2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0
October 2014
2N3904 / MMBT3904 / PZT3904
NPN General-Purpose Amplifier
Ordering Information
Part Number Marking Package Packing Method Pack Quantity
2N3904BU 2N3904 TO-92 3L Bulk 10000
2N3904TA 2N3904 TO-92 3L Ammo 2000
2N3904TAR 2N3904 TO-92 3L Ammo 2000
2N3904TF 2N3904 TO-92 3L Tape and Reel 2000
2N3904TFR 2N3904 TO-92 3L Tape and Reel 2000
MMBT3904 1A SOT-23 3L Tape and Reel 3000
PZT3904 3904 SOT-223 4L Tape and Reel 2500
2N3904 MMBT3904 PZT3904
EBC TO-92 SOT-23 SOT-223
Mark:1A
C
B
EE
BC
C
Description
This device is designed as a general-purpose amplifier
and switch. The useful dynamic range extends to 100
mA as a switch and to 100 MHz as an amplifier.
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 2
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and stres sing the parts to these lev el s i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm2.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
Symbol Parameter Maximum Unit
2N3904 MMBT3904(3) PZT3904(4)
PDTotal Device Dissipation 625 350 1,000 mW
Derate Above 25°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Max. Unit
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V
IBL Base Cut-Off Current VCE = 30 V, VEB = 3 V 50 nA
ICEX Collector Cut-Off Curren t VCE = 30 V, VEB = 3 V 50 nA
ON CHARACTERISTICS(5)
hFE DC Current Gain
IC = 0.1 mA, VCE = 1.0 V 40
IC = 1.0 mA, VCE = 1.0 V 70
IC = 10 mA, VCE = 1.0 V 100 300
IC = 50 mA, VCE = 1.0 V 60
IC =100 mA, VCE = 1.0V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.2 V
IC = 50 mA, IB = 5.0 mA 0.3
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.65 0.85 V
IC = 50 mA, IB = 5.0 mA 0.95
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0,
f = 100 kHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, IC = 0,
f = 100 kHz 8.0 pF
NF Noise Figure IC = 100 μA, VCE = 5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz 5.0 dB
SWITCHING CHARACTERISTICS
tdDelay Time VCC = 3.0 V, VBE = 0.5 V
IC = 10 mA, IB1 = 1.0 mA 35 ns
trRise Time 35 ns
tsStorage Time VCC = 3.0 V, IC = 10 mA,
IB1 = IB2 = 1.0 mA 200 ns
tfFall Time 50 ns
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 4
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain vs. Collector
Current Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature Figure 6. Capacitance vs. Reverse Bias Voltage
0. 1 1 10 1 00
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β = 10
125 °C
- 40 °C
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cobo
C
ibo
f = 1.0 MHz
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 5
Typical Performance Characteristics (Continued)
Figure 7. Noise Figure vs. Frequency Figure 8. Noise Figure vs. Source Resistance
Figure 9. Current Gain and Phase Angle vs.
Frequency Figure 10. Power Dissipation vs.
Ambient Temperature
Figure 11. Turn-On Time vs. Collector Current Figure 12. Rise Time vs. Collector Current
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIGURE (dB)
V = 5.0V
CE
I = 100 μA, R = 500 Ω
CS
I = 1.0 mA
R = 200Ω
C
S
I = 50 μA
R = 1.0 kΩ
C
S
I = 0.5 mA
R = 200Ω
C
S
kΩ
Ω
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 μA
C
I = 1.0 mA
C
S
I = 50 μA
C
I = 5.0 mA
C
θθ - DEGREES
0
40
60
80
100
120
140
160
20
180
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h - CURRENT GAIN (dB)
θ
V = 40V
CE
I = 10 mA
C
hfe
fe
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
SOT-23
TO-92
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2
Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2
Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 6
Typical Performance Characteristics (Continued)
Figure 13. Storage Time vs. Collector Current Figure 14. Fall Time vs. Collector Current
Figure 15. Current Gain Figure 16. Output Admittance
Figure 17. Input Impedance Figure 18. Voltage Feedback Ratio
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2
Ic
10
S
T = 125°C
T = 25°C
J
J
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2
Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h - CURRENT GAIN
V = 10 V
CE
C
fe
f = 1.0 kHz
T = 25 C
A o
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - OUTPUT ADMITTANCE ( mhos)
V = 10 V
CE
C
oe
f = 1.0 kHz
T = 25 C
A o
μ
0.1 1 10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h - INPUT IMPEDANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A o
Ω
0.1 1 10
1
2
3
4
5
7
10
I - COLLECTOR CURRENT (mA)
h - VOLTAG E FEEDBACK RATIO (x10 )
V = 10 V
CE
C
re
f = 1.0 kHz
T = 25 C
A o
_4
2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 7
Test Circuits
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
t1
C1 <<
<<
< 4.0 pF
Duty Cycle ==
==
= 2%
Duty Cycle ==
==
= 2%
<<
<<
< 1.0 ns
- 0.5 V
300 ns
10.6 V
10 < <
< <
< t1 <<
<<
< 500 μμ
μμ
μs
10.9 V
- 9.1 V
<<
<<
< 1.0 ns
0
0
10 KΩΩ
ΩΩ
Ω
3.0 V
275 ΩΩ
ΩΩ
Ω
C1 <<
<<
< 4.0 pF
1N916
Figure 19. Delay and Rise Time Equivalent Test Circuit
Figure 20. Storage and Fall Time Equivalent Test Circuit
APPROVED
July-14-2008
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I76
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