Philips Sersiconductors Low-voltage stabistor FEATURES e Low-voltage stabilization Forward voltage range: 580 to 960 mV Total power dissipation: max. 250 mW. APPLICATIONS e Low-voltage stabilization e.g. - Bias stabilizer in class-B output stages ~ Clipping ~ Clamping Meter protection. DESCRIPTION Low-voltage stabilization diode in a small plastic SOT23 package. DESCRIPTION 2 not connected 3 cathode pnd Marking code: A91. Fig.1 Simplified outline (SOT23), pin configuration and symbol. MAMI8S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS | MIN. MAX. UNIT Vr continuous reverse voltage - 5 Vv le continuous forward current - 200 mA Prot total power dissipation Tamb = 25 C - 250 | mW Tatg storage temperature ~65 +150 C Tj junction temperature - 150 C 1996 Mar 20 8-10Philips Semiconductors Product specification Low-voltage stabistor BAS17 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Ve forward voltage see Fig.2 Ip = 0.1 mA 580 - 660 |mvV lp =1mMA 665 - 745 mV lp =5MA 725 - 805 |mvV lr =10mA 750 - 830 | mV Ip = 100 mA 870 - 960 |mvV Irn reverse current VR=4V - - 5 |paA Tait differential resistance Ip =0.5 mA - 120 - 12 le=2mA - 80 - |2 Sr temperature coefficient p= 1mA - -18 - {mv/K Cg diode capacitance Va =OV; f=1 MHz - - 140 |pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin jp thermal resistance from junction to tie-point 330 KAW Pith pa thermal! resistance from junction to ambient | note 1 500 KAW Note 1. Device mounted on a FR4 printed-circuit board. 1996 Mar 20Phitips Semiconductors Product specification Low-voltage stabistor BAS17 GRAPHICAL DATA MBG517 0.5 0.75 Vg (VY) 1.0 T= 25C. (1) Minimum values. (2) Maximum values. Fig.2 Forward current as a function of forward voltage. 1996 Mar 20 8-12