RMWL26001 21-26.5 GHz Low Noise Amplifier MMIC General Description Features The RMWL26001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Low Noise Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF Components amplifiers, multipliers and mixers it forms part of a complete 26 GHz transmit/receive chipset. The RMWL26001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of low noise amplifier applications. * 4 mil substrate * Small-signal gain 21dB (typ.) * 2.9dB noise figure (typ.) * Chip size 3.0mm x 1.25mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC Tstg Rjc Parameter Positive DC voltage (+4V Typical) Negative DC voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) (c)2004 Fairchild Semiconductor Corporation Ratings +6 -2 8 100 +8 -30 to +85 -55 to +125 170 Units V V V mA dBm C C C/W RMWL26001 Rev. D RMWL26001 June 2004 Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain at Pin = -15dBm (21-24GHz) Gain at Pin = -15dBm (21-26.5GHz) GainVariation vs Freq. (21-26.5GHz) Gain at 1 dBm Compression (21-26.5GHz) Power Output at 1dB Compression Drain Current at Pin = -15dBm Drain Current at 1dB Compression Input Return Loss (Pin = -15dBm) Output Return Loss (Pin = -15dBm) Noise Figure OIP3 Min 21 20 20 Typ 0.5 22 21 2.8 20 10 65 80 12 12 2.9 22 Max 26.5 26 26 4.0 Units GHz V dB dB dB dB dBm mA mA dB dB dB dBm Note: 1: Typical range of negative gate voltage is -0.8 to -0.2 V to set typical Idq of 65 mA Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material. DRAIN DRAIN SUPPLY SUPPLY Vd1 Vd2 DRAIN SUPPLY Vd3 DRAIN SUPPLY Vd4 MMIC CHIP RF IN RF OUT GROUND (Back of the Chip) GATE SUPPLY Vg Figure 1. Functional Block Diagram (c)2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D RMWL26001 Electrical Characteristics (At 25C), 50 system, Vd = +4V, Quiescent current (Idg) = 65 mA 1.870 RMWL26001 0.621 0.0 2.721 2.223 0.600 0.451 0.0 0.0 1.154 0.301 2.690 1.701 Dimensions in mm Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 3.0mm x 1.25mm x 100m. Back of chip is RF and DC Ground) DRAIN SUPPLY Vd = +4V L = BOND WIRE INDUCTANCE L 10,000pF L 100pF 10,000pF L 100pF L L L L L L 100pF 100pF L MMIC CHIP RF IN RF OUT L L L GROUND (Back of Chip) 100pF 100pF 100pF L L GATE SUPPLY Vg Figure 3. Recommended Application Schematic Circuit Diagram (c)2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D RMWL26001 Vdd (POSITIVE) 10,000pF 10,000pF DIE-ATTACH 80Au/20Sn 100pF 100pF 100pF 100pF 5 MIL THICK ALUMINA 50 5 MIL THICK ALUMINA 50 RF OUTPUT RF INPUT 100pF 2 MIL GAP 100pF L < 0.015" (4 Places) Vg (NEGATIVE) Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Figure 4. Recommended Assembly Diagram Recommended Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 65mA. The following sequence of steps must be followed to properly test the amplifier: Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate frequency band. Step 1: Turn off RF input power. Step 6: Follow turn-off sequence of: Step 2: Connect the DC supply grounds to the grounds of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). Step 3: Slowly apply positive drain bias supply voltage of +4V to Vd. (c)2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D RMWL26001 Typical Characteristics RMWL26001 26GHz Low Noise Amplifier, Typical Performance On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V 25 0 -5 15 -10 S 21 (dB) 20 S 11 10 -15 S 11S 22 (dB) S 21 S 22 5 -20 0 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 -25 26.5 FREQUENCY (GHz) RMWL26001 26GHz Low Noise Amplifier, Typical Performance On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V 25 0 S 11 -5 15 -10 S 21 (dB ) 20 S 22 10 -15 5 -20 0 S 11 S 22 (dB ) S 21 -25 0 5 10 15 20 25 30 FREQUENCY (GHz) (c)2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D RMWL26001 Typical Characteristics (Continued) RMWL26001 26GHz Low Noise Amplifier, Typical Noise Figure On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V 4 3.9 3.8 NOISE FIGURE (dB) 3.7 3.6 3.5 3.4 3.3 3.2 3.1 3 2.9 2.8 2.7 2.6 2.5 20.5 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 FREQUENCY (GHz) RMWL26001 26GHz Low Noise Amplifier, Typical Performance On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V 12 26 25 OUTPUT POWER 11.5 24 11.25 23 11 22 GAIN (P1dB) 10.75 21 10.5 20 10.25 19 10 18 9.75 17 9.5 16 9.25 15 9 14 8.75 13 8.5 12 8.25 11 8 GAIN AT P1dB (dBm) OUTPUT POWER AT P1dB (dBm) 11.75 10 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 27 FREQUENCY (GHz) (c)2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D RMWL26001 Typical Characteristics (Continued) RMWL26001 26GHz Low Noise Amplifier, Typical Performance On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V 25 0 -5 15 -10 S 21 (d B) 20 S 11 10 -15 S 11 S 22 (dB ) S 21 S 22 5 -20 0 -25 18 19 (c)2004 Fairchild Semiconductor Corporation 20 21 22 23 2 25 26 27 28 29 30 RMWL26001 Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11