VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 1Document Number: 94292
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Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
IF(AV) 2 x 15 A
VR45 V
VF at IFSee Electrical table
IRM max. 100 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 10 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform (per device) 30 A
VRRM 35/45 V
IFRM TC = 123 °C (per leg) 30 A
IFSM tp = 5 μs sine 1020
VF20 Apk, TJ = 125 °C 0.6 V
TJRange - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR3045CTPbF VS-MBR3045CT-N3 UNITS
Maximum DC reverse voltage VR45 45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg IF(AV) TC = 123 °C, rated VR
15
A
per device 30
Peak repetitive forward current per leg IFRM Rated VR, square wave, 20 kHz, TC = 123 °C 30
Non-repetitive peak surge current IFSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
1020
Surge applied at rated load conditions halfwave,
single phase, 60 Hz 200
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 5 mH 10 mJ
Repetitive avalanche current per leg IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 2A
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 2Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
30 A TJ = 25 °C 0.76
V20 A TJ = 125 °C 0.6
30 A 0.72
Maximum instantaneous reverse current IRM (1) TJ = 25 °C Rated DC voltage 1mA
TJ = 125 °C 100
Threshold voltage VF(TO) TJ = TJ maximum 0.29 V
Forward slope resistance rt13.6 m
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 800 pF
Typical series inductance LSMeasured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ- 65 to 150 °C
Maximum storage temperature range TStg - 65 to 175
Maximum thermal resistance,
junction to case per leg RthJC DC operation 1.5
°C/W
Typical thermal resistance,
case to heatsink RthCS
Mounting surface, smooth and greased
Only for TO-220 0.50
Maximum thermal resistance,
junction to ambient RthJA DC operation
For D2PAK and TO-262 50
Approximate weight 2g
0.07 oz.
Mounting torque minimum Non-lubricated threads 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB MBR3045CT
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 3Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
1.5
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.60 0.3 0.9 1.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.1
1
10
100
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
5040302010
0.01
0.001
TJ = 150 °C
1000
TJ = 50 °C
TJ = 100 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
1000
040
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
20
100
5030
10
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20 Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
PDM
t1
t2
0.01
100 10
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 4Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
015
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
120
5
See note (1)
10
150
Square wave (D = 0.50)
Rated VR applied
25
100
140 DC
20
110
130
0
015
6
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
5
3
25
15
9
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
2010
12
RMS limit
DC
100 1000
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
100
10 00010
1000
At any rated load condition
and with rated VRRM applied
following surge
VS-MBR3045CTPbF, VS-MBR3045CT-N3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-11 5Document Number: 94292
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MBR3045CTPbF 50 1000 Antistatic plastic tube
VS-MBR3045CT-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95222
Part marking information TO-220AB PbF www.vishay.com/doc?95225
TO-220AB -N3 www.vishay.com/doc?95028
- Schottky MBR series
- Current rating (30 = 30 A)
- Voltage ratings (045 = 45 V)
- CT = Essential part number
Device code
62 43 5
MBR 30 45 CT PbF
1
VS-
-Vishay Semiconductors product
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
2
3
4
5
6
1
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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