© by SEMIKRON 000913 1
I:\Marketin\FRAMEDAT\datbl\Treiber\SKHI22a.fm
SKHI 21 A, SKHI 22 A / B
Absolute Ma ximum Ratings
Symbol Term Values Units
VS
ViH
IoutPEAK
IoutAVmax
fmax
VCE
Supply voltage prim.
Input signal volt. (High) SKHIxxA
SKHI22B
Output pea k curre nt
Output av erag e curre nt
max. switching frequency
Collector emitter voltage sense across the
IGBT
18
VS + 0,3
5 + 0,3
8
40
100
1700
V
V
V
A
mA
kHz
V
dv/dt
VisolIO
Visol12
RGonmin
RGoffmin
Qout/pulse
Top
Tstg
Rate of rise and fall of voltage secondary
to primary side
Isolati on tes t volta ge Standard
input-output (1 min.AC) Version „H4"
Isolation test voltage ouput 1 - output 2
(1 min.AC)
Minimum rating for RGon
Minimum rating for RGoff
Max. rating for output charge per pulse
Operati ng tem pera ture
Storage temperature
50
2500
4000
1500
3
3
4 1)
- 40... + 85
- 40... + 85
kV/µs
Vac
Vac
V
Ω
Ω
µC
°C
°C
Electrical Characteristics (Ta = 25 °C) Values
Symbol Term min. typ. max. Units
VS
ISO
Vi
ViT+
ViT-
Supply voltage primary side
Supply current primary side (no load)
Supply current primary side (max.)
Input signal voltage SKHIxxA on/off
SKHI22B on/off
Input thr eshol d voltage (Hi gh) SKHIxxA
SKHI22B
Input threshold voltage (Low) SKHIxxA
SKHI22B
14,4
–
–
–
–
10,9
3,5
4,7
1,5
15
80
–
15 / 0
5 / 0
11,7
3,7
5,5
1,75
15,6
–
290
–
–
12,5
3,9
6,5
2,0
V
mA
mA
V
V
V
V
V
V
Rin Input resistance SKHIxxA
SKHI22B –
–10
3,3 –
–kΩ
kΩ
VG(on)
VG(off)
Turn on gate voltage output
Turn off gate voltage output SKHI22x
SKHI21A
–
–
–
+15
-7
0
–
–
–
V
V
V
RGE
fASIC
td(on)IO
td(off)IO
td(err)
tpERRRESET
tTD
VCEstat
Internal gat e-em itter resistanc e
Asic system switching frequency
Input-output turn-on propagation time
Input-output turn-off propagation time
Error input-output propagation time
Error reset time
Top-Bot Interlock Dead Time SKHI22x
SKHI21A
Reference voltage for VCE-monitoring
–
–
0,85
0,85
–
–
3,3
0
–
–
22
8
1
1
0,6
9
–
–
5 2)
6 3)
–
–
1,15
1,15
–
–
4,3
4,3
10
10
kΩ
MHz
µs
µs
µs
µs
µs
µs
V
V
Cps Coupling capacitance primary secondary – 12 – pF
MTBF
mMean Time Between Failure Ta = 40° C
weight –
–2,0
45 –
–106 h
g
SEMIDRIVER®
Hybrid Dual IGBT Driver
SKHI 22 A / B
•Double driver for halfbridge
IGBT modules
•SKHI 22 A/B H4 is for 1700
V-IGBT
•SKHI 22 A is compatible to
old SKHI 22
•SKHI 22 B has additional
functionality
Hybrid Dual MOSFET
Driver
SKHI 21 A
•drives MOSFETs with
VDS(on) < 10 V
•is compatible to old SKHI 21
Preliminary Data
Features
•CMOS co mpa tib le inp uts
•Short circuit prote ction by VCE
monitoring and swi tc h off
•Drive interlock top/bottom
•Isolation by transformers
•Supply undervoltage protection
(13 V)
•Error latch/output
Typical Applications
•Driver for IGBT and MOSFET
modules in bridge circuits in
choppers, inverter drives, UPS
and welding inverters
•DC bus voltage up to 1000V
1) see fig. 6
2) At RCE = 18 kΩ, CCE = 330pF
3) At RCE = 36 kΩ, CCE = 470pF,
RVCE = 1kΩ
2 000913 © by SEMIKRON
SKHI 21 A, SKHI 22 A / B
External Components
4) Higher resistance reduces free-wheeling diode peak recovery current, increases IGBT turn-on time.
5) Higher resistance reduces turn-off peak voltage, increases turn-off time and turn-off power dissipation
Component Function Recommended Value
RCE Reference voltage for VCE-monitoring
with RVCE = 1kΩ (1700V IGBT):
10kΩ < RCE < 100kΩ
18kΩ for SKM XX 123 (1200V)
36kΩ for SKM XX 173 (1700V)
CCE Inhibit time for VCE - monitoring CCE < 2,7nF
0,33nF for SKM XX 123 (1200V)
0,47nF for SKM XX 173 (1700V)
0,5µs < tmin < 10µs
RVCE Collector series resistance for 1700V IGBT-
operation 1kΩ / 0,4W
RERROR Pull-up resistance at e rror o utput 1kΩ < RERROR < 10kΩ
RGON Turn-on speed of the IGBT 4) RGON > 3Ω
RGOFF Turn-off speed of the IGBT 5) RGOFF > 3Ω
VCEstat V
() 10 RCE kΩ()⋅
10 RCE kΩ()+
--------- ------------- ------------- - 1,4 (1)–=
V
CEstat V
() 10 RCE kΩ()⋅
10 RCE kΩ()+
---------- ------------- ------------- 1,8 (1.1)–=
tmin τCE 15 VCEstat V
()–
10 VCEstat V
()–
----------------------------------------- (2)ln⋅=
τCE µs
() CCE nF
()
10 RCE kΩ()⋅
10 RCE kΩ()+
------------------------------------ (3)⋅=
UPull Up
–
RERROR
------------------------15mA
<
© by SEMIKRON 000913 3
I:\Marketin\FRAMEDAT\datbl\Treiber\SKHI22a.fm
SKHI 21 A, SKHI 22 A / B
PIN array
Fig. 2 shows the pin arra ys. Th e inpu t side ( primar y sid e) c omprise s 10 inputs (S KHI 22A / 21A 8 input s), forming the
interface to the control circuit (see fig.1).
The output side (secondary side) of the hybrid driver shows two symmetrical groups of pins with 4 outputs, each forming
the interface to the power module. All pins are designed for a grid of 2,54 mm.
Primary side PIN array
ATTENTION: Inputs P6 and P5 are not existing for SKHI 22A/ 21A. The contactor tracks of the digital input signals P5/
P6/ P9 must not be longer than 20 mm to avoid interferences, if no bridges are connected.
Secondary side PIN array
ATTENTION: The connector leads to the power module should be as short as possible.
PIN No. Designation Explanation
P14 GND / 0V related earth connection for input signals
P13 VS+ 15V ± 4% voltage supply
P12 VIN1 switching signal input 1 (TOP switch)
positive 5V logic (for SKHI22A /21A, 15V logic)
P11 free not wired
P10 /ERROR error output, low = error; open collector output; max 30V / 15mA
(for SKHI22A /21A, internal 10kΩ pull-up resistor versus VS)
P9 TDT2 signal input for digit al ad jus tm ent of lockin g tim e; to be swi t ch ed by
bridge to GND (for SKHI22A /21A, to be switched by bridge to VS)
P8 VIN2 switching signal input 2 (BOTTOM switch);
positive 5V logic (for SKHI22A /21A, 15V logic)
P7 GND / 0V related earth connection for input signals
P6 SELECT signal input for neutralizing locking function;
to be switched by bridge to GND
P5 TDT1 signal input for digital adjustment of locking time;
to be switched by bridge to GND
PIN No. Designation Explanation
S20 VCE1 collector output IGBT 1 (TOP switch)
S15 CCE1 reference voltage adjustment with RCE and CCE
S14 GON1 gate 1 RON output
S13 GOFF1 gate 1 ROFF output
S14 E1 emitter output IGBT 1 (TOP switch)
S1 VCE2 collector output IGBT 2 (BOTTOM switch)
S6 CCE2 reference voltage adjustment with RCE and CCE
S7 GON2 gate 2 RON output
S8 GOFF2 gate 2 ROFF output
S9 E2 emitter output IGBT 2 (BOTTOM switch)
4 000913 © by SEMIKRON
SKHI 21 A, SKHI 22 A / B
IGBT-Module
SEMITRANS
output2
(BOTTOM
)
LOAD
output1
(TOP)
=
Isolation
-input buffer
-short pulse
supression
-pulse shaper
VCE
R
S20
current VCE *
over *
*
S12
S13
S14
S15
current
Power
driver
over
R4
CE
R3
CE
C
CE
V
S1
Roff
**
on
VCE
R1
5
=
driver
Power
secondary side
7
CE
S7
S8
S6
on
R
off
R
R
6
CCE
*
S9
output
2
input1
(TOP) 6k8/100
VP12
iT 3k2
TDT1
SELECT
Error
TDT2
GND/OV
GND/OV
(BOTTOM)
input
input2
***
V***
ERROR
R
V
***S=
-interlock
-deadtime
6k8/100
VP8
iB P7 3k2
P5
P14
P9
P6
V=
S
VS
primary side
integrated in ASIC
-Vs monitor
-Error monitor
-Error memory
S
VSP13
P10
V
* When SKHI22B is driving 1700V IGBTs, a 1kΩ / 0,4 W R VCE-resistor must be connected in series to the VCE input.
** The VCE-terminal is to be connected to the IGBT collector C. If the VCE-monitoring is not used, connect S1 to S9 or S20 to S12 respectively.
*** Terminals P5 and P6 are not existing for SKHI22A/21A; internal pull-up resistor exists in SKHI22A/21A only.
1-7 Connections to SEMITRANS GB-module
Fig. 1 Block diagram of SKHI 22 A / B / 21 A
© by SEMIKRON 000913 5
I:\Marketin\FRAMEDAT\datbl\Treiber\SKHI22a.fm
SKHI 21 A, SKHI 22 A / B
VCE
VCE
GOFF
GON
CCE
CCE
GON
GOFF
18.25
E
E
13.53
P14
A
P13
22.86
2.54
P6
P5
±0.3
16
9.5
±0.2
55
50.8
measured from pin-centre to pin-centre
15.75
R2
TDT1
±0.3
OUT2
±0.2
55
SKHI XX Y
SELECT
TDT2
V
GND/0V
V
VS
GND/0V
IN1
IN2
ERROR
OUT1
Date - Code
S15
S20
A
S12
S9
S6
48.26
detail "A" on scale 10 : 1
3.37
±0.3
S1
15
A
3.5
±0.5
0.25x0.5
Fig. 2 Dimension drawing and PIN array (P5 and P6 are not existing for SKHI22A/21A)
6 000913 © by SEMIKRON
SKHI 21 A, SKHI 22 A / B
SEMIDRIVER®
SKHI 22A / 22B und SKHI 21A
Hybrid dual drivers
The driver generation SKHI 22A/B and SKHI 21A will
replace the hy brid driv ers SKH I 21/22 a nd is s uitable for
all available low and medium power range IGBT and
MOSFETs.
The SKHI 22A (SKHI 21A) is a form-, fit- and mostly
function-compatible replacement to its predecessor, the
SKHI 22 (SKHI 21).
The SKHI 22B is recommended for any new
development. It has two additional signal pins on the
primary side with which further functions may be utilized.
The SKHI 22A and SKHI 22B are available with standard
isolation (isolation testing voltage 2500 VAC, 1min) as
well as with an increased isolation voltage (type "H4")
(isolation testing voltage 4000 VAC, 1min). The SKHI 21A
is only offered with standard isolation features.
Differences SKHI 22-22A (SKHI 21-21A)
Compared to the old SKHI 22/21 the new driver
SKHI 22A / 21A is absolutely compatible with regards to
pins and mostly with regards to functions. It may be
equivalently used in existing PCBs.
The following points have to be considered when
exchanging the drivers:
•Leave out the two resistors RTD for interlocking
dead time adjustment at pin 11 and pin 9.
•The interlocking time of the driver stages in
halfbridge applications is adjusted to 3,25 µs. It may
be increased up to 4,25 µs by applying a 15 V (VS)
supply voltage at Pin 9 (TDT2) (wire bridge)
•The error reset time is typically 9µs.
•The input resistance is 10 kΩ
ΩΩ
Ω.
As far as the SKHI 22A is concerned, the negative gate
voltage required for turn-off of the IGBT is no longer -15V,
but -7V.
General description
The new driver generation SKHI 22A/B, SKHI 21A
consists of a hybrid component which may directly be
mounted to the PCB.
All devices necessary for driving, voltage supply, error
monitori ng and potential separation are integrated in the
driver. In order to adapt the driver to the used power
module, only very few additional wiring may be
necessary.
The forward voltage of the IGBT is detected by an
integrated short-circuit protection, which will turn off the
module when a certain threshold is exceeded.
In case of short-circuit or too low supply voltage the
integrated error memory is set and an error signal is
generated.
The driver is connected to a controlled + 15 V-supply
voltage. The input signal level is 0/15 V for the SKHI 22A/
21A and 0/5 V for the SKHI 22B.
In the following explanations the whole driver family will
be desig nated as SKHI 22B. If a special type is referred
to, the concerned driver version will explicitly be named.
Technical explanations1
Description of the circuit block diagram and the
functions of the driver
The block diagram (fig.1) shows the inputs of the driver
(primary side) on the left side and the outputs (secondary
side) on the right.
The following functions are allocated to the primary
side:
Input-Schmitt-trigger, CMOS compatible, positive logic
(input high = IGBT on)
Interlock circuit and deadtime gene ration of the IGBT
If one IGBT is turned on, the other IGBT of a halfbridge
cannot be switched. Additionally, a digitally adjustable
interlocking time is generated by the driver (see fig. 3),
which has to be longer than the turn-off del ay time of the
IGBT. T his is t o avoid that one IGB T is t urned on bef ore
the other one is not completely discharged. This protec-
tion-function may be neutralized by switching the select
input (pin6) (see fig. 3). fig. 3 documents possible
interlock-times. "High" value can be achieved with no
connection and connection to 5 V as well.
Fig. 3 SKHI 22B - Selection of interlock-times: „High“-
level can be achieved by no connection or
connecting to 5 V
Short pulse suppression
The integrated short pulse suppression avoids very short
switching pulses at the power semiconductor caused by
high-frequency interference pulses at the driver input
signals. Switching pulses shorter than 500 ns are
suppressed and not transmitted to the IGBT.
Power supply monitoring (VS)
A controlled 15 V-supply voltage is applied to the driver. If
it falls below 13 V, an error is monitored and the error
output signal switches to low level.
1. The following descriptions apply to the use of the hybrid
driver for IGBTs as well as for power MOSFETs. For the
reason of shortness, only IGBTs will be mentioned in the
following. The designations "collector" and "emitter" will refer
to IGBTs, where as for the MO SFETs " drain" and "sou rce" a re
to be read instead.
P6 ;
SELECT P5 ;
TDT1 P9 ;
TDT2 interlock time
tTD /µs
open / 5V GND GND 1,3
open / 5V GND open / 5V 2,3
open / 5V open / 5V GND 3,3
open / 5V open / 5V open / 5V 4,3
GND X X no interlock
© by SEMIKRON 000913 7
I:\Marketin\FRAMEDAT\datbl\Treiber\SKHI22a.fm
SKHI 21 A, SKHI 22 A / B
Error m oni to r in g and error me m ory
The error memory is set in case of under-voltage or short-
circuit of the IGBTs. In case of short-circuit, an error signal
is transmitted by the VCE-input via the pulse transformers
to the error memory. The error memory will lock all
switching pulses to the IGBTs and trigger the error output
(P10) of th e driver. The er ror output co nsists of an op en
collector transistor, which directs the signal to earth in
case of error. SEMIKRON recommends the user to
provide for a pull-up resistor directly connected to the
error e valuatio n boa rd a nd to adapt the err or level to the
desired signal voltage this way. The open collector
transistor may be connected to max. 30 V / 15 mA. If
several SKHI 22Bs are used in one device, the error
terminals may also be paralleled.
ATTENTION: Only the S KHI 22A / 21A i s equipped wi th
an internal pull-up resistor of 10 kΩ versus VS. The
SKHI 22B does not contain an internal pull-up resistor.
The error memory may only be reset, if no error is pending
and both cycle signal inputs are set to low for > 9 µs at the
same tim e.
Pulse transformer set
The transformer set consists of two pulse transformers
one is used bidirectional for turn-on and turn-off signals of
the IGBT and the error feedback between primary and
secondary side, the other one for the DC/DC-converter.
The DC/DC-converter serves as potential-separation and
power supply for the two secondary sides of the driver.
The isolation voltage for the "H4"-type is 4000 VAC and
2500 VAC for all other types.
The secondary side consists of two symmetrical
driver switches integrating the following compon-
ents:
Supply voltage
The voltage supply consists of a rectifier, a capacitor, a
voltage controller for - 7 V and + 15 V and a + 10 V
reference voltage.
Gate driver
The output transistors of the power drivers are
MOSFETs. The sources of the MOSFETs are separately
connected to external terminals in order to provide setting
of the turn-on and turn-off speed by the external resistors
RON and ROFF. Do not connect the terminals S7 with S8
and S13 with S14, respectively. The IGBT is turned on by
the driver at + 15 V by RON and turned off at - 7 V by ROFF.
RON and ROFF may not chosen below 3 Ω. In order to
ensure locking of the IGBT even when the driver supply
voltage is turned off, a 22 kΩ-resistor v ersus the emitter
output (E) has been integrated at output GOFF.
VCE-monitoring
The VCE-mon ito ring co ntrol s the col lecto r-emitt er vo ltage
VCE of the IGBT during its on-state. VCE is internally
limited to 10 V. If the reference voltage VCEref is exceeded,
the IGBT will be switched off and an error is indicated.
The reference voltage VCEref may dynamically be adapted
to the IGBTs switching behaviour. Immediately after turn-
on of the IGBT, a higher value is effective than in the
steady state. This value will, however, be reset, when the
IGBT is turned off. VCEstat is the steady-state value of
VCEref and is adj usted to the requi red ma ximum v alue for
each IGBT by an external resistor RCE to be connected
between the terminals CCE (S6/S15) and E (S9/S12). It
may not ex ceed 10 V. The time co nstant for the delay of
VCEref may be increased by an external capacitor CCE,
whic h is connecte d in paralle l to RCE. It c ontro ls t he tim e
tmin which passes after turn-on of the IGBT before the
VCE-monitoring is activated. This makes possible any
adaptation to the switching behavior of any of the IGBTs.
After tmin has passed, the VCE-monitoring will be triggered
as soon as VCE > VCEref and will turn off the IGBT.
External components and possible adjust-
ments of the hybrid driver
Fig. 1 shows the required external components for
adjustment and adaptation to the power module.
VCE - monitoring adjustmen t
The external components RCE and CCE are applied for
adjus ting the steady- state t hreshold and th e short- circuit
monitoring dynamic. RCE and CCE are connected in
parallel to the terminals CCE (S15/ S6) and E (S12/ S9) .
Fig. 4 VCEstat in dependence of RCE
Dimensioning of RCE and CCE can be done in three steps:
1. Calculate the maximum forward voltage from the
datasheet of the used IGBT and determine VCEstat
2. Calculate approximate value of RCE according to
equation (1) or (1.1) from VCEstat or determine RCE by
using fig.4.
3. Determine tmin and calculate CCE accor ding to
equations (2) and (3).
Typical values are
for 1200 V IGBT: VCEstat = 5 V; tmin = 1,45 µs,
RCE = 18 kΩ, CCE = 330 pF
for 1700 V IGBT: VCEstat = 6 V; tmin = 3 µs,
RCE = 36 kΩ, CCE = 470 pF
Adaptation to 1700 V IGBT
When using 1700 V IGBTs it is necessary to connect a
1k
Ω / 0,4 W adaptation resistor between the VCE-
terminal (S20/ S1) and the respective collector.
Adaptation to error signal level
An open collector transistor is used as error terminal,
which, in case of error, leads the signal to earth. The
signal has to be adapted to the evaluation circuit's voltage
0
1
2
3
4
5
6
7
8
10 20 30 40 50 60
Rce in kOhm
Vcestat in V
Vcestat w ithout Rvce (1200V
application)
Vcestat / V mit Rvc e = 1 kOhm
(1700V application)
8 000913 © by SEMIKRON
SKHI 21 A, SKHI 22 A / B
level by means of an externally connected pull-up
resistor. The maximum load applied to the transistor shall
be 30 V / 15 mA.
As for the SKHI 22A / 21A a 10 kΩ pull-up resistor versus
VS (P13) has already been integrated in the driver.
IGBT switching speed adjustment
The IGBT switching speed may be adjusted by the
resistors RON and ROFF. By increasing RON the turn-on
speed will decrease. The reverse peak current of the free-
wheeling diode will diminish. SEMIKRON recommends to
adjust R ON to a lev el tha t wil l keep the tu rn -on de lay ti me
td(on) of the IGBT < 1 µs.
By increasing ROFF the turn-off speed of the IGBT will
decrease. T he induc tive pea k overvo ltage dur ing tur n-off
will diminish.
The minimum gate resistor value for ROFF and RON is 3 Ω.
Typical values for RON and ROFF recommended by
SEMIKRON are given in fig. 5
Fig. 5 Typical values for external components
Interlocking time adjustment
Fig. 3 shows the possible interlocking times between
output1 and output2. Interlocking times are adjusted by
connecting the terminals TDT1 (P5), TDT2 (P9) and
SELECT (P6) either to earth/ GND (P7 and P14)
according to the required function or by leaving them
open.
A typical interlocking time value is 3,25 µs (P9 = GND; P5
and P6 open). For SKHI 22A / 21A the terminals TDT1
(P5) and SE LECT (P6) ar e not existing . The interlock ing
time has been fixed to 3,25 µs and may only be increased
to 4,25 µs by connecting TDT2 (P9) to VS (P13).
ATTENTION: If the t er mi nals T DT 1 (P5) , TDT 2 ( P9) a nd
SELECT (P6) are not connected, eventually connected
track on PC-board may not be longer than 20 mm in order
to avoid interferences.
SEMIKRO N rec ommend s to st art-up operatio n u sing the
values recommended by SEMIKRON and to optimize the
values gradually according to the IGBT switching
behaviour and overvoltage peaks within the specific
circuitry.
Driver performance and application limits
The dr ivers are desig ned for applica tion with halfbr idges
and single modules with a maximum gate charge QGE <
4 µC (see fig. 6).
The charge necessary to switch the IGBT is mainly
depending on the IGBT's chip size, the DC-link voltage
and the gate voltage.
This correlation is also shown in the corresponding
modu le data sh eet cu rves .
It should, however, be considered that the SKHI 22B is
turned on at + 15 V and turned off at - 7 V. Therefore, the
gate voltage will change by 22 V during every switching
procedure.
Unfortunately, most datasheets do not indicate negative
gate voltages. In order to determine the required charge,
the upper leg of the charge curve may be prolonged to
+ 22 V for determination of approximate charge per
switch.
The medium output current of the driver is determined by
the switching frequency and the gate charge. For the
SKHI 22B the maximum medium output current is
IoutAVmax < ± 40 mA.
The maximum switching frequency fMAX may be
calculated with the following formula, the maximum value
however being 100 kHz due to switching reasons:
Fig. 6 shows the maximum rating for the output charge
per pulse for different gate resistors.
Fig. 6 Maximum rating for output charge per pulse
Further application notes
The CMOS-inputs of the hybrid driver are extremely
sensitive to over-voltage. Voltages higher than VS
+ 0,3 V or below – 0,3 V may destroy these inputs.
Therefore, control signal over-voltages exceeding the
above values have to be avoided.
Please provide for static discharge protection during
handling. As long as the hybrid driver is not completely
assembled, the input terminals have to be short-circuited.
Persons working with CMOS-devices have to wear a
grounded bracelet. Any synthetic floor coverings must not
be statically chargeable. Even during transportation the
input terminals have to be short-circuited using, for
example, conductive rubber. Worktables have to be
SK-IGBT-Modul RGon
ΩRGoff
ΩCCE
pF RCE
kΩRVCE
kΩ
SKM 50GB123D 22 22 330 18 0
SKM 75GB123D 22 22 330 18 0
SKM 100GB123 D 15 15 330 18 0
SKM 145GB123 D 12 12 330 18 0
SKM 150GB123 D 12 12 330 18 0
SKM 200GB123 D 10 10 330 18 0
SKM 300GB123 D 8,2 8,2 330 18 0
SKM 400GA123 D 6,8 6,8 330 18 0
SKM 75GB173D 15 15 470 36 1
SKM 100GB173 D 12 12 470 36 1
SKM 150GB173 D 10 10 470 36 1
SKM 200GB173 D 8,2 8,2 470 36 1
fMAX kHz
() 410
4
⋅
QGE nC
()
------------------------=
SKHI 22 A/B maximum ratin
g
for out
p
ut char
g
e
p
er
pulse
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
0 102030405060
f / kHz
Q / µC
Rg=24 OHM; 3,86µC
Rg=18 OHM; 3,52µC
Rg=12 OHM; 3,07µC
Rg=6 OHM, 2,50µC
Rg=3 OHM, 2,18µC
© by SEMIKRON 000913 9
I:\Marketin\FRAMEDAT\datbl\Treiber\SKHI22a.fm
SKHI 21 A, SKHI 22 A / B
grounded. The same safety requirements apply to
MOSFET- and IGBT-modules!
The connecting leads between hybrid driver and the
power module should be as short as possible, the driver
leads should be twisted.
Any parasitic inductances within the DC-link have to be
minimized. Over-voltages may be absorbed by C- or
RCD-snubbers between the main terminals for PLUS and
MINUS of the power module.
When first operating a newly developed circuit,
SEMIKRON recommends to apply low collector voltage
and load current in the beginning and to increase these
values g radually, observing the turn-off behaviour of the
free-wheeling diode and the turn-off voltage spikes
generated accross the IGBT. An oscillographic control will
be ne cess ar y. In ad dit ion to th at the ca se temp er atu re of
the modul e has to be mo nitored. When th e circuit works
correctly under rated operation conditions, short-circuit
testing may be done, starting again with low collector
voltage.
It is important to feed any errors back to the control circuit
and to switch off the device immediately in such events.
Repeated turn-on of the IGBT into a short circuit with a
high frequency may destroy the device.
Mechanical fixing on PCB:
In applications with mechanical vibrations (vehicles)2 do
not use a ty -rap for fixing the driver , but - after solderin g
and testing - apply special glue. Recommended types:
CIBA GEIGY XP 5090 + 5091; PACTAN 5011; WACKER
A33 (ivory) or N199 (transparent), applied around the
case edge (forms a concave mould). The housing may
not be pressed on the PCB; do not twist the PCB with the
driver soldered on, otherwise the internal ceramics may
crack. The driver is not suitable for big PCBs.
SEMIKRON offers a printed circuit board (PCB) type
SKPC2006 compatible for mounting a SKHI 21A or
SKHI 22A. This PCB contains the necessary tracks to
connect the external capacitors CCE and resistors RCE,
Ron, Roff (see fig. 1).
The PCB may directly be plugged to SEMITRANS 3-IGBT
modules and be fixed to the heatsink by 3 thread bolts.
Dimensions: L x W x H = 96 x 67 x 1,5 mm.
For further details please contact SEMIKRON.
2. tested acceleration (x; y; z-axis):10-100 Hz: 1,5 g;
shock: 5 g (TÜV according to LES-DB-BN 411002)
This te chnical inf ormation spe cifies dev ices but prom ises no chara cteristics. No warranty o r guarantee ex pressed or i mplied is made
regarding delivery, per formance or suit ability.
