DATA SH EET
Product specification
Supersedes data of November 1992 1995 Sep 04
DISCRETE SEMICONDUCTORS
BFS17W
NPN 1 GHz wideband transistor
1995 Sep 04 2
NXP Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
APPLICATIONS
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same cry sta l as
the SOT23 version, BFS17.
PINNING
PIN DESCRIPTION
1base
2emitter
3 collector
Fig.1 SOT323
handbook, 2 columns 3
12
MBC870
Top view
Marking code: E1
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the sold ering point of the collector p in.
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g System (IEC 134).
Note
1. Ts is the temperature at the sold ering point of the collector p in.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage 25 V
VCEO collector-emitter vo ltage 15 V
ICDC collector current 50 mA
Ptot total power dissipation up to Ts=118C; note 1 300 mW
hFE DC current gain IC=2mA; V
CE =1V 25 90
fTtransition frequency IC=25mA; V
CE =5V 1.6 GHz
Cccollector capacitance IE=0; V
CB =10V; f=1MHz 0.8 1.5 pF
Cre feedback capacit an ce IC=1mA; V
CE =5V; f=1MHz 0.75 pF
Tjjunction temperature 175 C
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collecto r 2.5 V
ICcollector current (DC) 50 mA
Ptot total power dissipation Ts=118C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tjjunction temperatur e 175 C
1995 Sep 04 3
NXP Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
THERMAL CHARACTE RISTI CS
Note
1. Ts is the temperature at the sold ering point of the collector p in.
CHARACTERISTICS
Tj=25C (unless otherwise specified).
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts=118C; note 1 190 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE=0; V
CB =10V 10 nA
hFE DC current gain IC=2mA; V
CE =1V 25 90
fTtransition frequency IC=25mA; V
CE =5V;
f=500MHz
1.6 GHz
Cccollector capacitance IE=i
e=0; V
CB =10V;
f=1MHz
0.8 1.5 pF
Ceemitter cap a citance IC=i
c=0; V
EB =0.5V;
f=1MHz
2pF
Cre feedback capacitance IB=i
b=0; V
CE =5V;
f=1MHz; T
amb =25C
0.75 pF
F noise figure IC=2mA; V
CE =5V;
f=500MHz; S=opt
4.5 dB
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
200
0
MLB587
150T ( C)
o
s
Ptot
(mW)
300
400
100
Fig.3 DC current gain as a function of collector
current; typical values.
VCE =1V.
handbook, halfpage
60
20
40
MBG237
0 110
hFE
IC (mA)
10−1102
1995 Sep 04 4
NXP Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
IB=i
b=0; f=1MHz.
handbook, halfpage
0
2
010
MBG238
24
1.5
1
0.5
68
Cre
(pF)
VCB (V)
Fig.5 Transition frequency as a function
of collector current; typical values.
Tamb =25C; f = 500 MHz.
handbook, halfpage
2
1.5
1
MBG239
2.5
10
1
5 V
VCE = 10 V
fT
(GHz)
IC (mA) 102
Fig.6 Minimum noise figure as func tion of
frequency; typic al v alues.
VCE =10V.
handbook, halfpage MBG240
F
(dB)
f (MHz)
20
15
10
5
0103
102
10−310−210−1101
1995 Sep 04 5
NXP Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT323
04-11-04
06-03-16
1995 Sep 04 6
NXP Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed si nce this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development T his doc ument contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
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provided in a Product data she et shall define the
specification of the product as agreed between NXP
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product is deemed to offer functions and qualities beyond
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Limited warranty and liability Information in this
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However, NXP Semiconduc tors does not give any
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modification.
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associated with their ap plications and products.
1995 Sep 04 7
NXP Semiconductors Product specification
NPN 1 GHz wideband transistor BFS17W
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
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customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any othe r
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technic al content, except for package outline
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Printed in The Netherlands R77/02/pp8 Date of release: 1995 Sep 04
