©2004 Fairchild Semiconductor Corporation
June 2004
RMWL26001 Rev. D
RMWL26001
RMWL26001
21–26.5 GHz Low Noise Amplifier MMIC
General Description
The RMWL26001 is a 4-stage GaAs MMIC amplifier
designed as a 21 to 26.5 GHz Low Noise Amplifier for use
in point to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild RF Components amplifiers, multipliers and mixers
it forms part of a complete 26 GHz transmit/receive chipset.
The RMWL26001 utilizes our 0.25µm power PHEMT
process and is sufficiently versatile to serve in a variety of
low noise amplifier applications.
Features
•4 mil substrate
• Small-signal gain 21dB (typ.)
• 2.9dB noise figure (typ.)
• Chip size 3.0mm x 1.25mm
Absolute Ratings
Symbol Parameter Ratings Units
Vd Positive DC voltage (+4V Typical) +6 V
Vg Negative DC voltage -2 V
Vdg Simultaneous (Vd–Vg) 8 V
I
D
Positive DC Current 100 mA
P
IN
RF Input Power (from 50
Ω
source) +8 dBm
T
C
Operating Baseplate Temperature -30 to +85 °C
T
stg
Storage Temperature Range -55 to +125 °C
R
jc
Thermal Resistance (Channel to Backside) 170 °C/W
Device
©2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D
RMWL26001
Electrical Characteristics
(At 25°C), 50
Ω
system, Vd = +4V, Quiescent current (Idg) = 65 mA
Note:
1:
Typical range of negative gate voltage is -0.8 to -0.2 V to set typical Idq of 65 mA
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with
gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT
devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges
through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for
appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap
between the chip and the substrate material.
Figure 1. Functional Block Diagram
Parameter Min Typ Max Units
Frequency Range 21 26.5 GHz
Gate Supply Voltage
1
(Vg) 0.5 V
Gain at Pin = -15dBm (21–24GHz) 20 22 26 dB
Gain at Pin = -15dBm (21–26.5GHz) 20 21 26 dB
GainVariation vs Freq. (21–26.5GHz) 2.8 dB
Gain at 1 dBm Compression (21–26.5GHz) 20 dB
Power Output at 1dB Compression 10 dBm
Drain Current at Pin = -15dBm 65 mA
Drain Current at 1dB Compression 80 mA
Input Return Loss (Pin = -15dBm) 12 dB
Output Return Loss (Pin = -15dBm) 12 dB
Noise Figure 2.9 4.0 dB
OIP3 22 dBm
DRAIN
SUPPLY
Vd1
DRAIN
SUPPLY
Vd3
DRAIN
SUPPLY
Vd4
DRAIN
SUPPLY
Vd2
MMIC CHIP
RF OUT
RF IN
GROUND
(Back of the Chip) GATE SUPPLY
Vg
©2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D
RMWL26001
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 3.0mm x 1.25mm x 100µm. Back of chip is RF and DC Ground)
Figure 3. Recommended Application Schematic Circuit Diagram
0.0 0.621 1.870 2.223 2.721
0.451
0.301 1.154 1.701 2.690
0.600
0.0
0.0
Dimensions in mm
DRAIN SUPPLY
Vd = +4V
GROUND
(Back of Chip)
GATE SUPPLY
Vg
L = BOND WIRE INDUCTANCE
L
L
L
L
MMIC CHIP
RF IN RF OUT
L
L
L
L
L
L
L
100pF
100pF
100pF 100pF 100pF 100pF
10,000pF10,000pF
100pF
L
L
L
L
©2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D
RMWL26001
Figure 4. Recommended Assembly Diagram
5 MIL THICK
ALUMINA
50Ω
5 MIL THICK
ALUMINA
50Ω
DIE-ATTACH
80Au/20Sn
Vdd (POSITIVE)
Vg (NEGATIVE)
2 MIL GAP
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
L < 0.015"
(4 Places)
RF OUTPUT
RF INPUT
10,000pF 10,000pF
100pF
100pF
100pF
100pF
100pF
100pF
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE
DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier:
Step 1:
Turn off RF input power.
Step 2:
Connect the DC supply grounds to the grounds of
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Step 3:
Slowly apply positive drain bias supply voltage of
+4V to Vd.
Step 4:
Adjust gate bias voltage to set the quiescent
current of Idq = 65mA.
Step 5:
After the bias condition is established, RF input
signal may now be applied at the appropriate frequency
band.
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
©2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D
RMWL26001
Typical Characteristics
0
5
10
15
20
25
21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5
FREQUENCY (GHz)
FREQUENCY (GHz)
S21
(dB)
-25
-20
-15
-10
-5
0
S11
S22 (dB)
S21
S11
S22
0
5
10
15
20
25
05101520 25 30
S
21
(dB)
-25
-20
-15
-10
-5
0
S
11
S
22
(dB)
S21
S11
S22
RMWL26001 26GHz Low Noise Amplifier, Typical Performance
On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V
RMWL26001 26GHz Low Noise Amplifier, Typical Performance
On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V
©2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D
RMWL26001
Typical Characteristics
(Continued)
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
20.5 21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5
21 21.5 22 22.5 23 23.5 24 24.5 25 25.5 26 26.5 27
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
10.25
10.5
10.75
11
11.25
11.5
11.75
12
OUTPUT POWER AT P1dB (dBm) NOISE FIGURE (dB)
GAIN AT P1dB (dBm)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
FREQUENCY (GHz)
FREQUENCY (GHz)
RMWL26001 26GHz Low Noise Amplifier, Typical Performance
On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V
RMWL26001 26GHz Low Noise Amplifier, Typical Noise Figure
On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V
OUTPUT POWER
GAIN (P1dB)
©2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D
RMWL26001
Typical Characteristics
(Continued)
0
5
10
15
20
25
18 19 20 21 22 23 2 25 26 27 28 29 30
S
21
(dB)
-25
-20
-15
-10
-5
0
S
11
S
22
(dB)
S21
S11
S22
RMWL26001 26GHz Low Noise Amplifier, Typical Performance
On-Wafer Measurements, IDQ = 65mA, VDD = 4.0V
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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