January 2007 Rev 13 1/14
14
STB20NM50 - STB20NM50-1
STP20NM50 - STP20NM50FP
N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PA K
MDmesh™ Power MOSFET
General features
■High dv/dt and avalanche capabilities
■100% avalanche tested
■Low input capacitance and gate charge
■Low gate input resistance
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the Multiple
Drain process with the Company’s
PowerMESH™horizontal layout. The resulting
product has an outstanding low on-resistance,
impressively high dv/dt and excellent avalanche
characteristics and dynamic performances.
Applications
■Switching applications
Internal schematic diagram
Type VDSS
(@TJmax)RDS(on) ID
STB20NM50 550V < 0.25Ω20A
STB20NM50-1 550V < 0.25Ω20A
STP20NM50 550V < 0.25Ω20A
STP20NM50FP 550V < 0.25Ω20A
TO-220 TO-220FP
123
12
3
1231
3
I²PAK D²PAK
www.st.com
Order codes
Part number Marking Package Packaging
STB20NM50 B20NM50 D²PAK Tape & reel
STB20NM50-1 B20NM50-1 I²PAK Tube
STP20NM50 P20NM50 TO-220 Tube
STP20NM50FP P20NM50FP TO-220FP Tube
Contents STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
D²PAK / I²PAK
TO-220 TO-220FP
VDS Drain source voltage 500 V
VGS Gate-source voltage ± 30 V
IDDrain current (continuous) at TC = 25°C 20 20 (1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC = 100°C 12.6 12.6 (1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 80 80 (1) A
PTOT Total dissipation at TC = 25°C 192 45 W
Derating factor 1.54 0.36 W/°C
dv/dt (3)
3. ISD < 20A, di/dt < 400A/µs, VDD < V(BR)DSS, TJ < TJMAX
Peak diode recovery voltage slope 15 V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
-- 2500 V
Tj
Tstg
Operating junction temperature
Storage temperature -65 to 150 °C
Table 2. Thermal data
Symbol Parameter
Value
Unit
D²PAK / I²PAK
TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max 0.65 2.8 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 °C/W
TlMaximum lead temperature for soldering
purpose 300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAR Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max) 10 A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID= 5A, VDD= 50V) 650 mJ
Electrical characteristics STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage ID = 250µA, VGS= 0 500 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±30V ±100 µA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 345V
RDS(on) Static drain-source on
resistance VGS= 10 V, ID= 10 A 0.20 0.25 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance VDS > ID(ON) x RDS(ON)max,
ID = 10A 10 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz,
VGS=0
1480
285
34
pF
pF
pF
Coss eq.
(2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance VGS=0, VDS =0V to 400V 130 pF
Rg Gate input resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6 Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=400V, ID = 20A
VGS =10V
(see Figure 15)
40
13
19
56 nC
nC
nC
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Electrical characteristics
5/14
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time VDD=250 V, ID=10A,
RG=4.7Ω, VGS=10V
(see Figure 14)
24
16
ns
ns
td(off)
tf
Turn-off delay time
Fall time
40
12
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=400 V, ID=20A,
RG=4.7Ω, VGS=10V
(see Figure 16)
9
8.5
23
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
VSD (2)
2. Pulsed: pulse duration 300µs duty cycle 1.5%
Forward on voltage ISD=20A, VGS=0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj= 25°C
(see Figure 16)
350
4.6
26
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=20A,di/dt=100A/µs,
VDD=100 V, Tj=150°C
(see Figure 16)
435
5.9
27
ns
µC
A
Electrical characteristics STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
6/14
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220/
D²PA K/I² PAK
Figure 2. Thermal impedance for TO-220/
D²PAK/I²PAK
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characteristics Figure 6. Transfer characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Electrical characteristics
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Figure 7. Transconductance Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 12. Normalized on resistance vs
temperature
Electrical characteristics STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
8/14
Figure 13. Source-drain diode forward
characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Test circuit
9/14
3 Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
Package mechanical data STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
10/14
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Package mechanical data
11/14
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
Package mechanical data STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
12/14
L2
A
B
D
E
H
G
L6
F
L3
G1
123
F2
F1
L7
L4
L5
DIM. mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Revision history
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5 Revision history
Table 8. revision history
Date Revision Changes
09-Sep-2004 9 Final version
04-Sep-2006 10 The document has been reformatted
15-Dec-2006 11 Modified Table 7.: Source drain diode
08-Jan-2007 12 Modified value in order code
26-Jan-2007 13 Modified Table 6.: Switching times
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
14/14
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