PNP SILICON PLANAR MEDIUM ISSUE 1- POWER TRANSISTORS MARCH m 94 FEATURES * 40 volt VCEO * Gain of 50 at Ic = 1 Amp * Ptot=l Watt ABSOLUTE MAXIMUM lJ&x&K- RATINGS. PARAMETER -- Voltage Collector-Emitter Voltage Emitter-Basa Vo[tage -- Peak Pulse Current Continuous Collector Current Powar Dissipation -- Operating 2N6726 SYMBOL Collector-Base -- at T,mb= 25C and Storage Temperature `CBO -40 ---- `CEO -30 v -- `CM -2 A $ -1 A 1 w -55 to +200 TI:TW `c 25C unless otherwise stated) -- 2N6726 MIN. -40 v " SYMBOL v -5 ELECTRICAL CHARACTERISTICS (at T.-h. -,,, PARAMETER UNIT -50 v Eeo Ptot Range 2N6727 2N6727 MIN. i MAX. ----- UNIT CONDITIONS. ,. MAX. Collector-Base Breakdown Voltage -- v (BRICaO -40 -50 v 1>-1 mA, IE=O-" Collector-Emitter Breakdown Voltage v (aR)cEo -30 -40 v- le-l Emitter-Basa Breakdown Voltage -- v (f3R)EaO "5 Collector Cut-Off Current -- -- Emitter Cut-Off Current -- Collactor-Emitter Saturation Voltage -.. -- Base-Emitter Turn-On Voltage -- --._ Static Forward Transfar Ratio Current ICBO IE=-l MA, IC=O -0.1 PA VA vc~-40v, vc~-50v, IE=O- IE=O lEao -0.1 -0.1 h VEF-5V, v CE(satl -0.5 -0.5 v 16-1A, la=-l OOmA* -1,2 v IF-lA, VC=-l V* vaE(on) , ~-~ _ h~~ fT Collector Base Capacitance c ce Measured ; --. Transition Frequency . ~v -5 ---- -0.1 OmAr la=O+ under pulsed conditions. :: 50 250 50 500 55 60 50 30 lF-l OmA, Vc~-lV* le-lOOmA, VC=-l V* 250 ~ 50 t 500 ~ 30 MHz `e"'A' V!'-v' lr-50mA, VC=l pF ---- .-- VCH-l OV, f=l MHz I Pulse width= 300Vs. Duty cycle <2Y. 3-8 Ic=o OV