FMMT493
Document number: DS33093 Rev. 5 - 2
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FMMT493
100V NPN MEDIUM POWER TRANSISTOR IN SOT23
Features
BVCEO > 100V
IC = 1A High Continuous Collector Current
ICM = 2A Peak Pulse Current
500mW Power Dissipation
hFE Characterised Up to 2A for High Current Gain Hold Up
Complementary PNP Type: FMMT593
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The FMMT493Q is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
Weight: 0.008 grams (Approximate)
Ordering Information (Note 4)
Part Number
Marking
Reel Size (inches)
Quantity per Reel
FMMT493TA
493
7
3,000
FMMT493QTA
493
7
3,000
FMMT493TC
493
13
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
493 = Product Type Marking Code
SOT23 (Type DN)
Top View
Device Symbol
C
E
B
C
E
B
e3
493
SOT23 (Type DN)
B
FMMT493
Document number: DS33093 Rev. 5 - 2
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FMMT493
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
1
A
Peak Pulse Current
ICM
2
A
Base Current
IB
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
500
mW
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
250
°C/W
Thermal Resistance, Junction to Lead (Note 6)
RθJL
197
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
≥ 400
V
C
Notes: 5. For a device mounted on 15mm 15mm 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst
operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT493
Document number: DS33093 Rev. 5 - 2
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FMMT493
Thermal Characteristics and Derating Information
110 100
1m
10m
100m
1
15 x 15mm FR4
1oz Copper
VCE(sat)
Limit
100祍
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IC Collector Current (A)
-VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
15 x 15mm FR4 1oz Copper
Derating Curve
Temperature (oC)
Max Power Dissipation (W)
100μ 1m 10m 100m 110 100 1k
0
40
80
120
160
200
240 15 x 15mm FR4 1oz Copper
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (oC/W)
Pulse Width (s) 100μ 1m 10m 100m 110 100 1k
0.1
1
10
100 15 x 15mm FR4 1oz Copper
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
μ
μ
FMMT493
Document number: DS33093 Rev. 5 - 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
120
—
—
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 8)
BVCEO
100
—
—
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
7
—
—
V
IE = 100µA
Collector Cutoff Current
ICBO
—
—
100
nA
VCB = 100V
Emitter Cutoff Current
IEBO
—
—
50
nA
VEB = 5.6V
Collector Emitter Cutoff Current
ICES
—
—
100
nA
VCE = 100V
Static Forward Current Transfer Ratio (Note 8)
hFE
100
100
60
20
—
—
—
—
—
300
—
—
—
IC = 1mA, VCE = 10V
IC = 250mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 1A, VCE = 10V
Collector-Emitter Saturation Voltage (Note 8)
VCE(sat)
—
—
300
600
mV
mV
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
Base-Emitter Turn-On Voltage (Note 8)
VBE(on)
—
—
1.0
V
IC = 1A, VCE = 10V
Base-Emitter Saturation Voltage (Note 8)
VBE(sat)
—
—
1.15
V
IC = 1A, IB = 100mA
Output Capacitance
Cobo
—
—
10
pF
VCB = 10V, f = 1MHz
Transition Frequency
fT
150
—
—
MHz
VCE = 10V, IC = 50mA,
f = 100MHz
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
FMMT493
Document number: DS33093 Rev. 5 - 2
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© Diodes Incorporated
FMMT493
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FMMT493
Document number: DS33093 Rev. 5 - 2
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FMMT493
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23 (Type DN)
E
A1
c
L
D
A
b
e
e1
E1
L1
SOT23 Type DN
Dim
Min
Max
Typ
A
0.89
1.12
1.00
A1
0.01
0.10
0.05
b
0.30
0.51
0.45
c
0.08
0.20
0.10
D
2.80
3.04
3.00
E
2.10
2.64
2.42
E1
1.20
1.40
1.37
e
0.95 REF
e1
1.90 REF
L
0.25
0.60
0.30
L1
0.45
0.62
0.54
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23 (Type DN)
X
Y
Y1 C
X1
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
FMMT493
Document number: DS33093 Rev. 5 - 2
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© Diodes Incorporated
FMMT493
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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