DMN3404L
Document number: DS31787 Rev. 6 - 2 1 of 6
www.diodes.com November 2011
© Diodes Incorporated
DMN3404L
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = 25°C
30V 28m @ VGS = 10V 5.8A
42m @ VGS = 4.5V 4.8A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Battery Charging
• Power Management Functions
• DC-DC Converters
• Portable Power Adaptors
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Part Number Qualification Case Packaging
DMN3404L-7 Commercial SOT23 3000/Tape & Reel
DMN3404LQ-7 Automotive SOT23 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Internal Schematic Top View
D
GS
Source
Gate
Drain
34N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
34N
YM
DMN3404L
Document number: DS31787 Rev. 6 - 2 2 of 6
www.diodes.com November 2011
© Diodes Incorporated
DMN3404L
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 4) VGS = 10V Steady
State TA = 25°C
TA = 70°C ID 4.2
3.5 A
Continuous Drain Current (Note 5) VGS = 10V Steady
State TA = 25°C
TA = 70°C ID 5.8
4.9 A
Pulsed Drain Current IDM 30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 0.72 W
Thermal Resistance, Junction to Ambient @TA = 25°C RJA 173 °C/W
Power Dissipation (Note 5) PD 1.4 W
Thermal Resistance, Junction to Ambient @TA = 25°C RJA 90 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 30 - - V
VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0 A VDS = 30V, VGS = 0V
Gate-Source Leakage IGSS - - ±100 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
1.0 1.5 2.0 V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS (ON) - 24
33 28
42 mΩ VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.8A
Forward Transfer Admittance |Yfs| - 10 - S
VDS = 5V, ID = 5.8A
Diode Forward Voltage VSD - 0.75 1.0 V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss - 386 - pF VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss - 44 - pF
Reverse Transfer Capacitance Crss - 39 - pF
Gate Resistance R
g
- 1.51 - Ω VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Q
g
- 9.2 - nC VGS = 10V, VDS = 15V, ID = 5.8A
Gate-Source Charge Q
g
s - 1.2 - nC
Gate-Drain Charge Q
g
d - 1.8 - nC
Turn-On Delay Time tD
(
on
)
- 3.41 - ns
VDD = 15V, VGS = 10V,
RL = 2.6, RG = 3
Turn-On Rise Time t
r
- 6.18 - ns
Turn-Off Delay Time tD
(
off
)
- 13.92 - ns
Turn-Off Fall Time tf - 2.84 - ns
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
DMN3404L
Document number: DS31787 Rev. 6 - 2 3 of 6
www.diodes.com November 2011
© Diodes Incorporated
DMN3404L
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig. 1 Typical Output Characteristic
V , DRAI N- SOURC E VO LTAGE (V)
DS
0
4
8
12
20
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
16
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8V
GS
V = 2.5V
GS
1.5 2 2.5 3 3.5 4
Fig. 2 T ypical Transfer Characteristic
V , GA TE-SOURCE VOLTAGE (V)
GS
0
4
8
12
16
20
I, D
AIN
EN
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
0.05
0.1
0.15
0.2
0.25
0.3
0.1 1 10 100
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
Fig. 3 Typical On-Resistance
vs . Dr ai n Curre nt and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
V = 8.0V
GS
V = 4.5V
GS
V = 2.5V
GS
0
0.02
0.04
0.06
0.08
048121620
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
1.8
, D
AIN-S
E
ON-RESISTANCE (NORMALIZED)
DSON
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = 4.5V
I = 5.0A
GS
D
V = 10V
I = 10A
GS
D
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
, D
AIN-S
E
ON-RESISTANCE ( )
DSON
Ω
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = 10V
I = 10A
GS
D
V = 4.5V
I = 5.0A
GS
D
DMN3404L
Document number: DS31787 Rev. 6 - 2 4 of 6
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© Diodes Incorporated
DMN3404L
0.8
1.2
1.6
2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 1mA
D
I = 250µA
D
0
2
4
6
8
10
12
14
16
18
20
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Fi g. 8 Diode For w ard Vol t age vs . C urr ent
V , SOURCE-DRAIN VOLTAGE (V)
SD
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
10
100
1,000
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
,
A
A
I
AN
E (p
)
C
iss
C
rss
C
oss
f = 1MHz
1
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig . 10 Typical Leak age Current vs. D r ai n- Source Volt age
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, LEAKA
E
EN
(nA)
DSS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
02 46810
Fig. 11 Ga te - Charge Characteris ti cs
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
10
V,
A
E-S
E V
L
A
E (V)
GS
8
V = 15V
I = 5.8A
DS
D
0.1 1 10 100
Fig. 12 Safe Operation Area
V , DRAIN-SOURCE VOLT AGE (V)
DS
0.01
0.1
1
10
100
I, D
AI
E
(A)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
DMN3404L
Document number: DS31787 Rev. 6 - 2 5 of 6
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© Diodes Incorporated
DMN3404L
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
T
R
A
N
SIE
N
T
T
H
E
R
MAL
R
ESIS
T
A
N
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 163°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
Fig. 13 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
DMN3404L
Document number: DS31787 Rev. 6 - 2 6 of 6
www.diodes.com November 2011
© Diodes Incorporated
DMN3404L
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