BLF888AS - NXP Semiconductors

1. Product profile

1.1 General description

A 600 W LDMOS RF power transistor for broadca st transmitter app lications and industrial

applications. The excellent rug ged ness of th is d evice makes it ideal for dig ital and analog

transmitter applications.

[1] Measured at  = 10 %; tp = 100 s.

[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

Excellent ruggedness (VSWR  40 : 1 through all phases)

Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

High power gain

High efficiency

Designed for broadband operation (470 MHz to 860 MHz)

Internal input matching for high gain and optimum broadband operation

Excellent reliability

Easy power control

Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

1.3 Applications

Communication transmitter applications in the UHF band

Industrial applications in the UHF band

BLF888A; BLF888AS

UHF power LDMOS transistor

Rev. 3 — 30 August 2011 Product data sheet

Table 1. Application information

RF performance at VDS = 50 V unless otherwise specified.

Mode of operation f PL(AV) PL(M) GpDIMD3 IMDshldr PAR

(MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB)

RF performance in a comm on source 860 MHz narrowband test circuit

2-tone, class-AB f1 = 860; f2= 860.1 250 - 21 46 32 - -

pulsed, class-AB [1] 860 - 600 20 58 - - -

DVB-T (8k OFDM) 858 110 - 21 31 - 32 [2] 8.2 [3]

858 125 - 21 32.5 - 30 [2] 8.0 [3]

RF performance in a common source 470 MHz to 860 MHz broadband test circuit

DVB-T (8k OFDM) 858 110 - 20 30 - 32 [2] 8.0 [3]

858 120 - 20 31 - 31 [2] 7.8 [3]

Product data sheet Rev. 3 — 30 August 2011 2 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

BLF888A (SOT539A)

1drain1

2drain2

3gate1

4gate2

5source [1]

BLF888AS (SOT539B)

1drain1

2drain2

3gate1

4gate2

5source [1]

2sym117

Table 3. Ordering information

Type number Package

Name Description Version

BLF888A - flanged balanced LDMOST ceramic package;

2 mounting holes; 4 leads SOT539A

BLF888AS - earless flanged balanced LDMOST ceramic

package; 4 leads SOT539B

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 110 V

VGS gate-source voltage 0.5 +11 V

Tstg storage temperature 65 +150 C

Tjjunction temperature - 200 C

Product data sheet Rev. 3 — 30 August 2011 3 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

5. Thermal characteristics

[1] Rth(j-c) is measured under RF conditions.

6. Characteristics

[1] ID is the drain current.

[2] Capacitance values without internal matching.

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tcase =80C; PL(AV) = 125 W [1] 0.15 K/W

Table 6. DC characteristics

Tj=25



C; per section unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D= 2.4 mA [1] 110 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 240 mA [1] 1.4 1.9 2.4 V

IDSS drain leakage current VGS =0V; V

DS =50V --2.8A

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V -36- A

IGSS gate leakage current VGS =10V; V

DS = 0 V - - 280 nA

RDS(on) drain-source on-state resistance VGS =V

GS(th) +3.75 V;

ID=8.5A [1] -143- m

Ciss input capacitance VGS = 0 V ; VDS =50V;

f=1MHz [2] -220- pF

Coss output capacitance VGS = 0 V; VDS =50V;

f=1MHz -74- pF

Crss reverse transfer capacitance VGS = 0 V ; VDS =50V;

f=1MHz -1.2- pF

Table 7. RF characteristics

RF characteristics in NXP production narrow band test circuit; Tcase =25



C unless otherwise

specified.

Symbol Parameter Conditions Min Typ Max Unit

2-Tone, class-AB

VDS drain-source voltage - 50 - V

IDq quiescent drain current [1] -1.3- A

PL(AV) avera ge output power f1= 860 MHz;

f2=860.1MHz 250 - - W

Gppower gain f1= 860 MHz;

f2=860.1MHz 20 21 - dB

Ddrain efficiency f1= 860 MHz;

f2=860.1MHz 42 46 - %

IMD3 third-order intermodulation distortion f1= 860 MHz;

f2=860.1MHz -32 28 dBc

Product data sheet Rev. 3 — 30 August 2011 4 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

[1] IDq for total device.

[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[3] PAR (of output signal) at 0.01 % probability on CCDF; P AR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

6.1 Ruggedness in class-AB operation

The BLF888A and BLF 888AS are capable of withst anding a load mismatch corresponding

to VSWR  40 : 1 through all phases under the following conditions: VDS =50V;

f = 860 MHz at rated power.

DVB-T (8k OFDM), class-AB

VDS drain-source voltage - 50 - V

IDq quiescent drain current [1] -1.3- A

PL(AV) avera ge output power f = 858 MHz 110 - - W

Gppower gain f = 858 MHz 20 21 - dB

Ddrain efficiency f = 858 MHz 28 31 - %

IMDshldr intermodulation distortion shoulder f = 858 MHz [2] -32 28 dBc

PAR peak-to-average ratio f = 858 MHz [3] -8.2- dB

VGS = 0 V; f = 1 MHz.

Fig 1. Output capacitance as a fun ction of drain-source voltage; typical values per

section

Table 7. RF characteristics …continued

RF characteristics in NXP production narrow band test circuit; Tcase =25



C unless otherwise

specified.

Symbol Parameter Conditions Min Typ Max Unit

001aam579

VDS (V)

0604020

200

100

300

400

Coss

(pF)

Product data sheet Rev. 3 — 30 August 2011 5 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

7. Application information

7.1 Narrowband RF figures

7.1.1 2-Tone

VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit.

Fig 2. 2-Tone power gain and drain efficiency as

function of load power; typical values Fig 3. 2 -Tone power gain and third order

intermodulation distorti on a s load power;

typical values

PL(AV) (W)

0 500400200 300100

001aan761

(dB)

ηD

(%)

ηD

PL(AV) (W)

0 500400200 300100

001aan762

(dB)

IMD3

(dBc)

-40

-20

-60

IMD3

Product data sheet Rev. 3 — 30 August 2011 6 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

7.1.2 DVB-T

7.2 Broadband RF figures

7.2.1 DVB-T

VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit.

Fig 4. DVB-T power gain and inte rmo du la t io n

distortion shoulder as function of load power;

typical valu e s

Fig 5. DVB-T peak-to-average ratio and drain

efficiency as function of load power;

typical values

PL(AV) (W)

0 100 200 300 35025015050

001aam582

(dB)

IMDshldr

(dBc)

−40

−20

−60

−30

−10

−50

IMDshldr

PL(AV) (W)

0 100 200 300 35025015050

001aam583

PAR

(dB)

ηD

(%)

PAR

ηD

PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a

common source broadband test circuit as described in

Section 8.

PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a

common source broadband test circuit as described in

Section 8.

Fig 6. DVB-T power gain and inte rmo du la t io n

distortion shoulder as a function of frequency;

typical valu e s

Fig 7. DVB-T peak-to-average ratio and drain

efficiency as function of frequency;

typical values

f (MHz)

400 900800600 700500

001aam585

(dB) IMDshldr

(dBc)

−30

−40

−20

−10

−50

IMDshldr

f (MHz)

400 900800600 700500

001aam584

7.5

6.5

8.5

9.5

PAR

(dB) ηD

(%)

5.5

ηD

PAR

Product data sheet Rev. 3 — 30 August 2011 7 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

7.3 Impedance information

Fig 8. Definition of transistor imp e da nce

Table 8. Typical push-pull impedance

Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 110 W (DVB-T).

f ZiZL

MHz  

300 0.617  j1.715 4.989 + j1.365

325 0.635  j1.355 4.867 + j1.424

350 0.655  j1.026 4.741 + j1.472

375 0.677  j0.721 4.614 + j1.511

400 0.702  j0.435 4.486 + j1.540

425 0.731  j0.164 4.357 + j1.559

450 0.762 + j0.096 4.228 + j1.570

475 0.798 + j0.347 4.100 + j1.573

500 0.839 + j0.592 4.974 + j1.567

525 0.884 + j0.833 3.850 + j1.554

550 0.936 + j1.072 3.728 + j1.534

575 0.995 + j1.310 3.608 + j1.508

600 1.063 + j1.549 3.492 + j1.475

625 1.141 + j1.791 3.378 + j1.437

650 1.230 + j2.037 3.268 + j1.394

675 1.334 + j2.289 3.161 + j1.347

700 1.456 + j2.548 3.057 + j1.295

725 1.599 + j2.814 2.957 + j1.239

750 1.768 + j3.090 2.860 + j1.180

775 1.971 + j3.376 2.676 + j1.118

800 2.214 + j3.671 2.677 + j1.053

825 2.510 + j3.975 2.591 + j0.985

850 2.873 + j4.282 2.508 + j0.915

875 3.320 + j4.584 2.428 + j0.843

900 3.875 + j4.865 2.351 + j0.770

925 4.562 + j5.095 2.277 + j0.695

950 5.409 + j5.223 2.206 + j0.618

975 6.426 + j5.166 2.138 + j0.540

1000 7.587 + j4.807 2.073 + j0.461

001aan207

gate 1

gate 2

drain 2

drain 1

ZiZL

Product data sheet Rev. 3 — 30 August 2011 8 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

7.4 Reliability

TTF (0.1 % failure fraction).

The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / .

(1) Tj = 100 C

(2) Tj = 110 C

(3) Tj = 120 C

(4) Tj = 130 C

(5) Tj = 140 C

(6) Tj = 150 C

(7) Tj = 160 C

(8) Tj = 170 C

(9) Tj = 180 C

(10) Tj = 190 C

(11) Tj = 200 C

Fig 9. BLF888A; BLF888AS electromigration (IDS(DC), total device)

001aam586

Years

103

102

106

105

104

107

IDS(DC) (A)

0 201684122 1810614

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

(11)

Product data sheet Rev. 3 — 30 August 2011 9 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

8. Test information

[1] American technical ceramics type 800R or capacitor of same quality.

[2] American technical ceramics type 800B or capacitor of same quality.

[3] American technical ceramics type 180R or capacitor of same quality.

[4] American technical ceramics type 100A or capacitor of same quality.

[5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);

thickness copper plating = 35 m.

Table 9. List of componen ts

For test circuit, see Figure 10, Figure 11 and Figure 12.

Component Description Value Remarks

B1, B2 semi rigid coax 25 ; 49.5 mm UT-090C-25 (EZ 90-25)

C1 multilayer ceramic chip capacitor 12 pF [1]

C2, C3, C4, C5,

C6 multilayer ceramic chip capacitor 8.2 pF [1]

C7 multilayer ceramic chip capacitor 6.8 pF [2]

C8 multilayer ceramic chip capacitor 2.7 pF [2]

C9 multilayer ceramic chip capacitor 2.2 pF [2]

C10, C13, C14 multilayer ceramic chip capacitor 100 pF [3]

C11, C12 multilayer ceramic chip capacitor 10 pF [2]

C15, C16 multilayer ceramic chip capacitor 4.7 F, 50 V Kemet C1210X475K5RAC-TU or

capacitor of same quality.

C17, C18, C23,

C24 multilayer ceramic chip capacitor 100 pF [2]

C19, C20 multilayer ceramic chip capacitor 10 F, 50 V TDK C570X7R1H106 KT000N or

capacitor of same quality.

C21, C22 electrolytic capa citor 470 F; 63 V

C30 multilayer ceramic chip capacitor 10 pF [4]

C31 multilayer ceramic chip capacitor 9.1 pF [4]

C32 multilayer ceramic chip capacitor 3.9 pF [4]

C33, C34, C35 multilayer ceramic chip capacitor 100 pF [4]

C36, C37 multilayer ceramic chip capacitor 4.7 F, 50 V TDK C4532X7R1E475MT020 U or

capacitor of same quality.

L1 microstrip - [5] (W  L) 15 mm  13 mm

L2 microstrip - [5] (W  L) 5 mm  26 mm

L3, L32 microstrip - [5] (W  L) 2 mm  49.5 mm

L4 microstrip - [5] (W  L) 1.7 mm 3.5 mm

L5 microstrip - [5] (W  L) 2 mm  9.5 mm

L30 microstrip - [5] (W  L) 5 mm  13 mm

L31 microstrip - [5] (W  L) 2 mm  11 mm

L33 microstrip - [5] (W  L) 2 mm  3mm

R1, R2 wire resistor 10 

R3, R4 SMD resistor 5.6 0805

R5, R6 wire resistor 100 

R7, R8 potentiometer 10 k

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Product data sheet Rev. 3 — 30 August 2011 10 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

See Table 9 for a list of components.

Fig 10. Class-AB common sourc e broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are d rain and gate test voltages

+VG1(test)

+VD1(test)

+VD2(test)

C32

C31 C30

C19

C20

C15

C10 50 Ω

50 Ω L4

C21

C22

C13

C16

C14

C9C7C6C4

C8C5

+VG2(test)

L30 L1

L31

C34

C36

C33

C37

L33

C35

L32

C11

C12

C17

C18

001aan763

C23

C24

Product data sheet Rev. 3 — 30 August 2011 11 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

See Table 9 for a list of components.

Fig 11. Printed-Circuit Board (PCB) for class-AB commo n source amplifier

50 mm

001aam588

105 mm

L33

L32

L31

L30

L31

See Table 9 for a list of components.

Fig 12. Component layo ut for class-AB common source amplifier

6.3 mm

4 mm

+VG2(test) +VD2(test)

+VD1(test)

+VG1(test)

001aan764

C37

C35

C34 C32 C30

C31

C36

C17

C19

C11

C12

C7 C9

C21

C23

C24

C22

C20

C18

C15

C13

C14

C16

C33

50 Ω

C10

50 Ω

49.6 mm

36.8 mm

26.3 mm

25.3 mm

44 mm

Product data sheet Rev. 3 — 30 August 2011 12 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

9. Package outline

Fig 13. Package outline SOT539A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT539A 10-02-02

00-03-03

0 5 10 mm

scale

w1AB

M M M

M M

w2C

UNIT A

11.81

11.56 0.18

0.10 31.55

30.94 13.72 9.53

9.27 17.12

16.10 10.29

10.03

4.7

4.2

ce U2

0.250.25 0.51

35.56

1.75

1.50

41.28

41.02

25.53

25.27

3.30

3.05

2.26

2.01

9.50

9.30

inches 0.465

0.455 0.007

0.004 1.242

1.218

31.52

30.96

1.241

1.219 0.540 0.375

0.365 0.674

0.634 0.405

0.395

0.185

0.165 0.0100.010 0.0201.400

0.069

0.059 1.625

1.615

1.005

0.995 0.130

0.120 0.089

0.079

0.374

0.366

3.48

2.97

0.137

0.117

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A

Note

1. millimeter dimensions are derived from the original inch dimensions.

2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.

Product data sheet Rev. 3 — 30 August 2011 13 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

Fig 14. Package outline SOT539B

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT539B

sot539b_po

10-02-02

11-02-17

Unit(1)

max

nom

min

4.7

4.2

11.81

11.56

31.55

30.94

31.52

30.96

9.5

9.3

9.53

9.27

1.75

1.50

17.12

16.10

3.48

2.97

10.29

10.03

0.25

Dimensions

Earless flanged balanced LDMOST ceramic package; 4 leads SOT539B

0.18

0.10

1EE

13.72

FHH

25.53

25.27

2.26

2.01

32.77

32.13

U2w2

0.25

max

nom

min

0.185

0.165

0.465

0.455

1.242

1.218

1.241

1.219

0.374

0.366

0.375

0.365

0.069

0.059

0.674

0.634

0.137

0.117

0.405

0.395

0.01

0.007

0.004

0.54

1.005

0.995

0.089

0.079

1.275

1.265

0.01

0 5 10 mm

scale

Dw2

1 2

3 4

Note

1. millimeter dimensions are derived from the original inch dimensions.

Product data sheet Rev. 3 — 30 August 2011 14 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

10. Handling information

11. Abbreviations

12. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10. Abbreviations

Acronym Description

CCDF Complementary Cumulative Distribution Function

DVB Digital Video Broadcast

DVB-T Digital Video Broadcast - Terrestrial

LDMOS Laterally Diffused Metal-Oxide Semiconductor

LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor

OFDM Orthogonal Frequency Division Multiplexing

PAR Peak-to-Average power Ratio

RF Radio Frequency

SMD Surface Mounted Device

UHF Ultra High Frequency

VSWR Voltage Standing-Wave Ratio

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF888A_BLF888AS v.3 20110830 Product data sheet - BLF888A_BLF888AS v.2

Modifications: •The status of this document has been changed to Product data sheet.

•Table 7 on page 3: The values in the Conditions column for VDS and IDq have been

removed.

BLF888A_BLF888AS v.2 20110301 Preliminary data sheet - BLF888A_BLF888AS v.1

BLF888A_BLF888AS v.1 20100921 Objective data sheet - -

Product data sheet Rev. 3 — 30 August 2011 15 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the shor t data sheet, the

full data sheet shall pre vail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors doe s not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

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Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

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Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

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damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or cu stomer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by custo m er’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semicon ductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminar y specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 30 August 2011 16 of 17

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automo tive use. It is neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applicat ions, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damage s or failed product claims resulting from customer design and

use of the product for automotive appl ications beyond NXP Semiconductors’

standard warrant y and NXP Semiconductors’ product specifications.

13.4 Licenses

13.5 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

ICs with DVB-T or DVB-T2 functionality

Use of this product in any manner that complies with the DVB-T or the

DVB-T2 standard may require licenses under applicable patents of the

DVB-T respectively the DVB-T2 p atent portfolio, which license is available

from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under

applicable pate nts of other parties.

NXP Semiconductors BLF888A; BLF888AS

UHF power LDMOS transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 30 August 2011

Document identifier: BLF888A_BLF888AS

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6.1 Ruggedness in class-AB operation . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 5

7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5

7.1.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7.1.2 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.2 Broadband RF figures . . . . . . . . . . . . . . . . . . . 6

7.2.1 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

7.3 Impedance information. . . . . . . . . . . . . . . . . . . 7

7.4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

8 Te st information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Handling information. . . . . . . . . . . . . . . . . . . . 14

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.4 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13.5 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

14 Contact information. . . . . . . . . . . . . . . . . . . . . 16

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17