PZTA 42, PZTA 43 NPN Silicon High-Voltage Transistors * High breakdown voltage 4 * Low collector-emitter saturation voltage * Complementary types; PZTA 92, PZTA 93 (PNP) 3 2 1 Pin Configuration VPS05163 Type Marking Package PZTA 42 PZTA 42 1=B 2=C 3=E 4=C SOT-223 PZTA 43 PZTA 43 1=B 2=C 3=E 4=C SOT-223 Maximum Ratings Parameter Symbol PZTA 42 PZTA 43 Unit Collector-emitter voltage VCEO 300 200 Collector-base voltage VCBO 300 200 Emitter-base voltage VEBO 6 6 DC collector current IC 500 Base current IB 100 Total power dissipation, TS = 124 C Ptot 1.5 W Junction temperature Tj 150 C Storage temperature Tstg V mA -65 ... 150 Thermal Resistance Junction ambient 1) RthJA 72 Junction - soldering point RthJS 17 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu 1 Oct-14-1999 PZTA 42, PZTA 43 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 PZTA 42 300 - - PZTA 43 200 - - PZTA 42 300 - - PZTA 43 200 - - 6 - - Collector-base breakdown voltage IC = 100 A, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 100 A, IC = 0 Collector cutoff current nA ICBO VCB = 200 V, IE = 0 PZTA 42 - - 100 VCB = 160 V, IE = 0 PZTA 43 - - 100 Collector cutoff current A ICBO VCB = 200 V, IE = 0 , TA = 150 C PZTA 42 - - 20 VCB = 160 V, IE = 0 , TA = 150 C PZTA 43 - - 20 - - 100 Emitter cutoff current IEBO nA VEB = 3 V, IC = 0 DC current gain 1) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 40 - - Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA V VCEsat PZTA 42 - - 0.5 PZTA 43 - - 0.4 - - 0.9 Base-emitter saturation voltage 1) VBEsat IC = 20 mA, IB = 2 mA 1) Pulse test: t < 300s; D < 2% 2 Oct-14-1999 PZTA 42, PZTA 43 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. - 70 - AC Characteristics Transition frequency fT MHz IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance pF Ccb VCB = 20 V, f = 1 MHz PZTA 42 - - 3 PZTA 43 - - 4 Total power dissipation Ptot = f (TA*;TS ) Transition frequency fT = f (IC) * Package mounted on epoxy VCE = 10V, f = 100MHz 1.6 Ptot PZTA 42/43 10 3 EHP00722 PZTA 42/43 EHP00723 MHz W fT 1.2 TA 1.0 TS 10 2 0.8 0.6 5 0.4 0.2 0.0 0 50 100 C 10 1 10 0 150 5 10 1 5 10 2 mA 5 10 3 C TA ; TS 3 Oct-14-1999 PZTA 42, PZTA 43 Permissible pulse load DC current gain hFE = f (I C) Ptotmax / PtotDC = f (tp ) VCE = 10V 10 3 PZTA 42/43 10 3 EHP00320 Ptot max 5 Ptot DC D= tp tp T h FE PZTA 42/43 EHP00724 5 T 10 2 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 2 10 1 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -1 10 0 5 10 0 tp 5 10 1 5 10 2 mA 10 3 C Collector cutoff current ICBO = f (TA) Collector current I C = f (VBE) VCB = 160V VCE = 10V 10 4 nA PZTA 42/43 10 3 EHP00725 PZTA 42/43 EHP00726 mA CBO C max 10 3 5 10 2 5 10 5 2 10 1 typ 10 1 5 5 10 0 10 0 5 10 -1 5 0 50 10 -1 C 150 100 0 0.5 V 1.0 1.5 V BE TA 4 Oct-14-1999