DS30189 Rev. A-5 1 of 1 BAS85
Features
BAS85
SILICON SCHOTTKY BARRIER DIODE
·For general applications
·Low turn-on voltage
·PN junction guard ring
Characteristic Symbol Value Unit
Continuous reverse voltage VR30 V
Forward continuous current* IF200 mA
Peak forward current* IFM 300 mA
Surge forward current* @ tp = 1s IFSM 600 mA
Power dissipation* @ TA= 65°CPtot 200 mW
Junction temperature Tj125 °C
Operating temperature range TA-65 to +125 °C
Storage temperature range TSTG -65 to +150 °C
Maximum Ratings @ TA= 25°C unless otherwise specified
* Valid provided that electrodes are kept at ambient temperature.
Characteristic Symbol Min Typ Max Unit
Reverse breakdown voltage
10 mA pulses
V(BR)R 30 — — V
Electrical Characteristics @ Tj= 25°C unless otherwise specified
Features
·Glass case
·Weight: 0.05g (approx)
Mechanical Data
C
A
B
Min Max
A3.4 3.6
B1.40 1.50
C0.20 0.40
All Dimensions in mm