Page 1
REV:
CDBD2SC21200-G
QW-BSCXX
Reverse Voltage: 1200V
Forward Current: 2A
RoHS Device
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
Circuit diagram
C(3)
A(2) C(1)
Parameter Unit
Maximum Ratings (at TA=25°C, unless otherwise noted)
Repetitive peak reverse voltage
DC bolcking voltage
Continuous forward current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Symbol
VRRM
VDC
IF
IFSM
PTOT
RθJC
TJ
1200
35
53.2
23
2.82
-55 ~ +175
V
V
A
A
W
°C/W
°C
Storage temperature range TSTG -55 ~ +175 °C
Value
1200
TC = 25°C
TC = 135°C
TC = 155°C
6.2
3.2
2
Repetitive peak forward surge current IFRM 15 A
Conditions
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
TC = 25°C
TC = 110°C
Surge peak reverse voltage VRSM 1200 V
Junction to case
Silicon Carbide Power Schottky Diode
Dimensions in inches and (millimeters)
TO-263/D2PAK
0.402(10.20)
0.394(10.00)
0.596(15.15)
0.585(14.85)
0.019(0.47)
0.014(0.37)
0.054(1.37)
0.046(1.17)
0.185(4.70)
0.177(4.50)
0.107(2.72)
0.091(2.32)
0.063(1.60)
0.055(1.40)
0.049(1.25)
0.045(1.15)
0.037(0.95)
0.033(0.85)
0.051(1.30)
0.043(1.10)
0.346(8.80)
0.339(8.60)
0.205(5.20)
0.197(5.00)
Features
- Rated to 1200V at 2 Amps
- Short recovery time
- High speed switching possible
- Temperature independent switching behaviour.
- High temperature operation.
- High frequency operation.
- Positive temperature coefficient on VF
1
3
2
Silicon Carbide Power Schottky Diode
Page 2
QW-BSCXX
REV:
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
Unit
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Total capacitive charge
Total capacitance
nC
pF
Conditions
QC
C
150
136
Parameter Max.
Symbol
Min.
Forward voltage VF
IF = 2A, Tj = 25°C V
1.7
3
IF = 2A, Tj = 175°C
Typ.
1.62
2.8
Reverse current μA
IR
200
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
100
30
20
VR = 800V, Tj = 150°C
QC = ∫ C(V) dv
VR
0
12
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj = 25°C, f = 1MHZ
VR = 800V, Tj = 25°C, f = 1MHZ
13
12
12
11
RATING AND CHARACTERISTIC CURVES (CDBD2SC21200-G)
Forward Voltage, VF (V) Reverse Voltage, VR (V)
0
0
0.004
Reverse Voltage, VR (V)
Fig.4 - Capacitance VS. Reverse Voltage
400 800
Capacitance Between Terminals, CJ (pF) Reverse Current, IR (mA)
Forward Current, IF (A)
1200
0.002
0.006
0.008
0.014
Fig.3 - Current Derating
Case Tempature, TC (°C)
Forward Current, IF (A)
0
20
755025 125 150 175100
0
20
40
60
80
100
0.01 0.1 110 100 1000
600 1000200
120
140
22
0.010
0.012
18
160
1.00.50 1.5 2.0 2.5
TJ=175°C
TJ=125°C
TJ=25°C
TJ=75°C
0.5
1.0
1.5
2.0
0
2.5
3.0
3.5
3.0 3.5 4.0 4.5
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
1400
10% Duty
30% Duty
50% Duty DC
70% Duty
16
14
12
10
8
6
4
2
Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics
