MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 1 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222ALP4
40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Low Collector-Emitter Saturation Voltage, VCE(sat)
• Ultra-Small Leadless Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0009 grams (Approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT2222ALP4-7B 2S 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes In corpor ated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
Device Schematic
C
E
B
Device Symbol
C
E
B
Bottom View
X2-DFN1006-3
2S = Product Type Marking Code
Bar Denotes Base and Emitter Side
Top View
e4
2S
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 2 of 7
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© Diodes Incorporated
MMBT2222ALP4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current - Continuous IC 600 mA
Peak Collector Current ICM 800 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 460 mW
Power Dissipation (Note 6) PD 1 W
Thermal Resistance, Junction to Ambient (Note 5) R
θ
JA 272 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R
θ
JA 120 °C/W
Thermal Resistance, Junction to Lead (Note 7) R
θ
JL 110 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings (Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper.
7. Thermal resistance from junctio n to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 3 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222ALP4
Thermal Characteristics
0.000001 0.0001 0.01 1 100 10,000
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
t1, PULSE DURAT ION TIME (sec)
Fig ur e 1 Tran sien t Thermal Resis t ance
R (t) = r(t) * R
R = 272°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
1,000
1E-06 0.0001 0.01 1 100 10,000
100
10
1
0.1
t1, PULSE DURATION TIME (sec)
Figure 2 Single Pulse Maximum Power Dissipation
P
,
P
EAK
T
R
ANSIEN
T
P
O
IWE
R
(W)
(PK)
Single Pulse
R = 272C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
JA JA(t)
°
0 50 100 150 200
0
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(W)
D
0.1
0.2
0.3
0.4
0.5
T , AMBIENT TEMPERA TURE (°C)
Fig ur e 3 Po w er D issipat io n vs. Ambient Temperature
A
R = 272 C/W
θ
JA
°
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 4 of 7
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© Diodes Incorporated
MMBT2222ALP4
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 75 ⎯ ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 6) BVCEO 40 ⎯ ⎯ V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 ⎯ ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICEX ⎯ 10 nA
VCE = 60V, VEB
(
off
)
= 3V
Collector Cutoff Current ICBO ⎯ ⎯ 10 nA
VCB = 60V, IE = 0
⎯ ⎯ 10 μA VCB = 60V, IE = 0, TA = +125°C
Emitter Cutoff Current IEBO ⎯ ⎯ 10 nA
VEB = 5V, IC = 0
Base Cutoff Current IBL ⎯ ⎯ 20 nA
VCE = 60V, VEB
(
off
)
= 3V
ON CHARACTERISTICS (Note 6)
DC Current Gain hFE
35 ⎯ ⎯ ⎯ V
CE = 10V, IC = 0.1mA
50 ⎯ ⎯ ⎯ VCE = 10V, IC = 1mA
75 ⎯ ⎯ ⎯ VCE = 10V, IC = 10mA
35 ⎯ ⎯ ⎯ VCE = 10V, IC = 10mA, TA = -55°C
100 ⎯ 300 ⎯ VCE = 10V, IC = 150mA
50 ⎯ ⎯ ⎯ VCE = 1V, IC = 150mA
40 ⎯ ⎯ ⎯ VCE = 10V, IC = 500mA
Collector-Emitter Saturation Voltage VCE(sat) ⎯
⎯ ⎯
⎯
0.3
1.0 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(sat) 0.6 ⎯ 1.2 V IC = 150mA, IB = 15mA
⎯ ⎯ 2.0 IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS (Note 6)
Output Capacitance Cobo ⎯ ⎯ 8 pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo
25 pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT 300 ⎯ ⎯ MHz VCE = 20V, IC = 20mA, f = 100MHz
Noise Figure NF ⎯ ⎯ 4.0 dB
VCE = 10V, IC = 100µA, RS = 1.0kΩ,
f = 1.0kHz
Input Impedance hie 0.25 ⎯1.25 kΩ
IC = 10mA, VCE = 10V, f = 1.0kHz
Voltage Feedback Ratio hre ⎯ ⎯4.0 X 10−4
Small-Signal Current Gain hfe 75 ⎯375 ⎯
Output Admittance hoe 25 ⎯200 µS
SWICHING CHARACTERISTICS (Note 6)
Delay Time td ⎯ ⎯ 10
nS
VCC = 30V, VBE(off) = -0.5V,
IC = 150mA, IB1 = 15mA Rise Time t
r
⎯ ⎯ 25
Storage Time ts ⎯ ⎯ 225 VCC = 30V, IC = 150mA,
IB1 = IB2=15mA Fall Time tf⎯ ⎯ 60
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 5 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222ALP4
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Figure 4 T ypical DC Current Gain vs.
Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
110 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10.1 10 100
V , BASE - EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Figure 6 Typical Base-Emitter T urn-On Voltage
vs. C ollec tor Cu r r ent
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
Fi gur e 7 Ty p i c al
R
Ca paci t a nce C ha r act er ist ics
Cibo
Cobo
f = 1MHz
1
10
100
1,000
110100
I , COLLECTOR CURRENT (mA)
Figure 8 Typical Gain-Bandwidth Product vs. Collector Current
C
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
0.001 0.01 1 10
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Figure 9 T ypical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 6 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222ALP4
Package Outline Dimensions
Suggested Pad Layout
X2-DFN1006-3
Dim Min Max Typ
A ⎯0.40 ⎯
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
Y
C
G1
G2
X
X
1
Z
L2
A1
Eb2
L1L3
D
e
b1
A
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 7 of 7
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© Diodes Incorporated
MMBT2222ALP4
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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