MJE710 (stscon) MJE711 MJE712 PNP SILICON MEDIUM-POWER TRANSISTORS . .. designed for use in low power amplifiers, as drivers in high-power amplifier and medium-speed switching circuits. DC Current Gain hee = 40 (Min) @ Ic = 180 mAde = 20 (Min) @ Io = 500. mAdc @ Collector-Emitter Sustaining Vottage VCEQ (sus) = 40, 60, 80 Vde (Min) @ Ic = 50 mAdc @ Complement to NPN Types MJE720, MJE721, MJE722 Series @ Equivalent to the Specifications of the Pro-Electron 6D166, BD168 and BD170 Transistors 1.5 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 20 WATTS MAXIMUM RATINGS Rating Symbol | MJE 710 | MJE 741) MJE 712 Unit Collector-Emitter Voltage VcEO 40 60 80 Vde Collector-Base Voltage Vos 40 60 80 Vode Emitter-Base Voltage Ves |~-5.0-___- Vde Coltector Current Continuous le 1S Adc Base Current cis 06 Adc Total Device Dissipation @Ta=25C] Pp j-- 1.25 ~~ | Watt Derate above 25C 0,008 = ] wht Total Device Dissipation @Te=26C| Pp 20 Warts Derate above 26C 0.16 wc Operating and Storage Junction TJ. Tyg |[-> -65 to +150 Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol! Max Unit Thermal Resistance, Junction to Case 8JC 8.25 oc | Thermal Resistance, Junction to Ambien osm 100 ecw FIGURE 1 - ACTIVE-REGION SAFE OPERATING AREA 10 as ic, COLLECTOR CURRENT (AMP) 5 ss 7 6 2) OM a rT | Veg, COLLECTOR-EMITTER VOLTAGE (VOLTS) See Note 1 wn o J wel { { STYLE? =a PIN 1. EMITTER | 2. COLLECTOR waka 3, BASE CASE 77-03 516MJE710, MJE711, MJE712 (continued) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) [ | Svmbot [Min [Max [Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage VcEO (sus) Vde (ig-= 50 mAdc, Ig = 0} MJE710 40 - MJE711 60 - MJE712 80 ~ Cailector Cutoff Current IcEO pwAdc (VcE = 20 Vde, tg = 0) MJE710 - 500 (Veg = 30 Vde, Ig = 0) MJE711 ~ 500 (VcE = 40 Vdc, Ig = 0) MJE712 _ 500 Collector Cutoff Current Icex wAde (VceE = 40 Vide, Vag (oft) = 1.5 Vie) MJE710 - 100 (VcE = 60 Vde, Vee (oft) = 1.5 Vde) MJE7I4 - 100 (Vce = 80 Vie, Vee (off) = 1.5 Vde) MJE712 - 100 (VcE = 40 Vie, VgE (ote) = 1.5 Vie. MJE710 - 500 To = 125C) (Voge * 60 Vdc, Vege (ort) * 1.5 Vide, MJE711 - 00 To = 125C) (Voge = 80 Vide, Veeioff) * 1.5 Vdc, MJE712 - 500 To = 126C) Emitter Cutoff Current lego - 1.0 mAdc (Vpg = 5.0 Vdc, i = 0) ON CHARACTERISTICS DC Current Gain hee (Ig = 150 mAde, Voge = 1.0 Vde) 40 - (Ig = 500 mAde, Vcg * 1.0 Vde) 20 - (Ic = 1.0 Adc, Veg = 1.0 Ve) 8.0 ~ Coltector-Emitter Saturation Voltage VCE (sat) Vde (tg = 150 mAdec, Ig = 15 mAdc) - 0.15 (I = 500 mAdc, Ig = 50 mAdc) - 0.4 {Ic = 1.5 Ade, Ig = 300 mAde - 1.0 Sase-Emitter Saturation Voltage VBE (sat) Vde lig = 1.5 Ade, Ig = 300 mAdc) = 13 Base-Emitter On Voltage VBE(on) - 0.95 Vde (Ig = 500 mAde, Voge = 1.0 Vde) FIGURE 2 DC CURRENT GAIN hee, DC CURRENT GAIN 500 ic, COLLECTOR CURRENT (mA) Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate Ic - VcE limits of the transistor that must ba observed for reliable oparation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 1000 2000 517 FIGURE 3 ON VOLTAGES VBE (sat) @ Vee = 1.0 Vde 2 an V, VOLTAGE (VOLTS) S ny Ic/ig = VCE (sat) 30 100 200 500 ic, COLLECTOR CURRENT (mA) 20 1000 The data of Figure 1 is based on Tyipk) = 150C; T is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided Tyipk) <150C. At high case temperatures, thermal timitations will reduce the power that can be handled to vatues less than the limitations imposed by second breakdown. (See AN-415)