Silicon Phototransistor
SDP8405
DESCRIPTION
FEATURES
T-1 plastic package
•
20¡ (nominal) acceptance angle
•
Consistent optical properties
•
Wide sensitivity ranges
•
Mechanically and spectrally matched to
SEP8505 and SEP8705 infrared emitting diodes
•
The SDP8405 is an NPN silicon phototransistor transfer
molded in a T-1 clear plastic package. Transfer molding
of this device assures superior optical centerline
performance compared to other molding processes.
Lead lengths are staggered to provide a simple method
of polarity identification.
(.51)
.020SQ.LEAD
TYP
.050
(1.27)
DIA.
(3.94)
.155
EMITTER
COLLECTOR
DIA.
.125(3.18)
.115(2.92)
MIN.
(12.7)
.500
.03(.76)
.180(4.57)
.200(5.08)
MAX.
(6.35)
.250
.05(1.27)
DIM_100.ds4
INFRA-22.TIF
in inches (mm)
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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116
Silicon Phototransistor
SDP8405
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
70 mW [À]
Operating Temperature Range
-40¡C to 85¡C
Storage Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.18 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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117
Silicon Phototransistor
SDP8405
SWITCHING TIME TEST CIRCUIT
cir_015.cdr
SWITCHING WAVEFORM
cir_004.cdr
Responsivity vs
Angular Displacement
gra_047.ds4
Angular displacement - degrees
Relative response
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Fig. 1 Collector Current vs
Ambient Temperature
gra_039.ds4
Ambient temperature - °C
Normalized collector
current
0.0
0.4
0.8
1.2
1.6
2.0
0 10 20 30 40 50 60 70 80
Fig. 2
Dark Current vs
Temperature
gra_301.cdr
Fig. 3 Non-Saturated Switching Time vs
Load Resistance
gra_041.ds4
Load resistance - Ohms
Response time - µs
1
10
100
10 100 1000 10000
Fig. 4
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
118
Silicon Phototransistor
SDP8405
Spectral Responsivity
gra_036.ds4
Wavelength - nm
Relative response
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
400 600 800 1000 1200
Fig. 5 Coupling Characteristics
with SEP8505
gra_029.ds4
Lens-to-lens separation - inches
Light current - mA
0.1
0.2
0.4
1
2
4
10
0.01 0.2 0.4 0.7 1 0.02 0.04 0.1
0.7
7
VCE = 5 V
IF = 25 mA
TA = 25 °C
Fig. 6
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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119