IXTA52P10P IXTP52P10P IXTQ52P10P IXTH52P10P PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) VDSS ID25 RDS(on) TO-220AB (IXTP) D G G D (Tab) DS Test Conditions Maximum Ratings VDSS TJ = 25C to 150C -100 V VDGR TJ = 25C to 150C, RGS = 1M -100 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C - 52 A IDM TC = 25C, Pulse Width Limited by TJM -130 A IA TC = 25C - 52 A EAS TC = 25C 1.5 J dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 300 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 1.13/10 Nm/lb.in. 2.5 3.0 5.5 6.0 g g g g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s Md Mounting Torque Weight TO-263 TO-220 TO-3P TO-247 (TO-3P,TO-220,TO-247) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V -10 A -150 A RDS(on) VGS = -10V, ID = 0.5 * ID25, Note 1 TJ = 125C G z z z z z z z z V 50 m S D (Tab) D = Drain Tab = Drain International Standard Packages Fast Intrinsic Diode Dynamic dv/dt Rated Avalanche Rated Rugged PolarPTM Process Low QG and Rds(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages z V D Features z Easy to Mount Space Savings High Power Density Applications z z z z z (c) 2013 IXYS CORPORATION, All Rights Reserved Tab G = Gate S = Source z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) - 4.0 S TO-247 (IXTH) Symbol TJ TJM Tstg G D S D (Tab) - 100V - 52A 50m TO-3P (IXTQ) G S = = High-Side Switching Push-Pull Amplifiers DC Choppers Current Regulators Automatic Test Equipment DS99912C(01/13) IXTA52P10P IXTQ52P10P IXTP52P10P IXTH52P10P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 12 VDS = -10V, ID = 0.5 * ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz 20 S 2845 pF 1015 pF 275 pF Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 3.3 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 22 ns 29 ns 38 ns 22 ns 60 nC 17 nC 23 nC 0.42 C/W RthJC RthCS (TO-3P)(TO-247) 0.21 C/W (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = - 26A, VGS = 0V, Note 1 trr QRM IRM IF = - 26A, -di/dt = -100A/s VR = - 50V, VGS = 0V Note 120 0.53 - 8.9 - 52 A - 200 A - 3.5 V ns C A 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA52P10P IXTQ52P10P IXTP52P10P IXTH52P10P TO-247 Outline TO-3P Outline Pins: 1 = Gate 2 = Drain 3 = Source 1 - Gate 3 - Source 2,4 - Drain TO-263 Outline TO-220 Outline Pins: 1 - Gate 3 - Source 2 - Drain (c) 2013 IXYS CORPORATION, All Rights Reserved IXTA52P10P IXTQ52P10P IXTP52P10P IXTH52P10P Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C -55 -130 VGS = -10V - 9V -50 VGS = -10V -110 -45 - 9V -90 - 8V -35 ID - Amperes ID - Amperes -40 -30 -25 - 7V -20 -15 - 8V -70 -50 - 7V - 6V -30 - 6V -10 - 5V -5 - 5V -10 0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 0 -10 -15 -20 -25 -30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = - 26A Value vs. Junction Temperature 2.2 -55 VGS = -10V - 9V -50 2.0 -45 VGS = -10V R DS(on) - Normalized 1.8 -40 ID - Amperes -5 VDS - Volts - 8V -35 -30 - 7V -25 -20 - 6V I D = - 52A 1.6 1.4 I D = - 26A 1.2 1.0 -15 0.8 -10 - 5V 0.6 -5 0 0.4 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 26A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 -60 2.4 VGS = -10V -50 2.0 TJ = 125C ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 1.4 -40 -30 -20 1.2 TJ = 25C -10 1.0 0.8 0 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 ID - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA52P10P IXTQ52P10P IXTP52P10P IXTH52P10P Fig. 8. Transconductance Fig. 7. Input Admittance -70 32 -60 28 TJ = - 40C TJ = - 40C 25C 125C 24 25C 20 g f s - Siemens ID - Amperes -50 -40 -30 125C 16 12 -20 8 -10 4 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 0 -10 -20 -30 VGS - Volts -40 -50 -60 -70 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -160 -10 -140 -9 VDS = - 50V -8 I D = - 26A -120 I G = -1mA -100 VGS - Volts IS - Amperes -7 -80 -60 TJ = 125C -6 -5 -4 -3 -40 TJ = 25C -2 -20 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -5.0 5 10 15 20 VSD - Volts 25 30 35 40 45 50 55 60 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 - 1,000 Ciss 100s RDS(on) Limit @ VGS = -15V - 100 Coss 1,000 DC, 100ms - 10 Crss 25s 1ms 10ms ID - Amperes Capacitance - PicoFarads f = 1 MHz TJ = 150C TC = 25C Single Pulse 100 0 -5 -10 -15 -20 -25 VDS - Volts (c) 2013 IXYS CORPORATION, All Rights Reserved -30 -35 -40 -1 - 1 - 10 VDS - Volts - 100 IXTA52P10P IXTQ52P10P IXTP52P10P IXTH52P10P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - C / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 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