BP 104 F
BP 104 FS
Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT
Silicon Pin Photodiode with Daylight Filter; in SMT
BP 104 F BP 104 FS
2001-02-21 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen bei 950 nm
• Kurze Schaltzeit (typ. 20 ns)
• DIL-Plastikbauform mit hoher Packungsdichte
• BP 104 FS: geeignet für Vapor-Phase Löten
und IR-Reflow Löten
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Gerätefernsteuerungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
BP 104 F Q62702-P84 DIL-Gehäuse, schwarzes Epoxy-Gießharz,
Kathodenkennzeichnung: Fähnchen am Anschluß
DIL package, black epoxy resin
Cathode marking: flag on lead
BP 104 FS Q62702-P1646 DIL/SMT-Gehäuse, schwarzes Epoxy-Gießharz,
Kathodenkennzeichnung: Langer, breiter Anschluß
DIL/SMT package, black epoxy resin
Cathode marking: long broad lead
Features
•Especially suitable for applications of 950 nm
•Short switching time (typ. 20 ns)
•DIL plastic package with high packing density
•BP 104 FS: suitable for vapor-phase and
IR-reflow soldering
Applications
•IR remote control of hi-fi and TV sets, video
tape recorders, dimmers, remote controls of
various equipment
•Photointerrupters
2001-02-21 2
BP 104 F, BP 104 FS
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR20 V
Verlustleistung, TA = 25 °CPtot 150 mW
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom
Photocurrent
VR = 5 V, Ee = 1 mW/cm2
IP34 (≥ 25) µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 950 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ800 …1100 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A4.84 mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
L×W
2.20 ×2.20 mm ×mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H0.5
0.3 (BP 104 FS) mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 (≤ 30) nA
Spektrale Fotoempfindlichke it
Spectral sensitivity Sλ0.70 A/W
Quantenausbeute
Quantum yield η0.90 Electrons
Photon
BP 104 F, BP 104 FS
2001-02-21 3
Leerlaufspannung, Ee = 0.5 mW/cm2
Open-circuit voltage VO330 (≥ 250) mV
Kurzschlußstrom, Ee = 0.5 mW/cm2
Short-circuit current ISC 17 µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
tr, tf20 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C048 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V
NEP 3.6 ×10–14
Nachweisgrenze, VR = 10 V
Detection limit D* 6.1 ×1012
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
BP 104 F, BP 104 FS
2001-02-21 4
Relati ve Sp ectral Sen si ti vi ty
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Cha ra cter i sti cs
Srel = f (ϕ)
λ
OHF00368
0
rel
S
700
20
40
60
80
%
100
nm
800 900 1000 1200
OHFD1781
R
Ι
00
V
R
pA
V
5 10 15 20
1000
2000
3000
4000
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurre nt IP = f (Ee), VR = 5 V
Open-Ci r cu it V oltage VO = f (Ee)
Capacitance
C = f (VR), f = 1 MHz, E = 0
E
OHF01056
e
0
10
P
Ι
-1
10 10
1
10
2
10
4
10
0
10
1
10
2
10
34
10
3
10
2
10
1
10
10
0
V
O
µ
AmV
Ι
P
V
O
2
W/cmµ
V
OHF01778
R
-2
10
C
10 -1 10 010 110 2
V
0
10
20
30
40
50
pF
60
Total Power Dissipat i on
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
BP 104 F, BP 104 FS
2001-02-21 5
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensions are specified as follo w s: mm (inch).
GEOY6075
4.0 (0.157)
3.7 (0.146) 4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5˚
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.20 (0.087) x 2.20 (0.087)
1.8 (0.071)
BP 104 F
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6861
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
Chip position
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.20 (0.087) x 2.20 (0.087)
1.6 (0.063)
(0...0.004)
±0.2 (0.008)
0...0.1
BP 104 FS
2001-02-21 6
BP 104 F, BP 104 FS
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describes the type of co m ponent and sha ll not be c ons idered as assured charac te ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components use d in life-support de vices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume that the health of the user may be endange red.
