DMN3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) max ID max TA = 25C 28m @ VGS = 10V 5.8A 42m @ VGS = 4.5V 4.8A V(BR)DSS * * * * * * * 30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * * * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) * * Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors * * Drain D Gate Internal Schematic Top View S G Source Top View Ordering Information (Note 3) Part Number DMN3404L-7 DMN3404LQ-7 Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. YM Marking Information 34N Date Code Key Year Code Month Code 2009 W Jan 1 2010 X Feb 2 DMN3404L Document number: DS31787 Rev. 6 - 2 Mar 3 34N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D November 2011 (c) Diodes Incorporated DMN3404L Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 10V Steady State TA = 25C TA = 70C TA = 25C TA = 70C Value 30 20 4.2 3.5 ID Units V V A IDM 5.8 4.9 30 Symbol PD RJA PD RJA TJ, TSTG Value 0.72 173 1.4 90 -55 to +150 ID Pulsed Drain Current A A Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25C Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25C Operating and Storage Temperature Range Unit W C/W W C/W C Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 - - 1.0 100 V A nA VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) 1.0 1.5 2.0 V RDS (ON) - 24 33 28 42 m |Yfs| VSD - 10 0.75 1.0 S V VDS = VGS, ID = 250A VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.8A VDS = 5V, ID = 5.8A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 386 44 39 1.51 9.2 1.2 1.8 3.41 6.18 13.92 2.84 - pF pF pF nC nC nC ns ns ns ns VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 5.8A VDD = 15V, VGS = 10V, RL = 2.6, RG = 3 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. DMN3404L Document number: DS31787 Rev. 6 - 2 2 of 6 www.diodes.com November 2011 (c) Diodes Incorporated DMN3404L 20 20 VGS = 8V VGS = 4.5V VDS = 5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 12 12 VGS = 3.0V 8 8 TA = 150C 4 4 TA = 125C TA = 85C TA = 25C VGS = 2.0V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.3 0.25 0.2 VGS = 2.5V 0.15 0.1 0.05 VGS = 4.5V 0 0.1 VGS = 8.0V 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 0.08 VGS = 4.5V T A = 150C 0.06 TA = 125C TA = 85C 0.04 TA = 25C TA = -55C 0.02 0 0 100 4 8 12 16 ID, DRAIN CURRENT (A) 20 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.8 0.07 0.06 1.6 RDSON , DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = -55C 0 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = 2.5V VGS = 10V ID = 10A 1.4 VGS = 4.5V ID = 5.0A 1.2 1.0 0.8 0.05 VGS = 4.5V ID = 5.0A 0.04 0.03 VGS = 10V ID = 10A 0.02 0.01 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMN3404L Document number: DS31787 Rev. 6 - 2 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature November 2011 (c) Diodes Incorporated DMN3404L 20 18 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 1.6 ID = 1mA ID = 250A 1.2 TA = 25C 16 14 12 10 8 6 4 2 0.8 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,000 0.6 0.7 0.8 0.9 1 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 IDSS, LEAKAGE CURRENT (nA) f = 1MHz C, CAPACITANCE (pF) 0 0.5 Ciss 100 Coss Crss 1,000 TA = 150C TA = 125C 100 10 T A = 85C T A = -55C 10 TA = 25C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 30 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 10 100 8 ID , DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) RDS(on) Limited VDS = 15V ID = 5.8A 6 4 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms 2 TJ(max) = 150C TA = 25C Single Pulse 0 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMN3404L Document number: DS31787 Rev. 6 - 2 10 0.01 0.1 4 of 6 www.diodes.com PW = 100s PW = 10s 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Safe Operation Area 100 November 2011 (c) Diodes Incorporated DMN3404L r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 163C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D F J L G Suggested Pad Layout Y Z C X DMN3404L Document number: DS31787 Rev. 6 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com November 2011 (c) Diodes Incorporated DMN3404L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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