2SJ1200),,2SJ1208) SILICON P-CHANNEL MOS FET a ed ee ee 25Kd16 fae 72 ee IAT as eft y 7 fa ea oA. end oF YP 7AZE= FH, eReHneren cl: 4. effet pill (| ASO ai. 24 oF TF ab 2, DE =-De.a #ii F, epwy ey FS 40 ee @ ABSOLUTE MAXIMUM RATINGS (T.=25 C) it _ POWER WS. TEMPERATURE DERATING tiem Symbol Rating Unit Drain-Source Voltage View 40 OP! az Gate-Source Voltage Vow 20 V Drain Current -2 A = Drain Peak Current diapenia =4 A z- Body-Drrain Diode is 9 A Reverse Drain Current z Channel Cissipation Pp" 10 WwW pe Chance! Temperature Tea 1h =C j Storage Tenperatire Ted -i = +150 | Cc Viglen aT" *C NI 6 in jaa | Cine Teepetuiere Te [C! @ ELECTRICAL CHARACTERISTICS (T.=25C) | _ Them Symbol | Test Condition min. | typ. | max. | Unit Drain-Source Breakdown Voltage Views fo= 10m A. Vor=0 a; | | Wy Gate-Source Leak Current Tess Vorti0V, Vero - = =! ai | fare Gaie Voltage Drain Current } teas Vor a8, Vern - | -100| pA Gate Source Cutnif Voltage Veit Ip=imA. Voge 10 =10| |-0| V9 ee eae Pass fe=1A, Vis=-15V" =| 12] 18] tt Drain-Source Saturation Voltage Vina Ie= LA. Vas=150" 1) bel cas] Forward Transfer Admittance ind | feet A. Kae 200" fi} 2s) | 89 Inpul Capacitance c . ' = 1 i | Output Capacitance cl Vere eee | cia] -| pee Reverse Transfer Capacitance | ly f=iMPs | 2 | pF) Turnon Delay Time hoes ; = 9 | "Rise Time i fee 1A. Via =15 ates Turn-alf Delay Time "ia #.=300 _ 17 - ra Fall Time ty =| zw] +] = " Body-Drain Diode Forward Voltage Ve L=1A. Vem _|-o8}| a Body-Dprain Diode : TH-1A. Vie=t 3) teg|ol Reverse Recovery Time divdtfO0 Ass * Rules Test |