MMBT2222A-13-F - DIODES Incorporated

MMBT2222A

Document number: DS30041 Rev. 13 - 2 1 of 7

www.diodes.com August 2012

MMBT2222A

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary PNP Type Available (MMBT2907A)

• Ideal for Low Power Amplification and Switching

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound, UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Leads; Solderable per MIL-STD-

202, Method 208

• Weight: 0.008 grams (approximate)

Ordering Information (Note 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

MMBT2222A-7-F AEC-Q101 K1P / C1P 7 8 3,000

MMBT2222A-13-F AEC-Q101 K1P / C1P 13 8 10,000

MMBT2222AQ-7-F Automotive K1P 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)

and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K = SAT (Shanghai Assembly / Test site)

1P = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: N = 2002)

M = Month (ex: 9 = September)

K1P

Device Symbol Top View

Pin-Out

Top View

SOT23

C = CAT (Chengdu Assembly / Test site)

1P = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: N = 2002)

M = Month (ex: 9 = September)

MMBT2222A

Document number: DS30041 Rev. 13 - 2 2 of 7

www.diodes.com August 2012

MMBT2222A

Maximum Ratings (@TA = +25°C unless otherwise specified)

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO 75 V

Collector-Emitter Voltage VCEO 40 V

Emitter-Base Voltage VEBO 6.0 V

Collector Current - Continuous IC 600 mA

Peak Collector Current ICM 800 mA

Thermal Characteristics (@TA = +25°C unless otherwise specified)

Characteristic Symbol Value Unit

Collector Power Dissipation (Note 6) PD 310 mW

(Note 7) 350

Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 °C/W

(Note 7) 357

Thermal Resistance, Junction to Leads (Note 8) RθJL 350 °C/W

Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C

ESD Ratings (Note 9)

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B

Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; the device is

measured when operating in a steady-state condition.

7. Same as Note 6, except the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB

8. Thermal resistance from junctio n to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

MMBT2222A

Document number: DS30041 Rev. 13 - 2 3 of 7

www.diodes.com August 2012

MMBT2222A

Thermal Characteristics

0 255075100125150

0.0

0.1

0.2

0.3

0.4

Derating Curve

Temperature (°C)

Ma x Powe r Di ssipati on (W )

100µ 1m 10m 100m 1 10 100 1k

100

150

200

250

300

350

400

Transient Therm al Imped an ce

D=0.5

D=0.2 D=0.1 Single Pulse

D=0.05

The rmal R esist a n ce (°C/ W )

Pu l se Wid th (s )

10m 100m 1 10 100 1k

0.1

10 Single Pulse. Tamb=25°C

Pulse Power Dissipation

Pu l se Width (s)

Max P owe r Dissip at i on (W)

MMBT2222A

Document number: DS30041 Rev. 13 - 2 4 of 7

www.diodes.com August 2012

MMBT2222A

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic (Note 9) Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage BVCBO 75 ⎯ V IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage BVCEO 40 ⎯ V IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage BVEBO 6.0 ⎯ V IE = 100μA, IC = 0

Collector Cutoff Current ICBO ⎯ 10 nA

μA VCB = 60V, IE = 0

VCB = 60V, IE = 0, TA = 150°C

Collector Cutoff Current ICEX ⎯ 10 nA VCE = 60V, VEB

(

OFF

)

= 3.0V

Emitter Cutoff Current IEBO ⎯ 10 nA VEB = 3.0V, IC = 0

Base Cutoff Current IBL ⎯ 20 nA VCE = 60V, VEB

(

OFF

)

= 3.0V

ON CHARACTERISTICS (Note 9)

DC Current Gain hFE

100

⎯

300

⎯

IC = 100μA, VCE = 10V

IC = 1.0mA, VCE = 10V

IC = 10mA, VCE = 10V

IC = 150mA, VCE = 10V

IC = 500mA, VCE = 10V

IC = 10mA, VCE = 10V, TA = -55°C

IC = 150mA, VCE = 1.0V

Collector-Emitter Saturation Voltage VCE(sat) ⎯ 0.3

1.0 V IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

Base-Emitter Saturation Voltage VBE(sat) 0.6

⎯ 1.2

2.0 V IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance Cobo ⎯ 8 pF VCB = 10V, f = 1.0MHz, IE = 0

Input Capacitance Cibo — 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 20mA,

f = 100MHz

Noise Figure NF ⎯ 4.0 dB VCE = 10V, IC = 100μA,

RS = 1.0kΩ, f = 1.0kHz

SWITCHING CHARACTERISTICS

Delay Time td ⎯ 10 ns VCC = 30V, IC = 150mA,

VBE

(

off

)

= - 0.5V, IB1 = 15mA

Rise Time tr ⎯ 25 ns VCC = 3.0V, IC = 150mA, IB1 = 15mA,

VBE

(

OFF

)

= 0.5V

Storage Time ts ⎯ 225 ns VCC = 30V, IC = 150mA,

IB1 = IB2 = 15mA

Fall Time tf ⎯ 60 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA

Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

MMBT2222A

Document number: DS30041 Rev. 13 - 2 5 of 7

www.diodes.com August 2012

MMBT2222A

1,000

100

0.1 110 1,000

100

h, D

I , COLLECTOR CURRENT (mA)

Figure 1 Typical DC Current Gain vs. Collector Current

T = -25°C

T = 25°C

T = 125°C

V = 1.0V

110 100 1,000

LLE

-EMI

SATURATION VOLTAGE (V)

CE(SAT)

I , COLLECTOR CURRENT (mA)

Figure 2 Typical Collector-Emitter Saturation V oltage

vs. Col lecto r Cu r rent

T = 25°C

T = -50°C

T = 150°C

0.1

0.2

0.3

0.4

0.5

= 10

10.1 10 100

V , BASE-EMI

E (V)

BE(ON)

I , COLLECTOR CURRENT (mA)

Figure 3 Base-Emitter Turn-On Voltage

vs. Collector Current

0.2

0.3

0.4

0.6

0.5

0.8

0.7

1.0

0.9

V = 5V

T = 25°C

T = -50°C

T = 150°C

CAPACITANCE (pF)

0246810 12 14 16 18 20

f = 1MHz

obo

ibo

V , REVERSE VOLTS (V)

Fig ur e 4 Typical Capacit ance Ch ar acteristics

100

1,000

110100

I , COLLECTOR CURRENT (mA)

Figure 5 Typical Gain Bandwidth Product

vs. Collector Current

AIN BANDWID

V = 5V

0.001 0.01 110

0.1 100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I , BASE CURRENT (mA)

Figure 6 Typical Collector Saturation Region

LLE

-EMI

E (V)

I = 1mA

I = 10mA

I = 30mA

I = 100mA

I = 300mA

MMBT2222A

Document number: DS30041 Rev. 13 - 2 6 of 7

www.diodes.com August 2012

MMBT2222A

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

MMBT2222A

Document number: DS30041 Rev. 13 - 2 7 of 7

www.diodes.com August 2012

MMBT2222A

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.