All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 14 Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
0
5
10
15
20
25
30
35
40
-55
-50
-45
-40
-35
-30
-25
-20
-15
32 34 36 38 40 42 44 46 48 50
Efficiency (%)
IMD (dBc)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 2170 MHz,
3GPP signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
ACPR
IMD Low
IMD Up
RF Characteristics
Two-carrier WCDMA Specications (not subject to production test—veried by design/characterization in Inneon test
xture)
VDD = 30 V, IDQ = 1.85 A, POUT = 55 W average, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps — 18.0 — dB
Drain Efciency hD — 31 — %
Intermodulation Distortion IMD — –33 — dBc
Description
The PTFB212503EL and PTFB212503FL are 240-watt
LDMOS FETs intended for use in multi-standard cellular power
amplier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain, wide
signal bandwidth and reduced memory effects for unparalleled
DPD correctability. Manufactured with Inneon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFB212503EL
Package H-33288-6
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Wide video bandwidth
• Typical single-carrier WCDMA performance at 2170 MHz,
30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth =
3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
- Average output power = 49.4 dBm
- Linear gain = 18 dB
- Efciency = 37%
- Intermodulation distortion = –33 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 240 W
- Efciency = 54 %
• Increased negative gate-source voltage range for
improved performance in Doherty peaking ampliers
• Integrated ESD protection: Human Body Model, Class 2
(minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)
output power
• Pb-free, RoHS-compliant
PTFB212503FL
Package H-34288-4/2
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
Data Sheet 2 of 14 Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Specications (tested in Inneon test xture)
VDD = 30 V, IDQ = 1.85 A, POUT = 200 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 17 18 — dB
Drain Efciency hD 39 40 — %
Intermodulation Distortion IMD — –30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — W
Operating Gate Voltage VDS = 30 V, IDQ = 1.85 A VGS 2.3 2.8 3.3 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 200 W CW) RqJC 0.26 °C/W
Ordering Information
Type and Version Package Outline Description Shipping
PTFB212503EL V1 H-33288-6 Thermally-enhanced slotted ange, single-ended Tray
PTFB212503EL V1 R250 H-33288-6 Thermally-enhanced slotted ange, single-ended Tape & Reel, 250 pcs
PTFB212503FL V2 H-34288-4/2 Thermally-enhanced earless ange, single-ended Tray
PTFB212503FL V2 R250 H-34288-4/2 Thermally-enhanced earless ange, single-ended Tape & Reel, 250 pcs
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Data Sheet 3 of 14 Rev. 07, 2010-11-04
0
10
20
30
40
50
15
16
17
18
19
20
33 35 37 39 41 43 45 47 49 51
Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Gain
Efficiency
5
15
25
35
45
55
65
14
15
16
17
18
19
20
38 40 42 44 46 48 50 52 54
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Power Sweep
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 2170 MHz
Efficiency
Gain
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
15
20
25
30
35
40
45
50
55
60
2070 2090 2110 2130 2150 2170 2190 2210
Return Loss (dB), IMD (dBc)
Gain (dB) / Efficiency (%)
Frequency (MHz)
Two-tone Broadband Performance
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 100 W
Gain
Efficiency
RL
IMD 3
-55
-50
-45
-40
-35
-30
-25
32 34 36 38 40 42 44 46 48 50
IMD (dBc)
Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, 3GPP signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
2170 MHz Low
2170 MHz Up
2140 MHz Low
2140 MHz Up
2110 MHz Low
2110 MHz Up
Typical Performance (data taken in a production test xture)
Data Sheet 4 of 14 Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
0
5
10
15
20
25
30
35
40
45
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
37 39 41 43 45 47 49 51 53 55
Efficiency (%)
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
Efficiency
IMD 3rd
0
10
20
30
40
50
15
16
17
18
19
20
37 39 41 43 45 47 49 51 53 55
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
Gain
Efficiency
-60
-55
-50
-45
-40
-35
-30
-25
-20
35 40 45 50 55
IMD (dBc)
Output Power, PEP (dBm)
Third Order Intermodulation Distortion
vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A,
2170 MHz
2140 MHz
2110 MHz
-70
-60
-50
-40
-30
-20
35 40 45 50 55
IMD (dBc)
Output Power, PEP (dBm)
Intermodulation Distortion
V
DD
= 30 V, I
DQ
= 1.85 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
3rd Order
7th
5th
Typical Performance (cont.)
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Data Sheet 5 of 14 Rev. 07, 2010-11-04
16
17
18
19
35 40 45 50 55
Power Gain (dB)
Output Power (dBm)
CW Performance
Gain vs. Output Power
V
DD
= 30 V, ƒ = 2170 MHz
I
DQ
= 1.85 A
I
DQ
= 2.11 A
I
DQ
= 1.30 A
0
10
20
30
40
50
60
-80
-70
-60
-50
-40
-30
-20
33 35 37 39 41 43 45 47 49 51
Drain Efficiency (%)
IM3 (dBc)
Output Power (dBm)
Single-carrier WCDMA
V
DD
= 30 V, I
DQ
= 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8.5 dB, BW 3.84 MHz
IM3
Efficiency
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
10
15
20
25
30
35
40
45
50
55
60
1960 2020 2080 2140 2200 2260 2320
Return Loss (dB) / IM3 (dBc)
Gain (dB) / Efficiency (%)
Frequency (MHz)
Single-carrier WCDMA, 3GGP Broadband
V
DD
= 30 V, I
DQ
= 1.85 A, P
OUT
= 63 W
Gain
Efficiency
RL
IM3
0
10
20
30
40
50
60
15
16
17
18
19
20
21
35 40 45 50 55
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Performance
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 2170 MHz
+25°C
+85°C
–10°C
Efficiency
Gain
Typical Performance (cont.)
Data Sheet 6 of 14 Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
0.1
0.3
0.5
0.2
0.4
0.1
0.1
0.3
0
.2
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Load
Z Source
2200 MHz
2080 MHz
Z Source Z Load
G
S
D
Z0 = 50 W
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
2080 2.42 –5.57 1.34 –4.23
2110 2.31 –5.36 1.32 –4.12
2140 2.21 –5.15 1.29 –4.01
2170 2.12 –4.96 1.27 –3.91
2200 2.04 –4.77 1.25 –3.81
See next page for reference circuit information
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Data Sheet 7 of 14 Rev. 07, 2010-11-04
C102
2.4 pF
R101
10 Ohm
C103
10 pF
R102
10 Ohm
C104
10 pF
R804
1200 Ohm
R805
1300 Ohm
TL101
TL102
TL103
TL104
TL105 TL106
TL107
1 2
3
TL108
12
3
TL109
1
2
3
TL110
1
2
3
TL111
1
2
3
TL112
R801
10 Ohm
R802
100 Ohm
RF_IN GATE DUT
(Pin A)
In Out
NC NC
1
2 3
45
6 7
8
S2
3
S3
S
C
B
E
1
2
3
4
S1
TL138
C106
4700000 pF
C105
4700000 pF
TL115
TL116
1 2
3
TL117
TL118
TL119
C801
1000 pF
C802
1000 pF
C803
1000 pF
R803
10 Ohm
TL120
C101
7.5 pF
TL113
TL114
TL121
1
2
3
4
TL122
TL123
TL124
TL125
TL126
TL127
TL128
TL129
TL130
TL131
TL132
TL133
TL134
TL135
TL136
TL137
b 2 1 2 5 0 3e fl _ b di n _ 0 8-0 4 - 2 0 1 0
C201
1.2 pF
C202
1.2 pF
TL201 TL202 TL203
TL204
TL205
TL206
1
2
3
4
TL207
V
DD
TL208
TL209
TL210 TL211
12
3
TL212
12
3
TL213
12
3
TL214
TL215 TL216
TL217
TL218 TL219 TL220
TL221
TL222
TL223
TL224 TL225
C203
6.2 pF
1 2
3
TL226
TL227
TL228
1 2
3
TL229
1 2
3
TL230
1 2
3
TL231 TL232
DRAIN DUT
(Pin C)
12
3
TL233
TL234
C204
10000000 pF
C205
10000000 pF
C206
2200000 pF
C207
2200000 pF
C208
1000000 pF
C209
1000000 pF
C210
10000000 pF
C211
10000000 pF
b 2 1 2 5 0 3e fl _ b do u t _0 8 -0 4 -2 0 1 0
DUT
(Pin D)
DUT
(Pin D)
RF_OUT
V
DD
Reference Circuit
Reference circuit input schematic for ƒ = 2170 MHz
Reference circuit output schematic for ƒ = 2170 MHz
e
r
=3.48
H=20 mil
RO/RO4350B1
e
r
=3.48
H=20 mil
RO/RO4350B1
Data Sheet 8 of 14 Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT PTFB212503EL or PTFB212503FL
PCB 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101 0.043 l, 54.17 W W = 1.016, L = 3.594 W = 40, L = 142
TL102 0.107 l, 63.89 W W = 0.762, L = 9.050 W = 30, L = 356
TL103 0.044 l, 63.89 W W = 0.762, L = 3.734 W = 30, L = 147
TL104 0.031 l, 34.72 W W = 1.981, L = 2.540 W = 78, L = 100
TL105 W1 = 1.270, W2 = 2.286 W1 = 50, W2 = 90
TL106 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500
TL107 (taper) 0.027 l, 6.67 W / 15.80 W W1 = 13.970, W2 = 5.334, L = 2.032 W1 = 550, W2 = 210, L = 80
TL108, TL109 0.012 l, 54.17 W W1 = 1.016, W2 = 1.016, W3 = 1.016 W1 = 40, W2 = 40, W3 = 40
TL110 0.012 l, 54.17 W W1 = 1.016, W2 = 1.270, W3 = 1.016 W1 = 40, W2 = 50, W3 = 40
TL111, TL112 0.012 l, 63.89 W W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 30, W2 = 30, W3 = 40
TL113, TL114, TL121 W = 1.016 W = 40
TL115 0.000 l, 15.80 W W = 5.334, L = 0.000 W = 210, L = 0
TL116 (taper) 0.013 l, 15.80 W / 47.12 W W1 = 5.334, W2 = 1.270, L = 0.991 W1 = 210, W2 = 50, L = 39
TL117 0.000 l, 15.80 W W1 = 5.334, W2 = 5.334, W3 = 0.025 W1 = 210, W2 = 210, W3 = 1
TL118 0.000 l, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1
TL119 0.000 l, 15.80 W W = 5.334, L = 0.000 W = 210, L = 0
TL120 0.018 l, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60
TL122 W1 = 13.970, W2 = 1.016, W3 = 13.970 W1 = 550, W2 = 40, W3 = 550,
W4 = 1.016 W4 = 40
TL123 0.005 l, 6.67 W W = 13.970, L = 0.381 W = 550, L = 15
TL124 0.032 l, 47.12 W W = 1.270, L = 2.692 W = 50, L = 106
TL125, TL137 0.026 l, 54.17 W W = 1.016, L = 2.159 W = 40, L = 85
TL126 0.016 l, 31.24 W W = 2.286, L = 1.270 W = 90, L = 50
TL127, TL128 0.095 l, 54.17 W W = 1.016, L = 8.001 W = 40, L = 315
TL129 0.012 l, 54.17 W W = 1.016, L = 1.016 W = 40, L = 40
TL130 0.134 l, 47.12 W W = 1.270, L = 11.151 W = 50, L = 439
TL131 0.012 l, 54.17 W W = 1.016, L = 1.021 W = 40, L = 40
TL132 0.053 l, 6.67 W W = 13.970, L = 4.064 W = 550, L = 160
TL133, TL134 0.030 l, 54.17 W W = 1.016, L = 2.540 W = 40, L = 100
TL135, TL136 0.002 l, 54.17 W W = 1.016, L = 0.127 W = 40, L = 5
TL138 W1 = 1.016, W2 = 1.981 W1 = 40, W2 = 78
table continued on page 9
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Data Sheet 9 of 14 Rev. 07, 2010-11-04
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201 0.054 l, 4.84 W W = 19.685, L = 4.064 W = 775, L = 160
TL202, TL203 0.016 l, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50
TL204 0.078 l, 39.51 W W = 1.651, L = 6.426 W = 65, L = 253
TL205 0.032 l, 16.90 W W = 4.928, L = 2.540 W = 194, L = 100
TL206 0.032 l, 17.05 W W = 4.877, L = 2.540 W = 192, L = 100
TL207 W1 = 17.780, W2 = 0.025, W3 = 17.780 W1 = 700, W2 = 1, W3 = 700,
W4 = 0.025 W4 = 1
TL208, TL211 0.092 l, 25.04 W W = 3.048, L = 7.341 W = 120, L = 289
TL209, TL234 0.010 l, 25.04 W W = 3.048, L = 0.762 W = 120, L = 30
TL210, TL232 0.098 l, 25.04 W W = 3.048, L = 7.823 W = 120, L = 308
TL212, TL229 0.038 l, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 3.048 W1 = 120, W2 = 120, W3 = 120
TL213, TL214, TL230, 0.029 l, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 2.286 W1 = 120, W2 = 120, W3 = 90
TL231
TL215 0.003 l, 4.84 W W = 19.685, L = 0.254 W = 775, L = 10
TL216 (taper) 0.074 l, 5.33 W / 39.51 W W1 = 17.780, W2 = 1.651, L = 5.588 W1 = 700, W2 = 65, L = 220
TL217 (taper) 0.010 l, 4.84 W / 5.33 W W1 = 19.685, W2 = 17.780, L = 0.762 W1 = 775, W2 = 700, L = 30
TL218 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700
TL219 W1 = 1.651, W2 = 2.540 W1 = 65, W2 = 100
TL220 W1 = 1.270, W2 = 2.540 W1 = 50, W2 = 100
TL221, TL222 0.000 l, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1
TL223, TL224 0.000 l, 5.33 W W = 17.780, L = 0.025 W = 700, L = 1
TL225 0.047 l, 47.12 W W = 1.270, L = 3.912 W = 50, L = 154
TL226, TL233 0.023 l, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 1.829 W1 = 120, W2 = 120, W3 = 72
Data Sheet 10 of 14 Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFB212503EF
Find Gerber les for this test xture on the Inneon Web site at http://www.inneon.com/rfpower
Reference circuit assembly diagram (not to scale)
PTFB212503_IN_04 PTFB212503_OUT_04
b212503efl_CD_08-04-2010
RO4350, .020 (60)
RO4350, .020 (60)
+
10 µF
+
10 µF
C201
C207
C209
C205
C202
C211
C210
C204
C206
C208
C203
+
C802
R804
S3
S1
S2
C103
C104
C105
C106
C102
C101
C801
R802
C803
R801
R102
R101
R805
RF_OUTRF_IN
R803
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Data Sheet 11 of 14 Rev. 07, 2010-11-04
Reference Circuit (cont.)
Components Information
Component Description Suggested Manufacturer P/N
Input
C101 Chip capacitor, 7.5 pF ATC ATC100B7R5BW500XB
C102 Chip capacitor, 2.4 pF ATC ATC100B2R4BW500XB
C103, C104 Chip capacitor, 10 pF ATC ATC100A100JW500XB
C105, C106 Chip capacitor, 4.7 µF Digi-Key 493-2372-2-ND
C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT-ND
R101, R102, R803 Resistor, 10 W Digi-Key P10ECT-ND
R801 Resistor, 10 W Digi-Key P10GCT-ND
R802 Resistor, 100 W Digi-Key P101ECT-ND
R804 Resistor, 1200 W Digi-Key P1.2KGCT-ND
R805 Resistor, 1300 W Digi-Key P1.3KGCT-ND
S1 Transistor Digi-Key BCP56
S2 Voltage Regulator Digi-Key LM78L05ACM-ND
S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
Output
C201, C202 Chip capacitor, 1.2 pF ATC ATC100A1R2BW500XB
C203 Chip capacitor, 6.2 pF ATC ATC100B6R2JW500XB
C204, C211 Capacitor, 10 µF Digi-Key 587-1818-2-ND
C205, C210 Capacitor, 10 µF Garrett Electronics 281M5002106K
C206, C207 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND
C208, C209 Chip capacitor, 1 µF Digi-Key 445-1411-2-ND
Data Sheet 12 of 14 Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Package Outline Specications
Package H-33288-6
+.254
–.127
+. 010
–.005
]
L
C
D
G
S
C
L19.558±.510
[.770±.020]
27.940
[1.100]
2X 12.700
[.500]
45° X 2.032
[45° X .080] 4X 1.143
[.045] (4 PLS)
9.398
[.370]
9.779
[.385]
34.036
[1.340]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039
[
.159
2X 22.860
[.900]
[.200] (2 PLS)
C
L
4.889±.510
[.192±.020]
4X R1.524
[R.060]
2X R1.626
[R.064]
V
E
V
F
4X 30°
H -33288 - 6_ po _02 -18 - 2010
2X 5.080
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: G = gate, S = source, D = drain, V = VDD, E, F = N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Data Sheet 13 of 14 Rev. 07, 2010-11-04
L
C
D
G
C
L19.558±.510
[.770±.020]
2X 12.700
[.500]
45° X 2.032
[45° X .080]
2X 1.143
[.045]
9.398
[.370]
9.779
[.385]
23.114
[.910]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039+.254
-.127
[
.159
+.010
-.005
]
22.860
[.900]
2X 5.080
[.200]
4.889±.510
[.192±.020]
V V
S
2X 30°
C 66065-A0003-C743-01-0027 H-34288-4_2 .dwg
L
C
4X R0.508
+.381
-.127
[
R.020+.015
-.005
]
Package Outline Specications (cont.)
Package H-34288-4/2
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: D = drain; S = source; G = gate; V = VDD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Inneon Internet page
http://www.inneon.com/rfpower
Data Sheet 14 of 14 Rev. 07, 2010-11-04
Edition 2010-11-04
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2009 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@inneon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFB212503EL V1/ PTFB212503FL V2
Condential, Limited Internal Distribution
Revision History: 2010-11-04 Data Sheet
Previous Version: 2010-08-05, Data Sheet
Page Subjects (major changes since last revision)
1,2, 12 Changed eared ange package type
1 Updated VSWR specication to 10:1