Temperature (°C)

4 K

3 K/W

K/W

R = 0.1 K

- Delta R

thSA

10 K

7 K/W

5 K/W

0 5 10 15 20 25

RMS Limit

Conduction Angle

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

180°

120°

90°

60°

30°

16RIA Series

(100 to 1200V)

T = 125°C

0255075100125

Maxi mum Al l owabl e Ambi ent Temperature (°C)

4 K/W

3 K/W

2 K

= 0.1 K

- Delta R

thS

10 K/W

7 K

5 K

0 4 8 1216202428

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

16RIA Series

(100 to 1200V)

T = 125°C

140

160

180

200

220

240

260

280

300

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Peak Half Sine Wave On-state Current (A)

16RIA Series

(100 to 1200V)

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

125

150

175

200

225

250

275

300

325

350

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

16RIA Series

(100 to 1200V)

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

16RIA Series

Bulletin I2404 rev. A 07/00

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Fig. 7 - Forward Voltage Drop Characteristics

Fig. 9 - Current Ratings Characteristics

Fig. 8 - Current Ratings Characteristics

Fig. 10 - On-state Power Loss Characteristics

100

1000

0.511.522.533.

T = 25°C

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

16RIA Series

(100 to 1200V)

T = 125°C

100

110

120

130

024681012141618

30° 60° 90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Angle

16RIA Series (1400 to 1600V)

R (DC) = 1.15 K/W

thJC

100

110

120

130

0 5 10 15 20 25 30

30°

60°

90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Period

16RIA Series (1400 to 1600V)

R (DC) = 1.15 K/W

thJC

0255075100125

Maximum Allowable Ambient Temperature (°C)

= 0.5 K

- Delta R

1 K/W

.5 K/W

2.5 K/W

K/W

.5 K/W

K/W

10 K

thS

0 5 10 15 20

RMS Limit

Conduction Angle

Maxi mum Average On-state Power Loss (W)

Average On-state Current (A)

180°

120°

90°

60°

30°

16RIA Series

(1400 to 1600V)

T = 125°C

16RIA Series

Bulletin I2404 rev. A 07/00

8www.irf.com

Fig. 12 - Maximum Non-Repetitive Surge Current Fig. 13 - Maximum Non-Repetitive Surge Current

Fig. 14 - Forward Voltage Drop Characteristics

Fig. 11 - On-state Power Loss Characteristics

0255075100125

Maximum Allowable Ambient Temperature (°C)

2 K/W

1 K/W

1.5 K/W

3.5 K/W

2.5 K

5 K

7 K/W

10 K/W

= 0.5 K

- D

elta

thSA

0 4 8 1216202428

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

16RIA Series

(1400 to 1600V)

T = 125°C

100

120

140

160

180

200

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Peak Half Sine Wave On-state Current (A)

16RIA Series

(1400 to 1600V)

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

100

125

150

175

200

225

250

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

16RIA Series

(1400 to 1600V)

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

100

1000

0.511.522.533.544.55

T = 25°C

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V)

T = 125°C

16RIA Series

(1400 to 1600V)

16RIA Series

Bulletin I2404 rev. A 07/00

www.irf.com

Fig. 15 - Thermal Impedance ZthJC Characteristics

Fig. 16 - Gate Characteristics

0.01

0.1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Steady State Value

R = 1.15 K/W

(DC Operation)

thJC

Transient Thermal Impedance Z (K/W)

16RIA Series

0.1

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

(1) (2)

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

a) Recommended load line for

b) Recommended load line for

Rectangular gate pulse

tr<=1 µs, tp >= 6 µs

rated di/dt : 10V, 20ohms

<=30% rated di/dt : 10V, 65ohms

(1) PGM = 16W, tp = 4ms

(2) PGM = 30W, tp = 2ms

(3) PGM = 60W, tp = 1ms

(4) PGM = 60W, tp = 1ms

tr <=0.5 µs, tp >= 6 µs

(3) (4)

Tj = -65 °C

Tj = 25 °C

Tj = 125 °C

16RIA Series Frequency Limited by PG(AV)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.

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http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.