BYW29E-200
Ultrafast power diode
Rev.01 - 4 June 2018 Product data sheet
1. General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benets
• Fast switching
• Guaranteed ESD capability
• High thermal cycling performance
• Low on-state loss
• Low thermal resistance
• Rugged: reverse voltage surge capability
• Soft recovery minimizes power-consuming oscillations
3. Applications
• Output rectiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
VRRM repetitive peak reverse
voltage
200 V
IF(AV) average forward current δ = 0.5 ; Tmb ≤ 128 °C; square-wave pulse;
Fig. 1; Fig. 2
8 A
IFRM repetitive peak forward
current
δ = 0.5 ; tp = 25 μs; Tmb ≤ 128 °C;
square-wave pulse
16 A
IFSM non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse 80 A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse 88 A
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VFforward voltage IF = 8 A; Tj = 150 °C; Fig. 4 - 0.8 0.895 V
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7
- 20 25 ns
Electrostatic discharge
VESD electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ - - 8 kV
WeEn Semiconductors BYW29E-200
Ultrafast power diode
BYW29E-200
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5. Pinning information
6. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplied outline Graphic symbol
1 K cathode
mb
1 2
TO-220AC (SOD59)
A
001aaa020
K
2 A anode
mb mb mounting base; cathode
Type number Package
Name Description Version
BYW29E-200 TO-220AC plastic single-ended package; heatsink mounted;
1 mounting hole; 2-lead TO-220AC
SOD59
Table 3. Ordering information
7. Marking
Type number Marking codes
BYW29E-200 BYW29E-200
Table 4. Marking codes
WeEn Semiconductors BYW29E-200
Ultrafast power diode
BYW29E-200
Product
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8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Values Unit
VRRM repetitive peak reverse
voltage
200 V
VRWM crest working reverse
voltage
200 V
VR reverse voltage 200 V
IF(AV) average forward current δ = 0.5 ; Tmb ≤ 128 °C ;square-wave pulse;
Fig. 1; Fig. 2
8 A
IFRM repetitive peak forward
current
δ = 0.5 ; tp = 25 μs; Tmb ≤ 128 °C;
square-wave pulse
16 A
IFSM non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse 80 A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse 88 A
IRRM repetitive peak reverse
current
δ = 0.001 ; tp = 2 μs 0.2 A
IRSM non-repetitive peak
reverse current
tp = 100 μs 0.2 A
Tstg storage temperature -40 to 150 °C
Tj junction temperature 150 °C
Electrostatic discharge
VESD electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ 8 kV
IF(AV) = IF(RMS) × √δ
Vo = 0.791 V; Rs = 0.013 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
a = form factor = IF(RMS) / IF(AV)
Vo = 0.791 V; Rs = 0.013 Ω
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
WeEn Semiconductors BYW29E-200
Ultrafast power diode
BYW29E-200
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June
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9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction to
mounting base
Fig. 3 - - 2.7 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air - 60 - K/W
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse width
WeEn Semiconductors BYW29E-200
Ultrafast power diode
BYW29E-200
Product
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June
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10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VF forward voltage IF = 8 A; Tj = 25 °C; Fig. 4 - 0.92 1.05 V
IF = 20 A; Tj = 25 °C; Fig. 4 - 1.1 1.3 V
IF = 8 A; Tj = 150 °C; Fig. 4 - 0.8 0.895 V
IR reverse current VR = 200 V; Tj = 25 °C - 2 10 μA
VR = 200 V; Tj = 100 °C - 0.2 0.6 mA
Dynamic characteristics
Qr recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/μs;
Tj = 25 °C; Fig. 5; Fig. 6
- 4 11 nC
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; ramp recovery; Fig. 5; Fig. 7
- 20 25 ns
IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;
Tj = 25 °C; step recovery; Fig. 8
- 15 20 ns
vFRM forward recovery voltage IF = 1 A; dIF/dt = 10 A/μs; Tj = 25 °C;
Fig. 9
- 1 - V
003aac562
trr
time
100 %
25 %
IF
dlF
dt
IRIRM
Qr
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Vo = 0.791 V; Rs = 0.013 Ω
Fig. 4. Forward current as a function of forward voltage
Fig. 5. Reverse recovery denitions; ramp recovery
WeEn Semiconductors BYW29E-200
Ultrafast power diode
BYW29E-200
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2018 6 / 10
001aab912
time
time
VFR
M
VF
IF
V
F
(1) IF = 1 A; Tj = 25 °C
(2) IF = 2 A; Tj = 25 °C
(3) IF = 5 A; Tj = 25 °C
(4) IF = 10 A; Tj = 25 °C
Fig. 6. Recovered charge as a function of rate of
change of forward current; maximum values
(1) IF = 1 A; Tj = 25 °C
(2) IF = 10 A; Tj = 25 °C
Fig. 7. Reverse recovery time as a function of rate of
change of forward current; maximum values
Fig. 8. Reverse recovery denitions; step recovery Fig. 9. Forward recovery denitions
WeEn Semiconductors BYW29E-200
Ultrafast power diode
BYW29E-200
Product
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June
2018 7 / 10
11. Package outline
WeEn Semiconductors BYW29E-200
Ultrafast power diode
BYW29E-200
Product
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June
2018 8 / 10
12. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1 lease consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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In the event that customer uses the product for design-in and use in
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]P
WeEn Semiconductors BYW29E-200
Ultrafast power diode
BYW29E-200
Product
data
sheet
All
information
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June
2018 9 / 10
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
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WeEn Semiconductors BYW29E-200
Ultrafast power diode
BYW29E-200
Product
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June
2018 10 / 10
13. Contents
1. General description .......................................................1
2. Features and benets ...................................................1
3. Applications ...................................................................1
4. Quick reference data ..................................................... 1
5. Pinning information .......................................................2
6. Ordering information .....................................................2
7. Marking ...........................................................................2
8. Limiting values ..............................................................3
9. Thermal characteristics ................................................4
10. Characteristics.............................................................5
11. Package outline ...........................................................7
12. Legal information ........................................................8
13. Contents ..................................................................... 10
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales oce addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 4 June 2018
